• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.258-262
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• 2013

Poly(2,3-naphthalenevinylene-alt-N-ethylhexyl-3,6-carbazolevinylene), 2,3-PNCPV, poly(2,6-naphthalene vinylenealt- N-ethylhexyl-3,6-carbazolevinylene), 2,6-PNCPV, and poly(1,4-naphthalenevinylene-alt-N-ethylhexyl-3,6- carbazolevinylene), 1,4-PNCPV were synthesized through the Wittig polycondensation reaction. The conjugation lengths of the polymers were controlled by differently linked naphthalenes in the polymer main chain. The resulting polymers were completely soluble in common organic solvents, and exhibited good thermal stability at up to $400^{\circ}C$. The synthesized polymers showed UV-visible absorbance and photoluminescence (PL) in the ranges of 357-374 nm and 487-538 nm, respectively. The carbazole and 2,3-linked naphthalene containing 2,3-PNCPV showed a blue PL peak at 487 nm. A single-layer light-emitting diode was fabricated with an ITO/polymer/Al configuration. The electroluminescence (EL) emission of 2,3-PNCPV was shown at 483 nm.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.179-182
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• 2007

Polycrystaline (poly) 3C-SiC thin film on n-type and p-type Si were deposited by APCVD using HMDS, $H_2$, and Ar gas at $1180^{\circ}C$ for 3 hour. And then the schottky diode with Au/poly 3C-Sic/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) value were measured as 0.84 V, over 140 V, 61nm, and $2.7{\times}10^{19}\;cm^3$, respectively. The p-n junction diode fabricated by poly 3C-SiC was obtained like characteristics of single 3C-SiC p-n junction diode. Therefore, its poly 3C-SiC thin films are suitable MEMS applications in conjuction with Si fabrication technology.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.235-238
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• 2009

This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with $N_2$ in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: $Si_2(CH_3)_6)$ at $1200^{\circ}C$. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various $N_2$ flow rate. In the case of 0 sccm $N_2$ flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of $N_2$ flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• Elastomers and Composites
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• 제41권2호
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• pp.116-124
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• 2006

Poly(ethylene-co-15.3 mole% octene) ($PEO_{15}$) - 1-옥텐 2성분계 혼합물과 $PEO_{15}$와 (에틸렌 + 1-옥텐) 혼합용매로 이루어진 3성분계 혼합물의 상거동을 $160^{\circ}C$와 1,000 bar의 영역까지 측정하였다. $PEO_{15}$ - 에틸렌 - 1-옥텐 혼합물에서 에틸렌의 함량이 증가함에 따라 cloud-point 곡선이 측정되는 압력이 급격하게 높아졌다. 에틸렌 함량이 18 wt% 보다 낮을 경우, $PEO_{15}$ -에틸렌 - 1-옥텐 혼합물에서 bubble-point 곡선과 cloud-point 곡선이 모두 관측되었다. 에틸렌 함량이 증가함에 따라 $PEO_{15}$ - 에틸렌 - 1-옥텐 혼합물에서 bubble-point 곡선이 관측되는 온도범위는 좁아졌으며, $PEO_{15}$ - 에틸렌 - 1-옥텐 혼합물이 단일상으로 존재하는 온도-압력 영역이 현저히 감소하였다. 에틸렌 함량에 따라 단일상 영역이 감소하는 것은 $PEO_{15}$와 (에틸렌 + 1-옥텐) 혼합용매 사이에 작용하는 분산인력이 줄어들기 때문이다. 에틸렌을 36 wt% 보다 적게 함유한 $PEO_{15}$ - 에틸렌 - 1-옥텐 혼합물의 단일상 영역은 온도가 높아짐에 따라 감소하였다. 이와는 대조적으로 에틸렌을 50 wt% 보다 많게 함유한 $PEO_{15}$ - 에틸렌 - 1-옥텐 혼합물의 단일상 영역은 온도가 녹아짐에 따라 증가하였다. $PEO_{15}$ 용해도를 낮추는 혼합용매 사이의 극성인력과 $PEO_{15}$ 용해도를 높이는 혼합용매의 밀도는 온도가 낮아짐에 따라 증가한다. 에틸렌 함량이 50 wt% 보다 많을 경우, 혼합용매들의 극성인력 효과가 밀도 효과보다 커서 온도가 낮아짐에 따라 cloud-point 압력은 증가하였다. 에틸렌 함량이 50 wt% 보다 적을 경우, 혼합용매들의 극성인력 효과가 밀도 효과보다 작아서 온도가 낮아짐에 따라 cloud-point 압력은 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• 센서학회지
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• 제16권4호
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• 한국염색가공학회지
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• 제6권4호
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• pp.17-26
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• 1994

Poly(ethylene terephthalate)(PET) filaments were treated in binary mixtures of organic solvents such as benzyl alcohol/perchloroethylene(BA/PER), benzyl alcohol/trichloroethylene(BA/TRI), benzyl alcohol/ethylene chloride(BA/EC), methanol/perchloroethylene (ME/PER), and methanol/trichloroethylene(ME/TRI). From the equilibrium swelling of PET, total and partial isotherms of PET for sorption of solvent mixtures and isotherms for distribution of the components between the phases were taken. Also the shrinkage and the crystallinity of PET treated with binary mixtures were investigated. The results obtained were summerized as follows: 1. All isotherms for distribution of the components between the phase deviated from the diagonal in system of PET-binary mixtures. Especially in the binary mixtures of ME/PER or ME/TRI, selectivo sorption of chlorinated hydrocarbon PER and TRI by PET occured. 2. The shrinkage of PET treated in binary mixrures was increased to compare with single solvent-treated, but the composition of binary mixtures corresponding to maximum values of shrinkage was not always agreed with the composition of binary mixtures corresponding to maximum values of shrinkage was not always agreed with the composition of binary mixtures exhibiting of the maximum swelling of PET. 3. The crystallinity of PET treated in binary mixtures generally increased than that of single solvent-treated.

• 폴리머
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• 제27권5호
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• pp.405-412
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• 2003

수용성 고분자인 폴리(비닐 알코올) (PVA)과 키토산에 제 4급 암모늄염을 도입하여 합성한 수용성 키토산 유도체인 N-(2-하이드록시)프로필-3-트리메틸 키토산 클로라이드 (HTCC)를 수용액 상태로 하여 용액 블렌딩하고 이를 캐스팅하여 PVA/HTCC 블렌드 필름을 제조한 후 두 고분자 사이의 혼화성과 블렌드 필름의 특성을 FT-IR, DSC, DMA 및 TGA를 사용하여 검토하였다. HTCC 함량을 50%까지 변화시킨 본 연구의 혼합 범위에서 블렌드 필름들은 모두 투명한 상태를 나타내었으며, T$_{g}$와 T$_{m}$ 이 하나로 나타나 두 고분자 사이에 혼화성이 있음을 확인하였다. 또, HTCC의 우수한 항미생물성 때문에 HTCC가 1%만 포함되더라도 블렌드 필름은 우수한 항미생물성을 나타내었다.