• Title/Summary/Keyword: Single switch

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A Development of on Electronic Starter for Single Phase Induction Motor (단상 유도전동기의 전자식 기동장치 개발)

  • Jeong, Hyeung-Woo;Kim, Dong-Hee;Baik, Won-Sik;Kim, Min-Huei;Song, Hyun-Jig
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.5
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    • pp.73-79
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    • 2008
  • This paper presents a simple electronic starter for single phase induction motor (SPIM). It replaces the centrifugal switch in the auxiliary winding circuit of the capacitor start type SPIM. The electronic starter observes the auxiliary winding voltage, and disconnects the auxiliary winding when the motor gets close to its rated speed. Because of its possibly fluttering contacts of the centrifugal switch which mounted on the conventional SPIM, the reliability of SPIM can be reduced. Developed new electronic starter has no mechanical contacts. Therefore, the reliability and the performance of SPIM can be improved. The operational principle of the proposed electronic starter is explained, and illustrated with experimental results.

Single Buffer types of ATM Switches based on Circulated Priority Algorithm (순환적 순위 알고리즘을 이용한 단일형 버퍼형태의 ATM스위치)

  • Park Byoung-soo;Cho Tae-kyung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.5
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    • pp.429-432
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    • 2004
  • In this paper, we propose a new sorting algorithm for ATM switch with a shared buffer which has a sequencer architecture with single queue. The proposed switch performs a sorting procedure of ATM cell based on the output port number of ATM cell with hardware implementation. The proposed architecture has a single buffer physically but logically it has function of multi-queue which is designed at most to control the conflicts in output port. In the future, this architecture will take various applications for routing switch and has flexibility for the extension of system structure. therefore, this structure is expected on good structure in effective transmission.

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A Study on a SPDT Switch with High Isolation Using Radial Resonators (방사형 공진기를 이용한 고격리도 SPDT 스위치 연구)

  • Yu Ri SO;Yunjian GUO;Jae Gook LEE;Min Jae LEE;Jong Chul Lee
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.22 no.6
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    • pp.223-229
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    • 2023
  • This papart proposes single pole double throw (SPDT) switch with six-stage radial stub resonators in the 3.6~4.0 GHz band. The switch was simulated using ADS (Advanced Design Software), a design tool for the wireless communication circuits, and evaluated on a pcb substrate. The measurement results of the radial SPDT switch showed an average 90 dB isolation, and 1.5 dB insertion loss. This isolation characteristic was 20 dB superior to higher than those laboratory or commercial products reported thus far. The proposed SPDT switch is applicable to multi-band RF front-end systems, such as WiMAX, LTE/5G, Wi-Fi, and HyperLAN.

The Driving Part Performance Improvement for Single-Phase MJ8l Switch Point Machine Localization (단상 MJ81 전기선로전환기 국산화를 위한 구동부 성능 개선)

  • Baek, Jong-Hyen;Lee, Chang-Goo;Seul, Nam-O
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.3
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    • pp.535-541
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    • 2009
  • In this paper, we present the improvement on the performance of driving part for single-phase MJ81 switch point machine which has been developed for localization. The single-phase motor's specification and reliability for speed and safety improvement of conventional line was investigated in "Development project for Speed-up on Conventional Line" We systemized the test procedure fur single-phase motor by investigating the feasibility for localization and the specification of function and performance. Also, we developed appropriate technology and proved the durability of the single-phase driving motor by executing synthesis test over 200,000 times.

3:1 Bandwidth Switch Module by Using GaAs PH Diode (GaAs PIN Diode를 이용한 3:1 대역폭 스위치 모듈)

  • 정명득;이경학;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.5
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    • pp.451-458
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    • 2002
  • Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

A Fault Diagnosis Method in Cascaded H-bridge Multilevel Inverter Using Output Current Analysis

  • Lee, June-Hee;Lee, June-Seok;Lee, Kyo-Beum
    • Journal of Electrical Engineering and Technology
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    • v.12 no.6
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    • pp.2278-2288
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    • 2017
  • Multilevel converter topologies are widely used in many applications. The cascaded H-bridge multilevel inverter (CHBMI), which is one of many multilevel converter topologies, has been introduced as a useful topology in high and medium power. However, it has a drawback to require a lot of switches. Therefore, the reliability of CHBMI is important factor for analyzing the performance. This paper presents a simple switch fault diagnosis method for single-phase CHBMI. There are two types of switch faults: open-fault and short-fault. In the open-fault, the body diode of faulty switch provides a freewheeling current path. However, when the short-fault occurs, the distortion of output current is different from that of the open-fault because it has an unavailable freewheeling current flow path due to a disconnection of fuse. The fault diagnosis method is based on the zero current time analysis according to zero-voltage switching states. Using the proposed method, it is possible to detect the location of faulty switch accurately. The PSIM simulation and experimental results show the effectiveness of proposed switch fault diagnosis method.

Bit Error Rate measurement of an RSFQ switch by using an automatic error counter (자동 Error counter를 이용한 RSFQ switch 소자의 Bit Error Rate 측정)

  • Kim Se Hoon;Kim Jin Young;Baek Seung Hun;Jung Ku Rak;Hahn Taek Sang;Kang Joon Hee
    • Progress in Superconductivity and Cryogenics
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    • v.7 no.1
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    • pp.21-24
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    • 2005
  • The problem of fluctuation-induced digital errors in a rapid single flux quantum (RSFQ) circuit has been very important issue. So in this experiment, we calculated error rate of RSFQ switch in superconductiyity ALU, The RSFQ switch should have a very low error rate in the optimal bias. We prepared two circuits Placed in parallel. One was a 10 Josephson transmission lines (JTLs) connected in series, and the other was the same circuit but with an RSFQ switch placed in the middle of the 10 JTLs. We used a splitter to feed the same input signal to the both circuits. The outputs of the two circuits were compared with an RSFQ XOR to measure the error rate of the RSFQ switch. By using a computerized bit error rate test setup, we measured the bit error rate of 2.18$\times$$10^{12}$ when the bias to the RSFQ switch was 0.398mh that was quite off from the optimum bias of 0.6mA.

Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System

  • Hou, Zhe;Li, Hongjie;Li, Jing;Ji, Shengchang;Huang, Chenxi
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.786-797
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    • 2016
  • This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

Molecular Conductance Switching Processes through Single Ruthenium Complex Molecules in Self-Assembled Monolayers

  • Seo, So-Hyeon;Lee, Jeong-Hyeon;Bang, Gyeong-Suk;Lee, Hyo-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.27-27
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    • 2011
  • For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

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A New Switching Method for Reducing switch loss of Single-phase three-level NPC inverter (스위치 손실 감소를 위한 단상 3레벨 NPC 인버터의 새로운 스위칭 방법)

  • Lee, Seung-Joo;Lee, June-Seok;Lee, Kyo-Beum
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.2
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    • pp.268-275
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    • 2015
  • This paper proposes a method of switching to improve power loss for the single-phase three-level NPC inverter. The conventional switching methods, which are called as the bipolar and unipolar switching methods, are used for single phase inverters using three-level topology. However, these switching method have disadvantage in the power loss. Because all of the switch are operated. To reduce the power loss of the three-level NPC inverter, clamp switching method is introduced in this paper. This way, one of the lag is fixed that switching loss is reduced. This paper analyzes and compares power losses of unipolar method and clamp method. The validity of the power loss analysis is verified through the simulation and experimental results.