• Bulletin of the Korean Chemical Society
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• 제18권6호
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• pp.612-618
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• 1997

$LiMn_2O_4$ powders were prepared by burning and subsequent calcination of PEG-metal nitrate precursor. After the burning stage of the precursor, some minor phases such as $Mn_2O_3$ (or $Mn_3O_4$), MnO, and carbonate were formed and single phases of $LiMn_2O_4$ were obtained by further calcinations above 400 ℃. From thermal analysis of the precursor, a violent thermal decomposition, which was indicated by a drastic weight loss accompanied by a sharp and strong exothermic peak, was observed and probably caused by an oxidation-reduction reaction between oxidizer and fuel. The formation of the minor phases could be explained in terms of the burning behavior of the precursor by employing valence concepts of propellant chemistry. The calcined powders were composed of submicron-sized but highly agglomerated particles and showed very broad particle size distribution.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.85.2-85.2
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• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3383-3386
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• 2012

SnS thin films were deposited on glasses through metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions, using bis(3-mercapto-1-propanethiolato) tin(II) precursor without toxic $H_2S$ gas. The MOCVD process was carried out in the temperature range of $300-400^{\circ}C$ and the average grain size in fabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is in optimal range for harvesting solar radiation energy. The precursor and SnS films were characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.92-96
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• 2009

A new precursor [$Zr(acac)_{3}(H_{2}O)_{2}$] was synthesized by Sonochemical technique and used to deposit thin $ZrO_{2}$ film on quartz and ceramic substrate via ultrasonic aerosol assisted chemical vapour deposition (UAACVD) at 300 ${^{\circ}C}$ in oxygen environment followed by annealing of the sample for 2-3 minutes at 500 ${^{\circ}C}$ in nitrogen ambient. The molecular structure of the precursor determined by single crystal X-ray analysis revealed that the molecules are linked through intermolecular hydrogen bonds forming pseudo six and eight membered rings. DSC and TGA/FTIR techniques were used to determine thermal behavior and decomposition temperature of the precursor and nature of evolved gas products. The optical measurement of annealed $ZrO_{2}$ film with tetragonal phase shows optical energy band gap of 5.01 eV. The particle size, morphology, surface structure and composition of deposited films were investigated by XRD, SEM and EDX.

• Bulletin of the Korean Chemical Society
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• 제24권7호
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• 한국수소및신에너지학회논문집
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• 제35권3호
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• pp.336-344
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• 2024

In this study, a Ni_0.9Co_0.05Mn_0.05(OH)₂ precursor used as an anode active material using a black powder leaching solution of a recycled lithium ion battery was prepared through coprecipitation synthesis with co-precipitation time, NH₄OH concentration, pH, and stirring time as variables. The characteristics of the prepared powder were analyzed by X-ray diffraction (XRD), scanning electron microscope (SEM), particle size analysis (PSA), and inductively coupled plasma optical emission spectroscopy (ICP-OES). It was confirmed that the single crystal thickness of the LiNi_1-x-yCo_xMn_yO₂ (NCM) precursor changes depending on the NH₄OH concentration and reaction pH value, and thicker single crystals are formed at 2 M NH₄OH compared to 1 M and at pH 10.8-11.8 compared to pH 11.8-12.0. NCM precursor particles increased with coprecipitation time, and it was confirmed that the 72 hours NCM precursor had the largest particle size. Through ICP-OES analysis, it was confirmed that the NCM precursor was synthesized with the target composition of Ni²⁺:Co²⁺:Mn²⁺=90:5:5.

• 한국초전도ㆍ저온공학회논문지
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• 제9권1호
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• pp.14-17
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• 2007

The slot-die coating & calcination process was adopted to fabricate the long YBCO precursor films on the buffered metal tape for the $2^{nd}$ generation coated conductors. To obtain the smooth and crack-free surface of long YBCO precursor films, the parameters of slot-die coating and the process variables of calcination step must be optimized simultaneously in reel-to-reel method. Among the parameter of slot-die coating process, the viscosities of the precursor solution was controlled from 60cP to 200cP to obtain the thicker films from on single coating. The slot-die gap, the injection rate of precursor solution, the moving speed of buffered metal tape etc. are controlled lot the full coverage and smooth surface of YBCO precursor films. The slot-die coated films are moved through the tube furnace with predetermined heating profiles in humid oxygen ambient The YBCO precursor films was identifed with $Y_2O_3,\;BaF_2$, and CuO phase by XRD and consisted of fine grains of about 20nm size observed by FE-SEM. The YBCO films show the critical current density over $MA/cm^2$ using the precursor films formed by the continuous slot-die coating & calcination process.

• 센서학회지
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• 제22권3호
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• 한국분말재료학회지
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• 제17권3호
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• pp.209-215
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• 2010

Mesoporous alumina particles were prepared by spray pyrolysis using cetyltrimethyl-ammonium bromide (CTAB) as a structure directing agent and the effect of Al precursor types on the texture properties was studied using $N_2$ adsorption isotherms, small-angle X-ray scattering (SAXS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The surface area and the microstructure of alumina particles were significantly influenced by the Al precursor type. The largest BET surface area was obtained when Al chloride was used, whereas alumina particles prepared from Al acetate had the largest pore volume. According to small-angle X-ray scattering (SAXS) analysis, the alumina powders prepared using nitrate and acetate precursors had a clear single SAXS peak around $2{\theta}=1.0{\sim}1.5^{\circ}$, indicating that regular mesopores with sponge-like structure were produced. On the basis of TEM, SAXS, and $N_2$ isotherm results, the chloride precursor was most profitable to obtain the largest surface area ($265\;m^2/g$), whereas, the nitrate precursor is useful for the preparation of non-hollow mesoporous alumina with regular pore size, maintaining high surface area (${\sim}233\;m^2/g$).