• Title/Summary/Keyword: Single layer

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The vacancy diffusion and the formation of dislocation in graphene : Tight-binding molecular dynamics simulation

  • Lee, Gun-Do;Yoon, Eui-Joon;Hwang, Nong-Moon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.54-55
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    • 2010
  • Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

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Electrical Properties of SiGe HBTs designed with Bottom Collector and Single Metal Layer Structures (Bottom 컬렉터와 단일 금속층 구조로 설계된 SiGe HBT의 전기적 특성)

  • Choi, A-Ram;Choi, Sang-Sik;Kim, Jun-Sik;Yoon, Seok-Nam;Kim, Sang-Hoon;Shim, Kyu-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.8
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    • pp.661-665
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    • 2007
  • This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence $(<200^{\circ}C)$ on electrical properties. The feasible application in $1{\sim}2GHz$ frequency from measured data $BV_{CEO}{\sim}10V,\;f_T{\sim}14GHz,\;{\beta}{\simeq}110,\;NF{\sim}1dB$ using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

Simulated Nitrogen Removal for Double-Layered PVA/Alginate Structure for Autotrophic Single-Stage Nitrogen Removal (2중 구조의 PVA/alginate 겔 비드에서의 독립영양 단일공정 질소제거효율 시뮬레이션)

  • Bae, Hyokwon
    • Journal of Korean Society on Water Environment
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    • v.38 no.4
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    • pp.171-176
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    • 2022
  • Recently, an autotrophic single-stage nitrogen removal (ASSNR) process based on the anaerobic ammonium oxidation (ANAMMOX) reaction has been proven as an economical ammonia treatment. It is highly evident that double-layered gel beads are a promising alternative to the natural biofilm for ASSNR because of the high mechanical strength of poly(vinyl alcohol) (PVA)/alginate structure and efficient protection of ANAMMOX bacteria from dissolved oxygen (DO) due to the thick outer layer. However, the thick outer layer results in severe mass transport limitation and consequent lowered bacterial activity. Therefore, the effects of the thickness of the outer layer on the overall reaction rate were tested in the biofilm model using AQUASIM for ammonia-oxidizing bacteria (AOB), nitrite-oxidizing bacteria (NOB) and ANAMMOX bacteria. A thickness of 0.5~1.0 mm is preferred for the maximum total nitrogen (TN) removal. In addition, a DO of 0.5 mg/L resulted in the best total nitrogen removal. A higher DO induces NOB activity and consequent lower TN removal efficiency. The optimal density of AO B and NO B density was 1~10% for a 10% ANAMMOX bacterial in the double-layered PVA/alginate gel beads. The real effects of operating parameters of the thickness of the outer layer, DO and concentrations of biomass balance should be intensively investigated in the controlled experiments in batch and continuous modes.

A STUDY ON THE FORMATION OF SHEAR BONDING STRENGTH AND HYBRID LAYER ACCORDING TO THE APPLICATION TIME AND FREQUENCY OF AN ALL-IN-ONE SYSTEM IN PRIMARY TEETH. (유치에서 All-In-One system의 적용 시간과 적용 횟수에 따른 전단 결합 강도 및 혼성층 형성에 관한 연구)

  • Hong, Sang-Jin;Park, Jong-Whi;Park, Heon-Dong;Lee, Sang-Ho
    • Journal of the korean academy of Pediatric Dentistry
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    • v.30 no.2
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    • pp.263-271
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    • 2003
  • The purpose of the present study was to evaluate the patterns of hybrid layer according to the application time and the frequency and its effects on the shear bonding strength of All-In-One system in primary teeth. A single bonding agent(Scotchbond Multi-Purpose Plus, 3M) and an All-In-One system(Prompt L-pop, 3M ESPE) were applied on the dentin varying the application time and the frequency in primary teeth. Shear bond strength was measured and the patterns of hybrid layers were observed by SEM. The following results were obtained ; 1. The shear bonding strength of single bonding agent was significantly higher than that of All-In-One system(P<0.05). 2. The shear bonding strength of All-In-One system applied twice or 3 times were higher than that of applied once (P<0.05). And thickness of the hybrid layer was increased when applied twice or 3 times compared to once. 3. The shear bonding strength of All-In-One system when applied for 15 second and 30 second were higher than that of 7 second (P<0.05). And the hybrid layer thickness of 15 second and 30 second's application time were higher than that of 7 second. 4. Thickness of hybrid layer applied with single bonding agent was $2-4{\mu}m$ and that of All-In-One system was $1-2{\mu}m$.

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Fuzzy Single Layer Perceptron using Dynamic Adjustment of Threshold (동적 역치 조정을 이용한 퍼지 단층 퍼셉트론)

  • Cho Jae-Hyun;Kim Kwang-Baek
    • Journal of the Korea Society of Computer and Information
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    • v.10 no.5 s.37
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    • pp.11-16
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    • 2005
  • Recently, there are a lot of endeavor to implement a fuzzy theory to artificial neural network. Goh proposed the fuzzy single layer perceptron algorithm and advanced fuzzy perceptron based on the generalized delta rule to solve the XOR Problem and the classical Problem. However, it causes an increased amount of computation and some difficulties in application of the complicated image recognition. In this paper, we propose an enhanced fuzzy single layer Perceptron using the dynamic adjustment of threshold. This method is applied to the XOR problem, which used as the benchmark in the field of pattern recognition. The method is also applied to the recognition of digital image for image application. In a result of experiment, it does not always guarantee the convergence. However, the network show improved the learning time and has the high convergence rate.

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Performance of Single Cells with Anode Functional Layer for SOFC

  • Choi, Jin-Hyeok;Lee, Tae-Hee;Park, Tae-Sung;Yoo, Young-Sung
    • New & Renewable Energy
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    • v.5 no.1
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    • pp.11-17
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    • 2009
  • To improve the performance of the anode-supported Solid Oxide Fuel Cell (SOFC) which can be operated at an intermediate temperature, the functional layer (FL) is introduced on a anode substrate. And the scandia-stabilized zirconia (ScSZ) and samaria-doped ceria (SDC) which have higher ionic conductivity and better chemical stability than yttria-stabilized zirconia (YSZ) are used as material for the anode FL with the Ni, The fabrication process of anode-supported single cell with the anode FL was established and the power density of those was evaluated. As a result, the sample with anode FL (Ni-YSZ) has higher power density than normal cell. The single cell which was composed of the FL (Ni-YSZ) and electrolyte (YSZ) showed about $550mW/cm^2$ of the maximum power density at $650^{\circ}C$ and $1430mW/cm^2$ at $750^{\circ}C$ respectively, In case of the single cell using the ScSZ and SDC as anode FL, the performance of samples decreased rapidly and those showed unstable voltage during long-term test. In case of using methane as a fuel, the cell performance with each FL decreased comparing with $H_2$ fuel. In the region of a high current density, there are large concentration polarizations.

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Study on CeO2 Single Buffer on RABiTS for SmBCO coated Conductor (SmBCO 초전도 층착을 위한 RABiTS상의 CeO2 단일 버퍼 연구)

  • Kim, Tae-Hyung;Kim, Ho-Sup;Lee, Nam-Jin;Ha, Hong-Soo;Ko, Rock-Kil;Ha, Dong-Woo;Song, Kyu-Jeong;Oh, Sang-Soo;Park, Kyung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.546-549
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    • 2007
  • As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost. Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique. 100 nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $1\;{\mu}m-thick$ SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-5%W substrate. Critical current of 90 A/cm was obtained for the SmBCO coated conductors.

Gradient YZO Buffer Deposition on RABiTS for Coated Conductor

  • Kim, T.H.;Kim, H.S.;Ko, R.K.;Song, K.J.;Lee, N.J.;Ha, D.W.;Ha, H.S.;Oh, S.S.;Pa, K.C.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.240-241
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    • 2007
  • In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

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Optical properties of ZnS ceramics by hot press stack sintering process (고온 가압 적층 소결에 의한 황화아연 세라믹스의 광학성 특성)

  • Park, Buem-Keun;Paik, Jong-Hoo
    • Journal of Sensor Science and Technology
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    • v.30 no.3
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    • pp.148-153
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    • 2021
  • During the manufacture of a ZnS lens with excellent transmittance in the mid-infrared region (3-5 ㎛) by the hot-press process, a single-layer sintering method is used in which one lens is manufactured in one process. Additional research is required to improve this single-layer sintering method because of its low manufacturing efficiency. To solve this problem, the variation in optical properties of ZnS lenses with change in sintering temperature was investigated by introducing a Stack sintering method that can sinter multiple lenses simultaneously. A carbon paper was placed between the molded lenses and sintered into five layers. The average permeability of 67% at medium infrared wavelengths of 3-5 ㎛ was excellent under the following sintering conditions: pressure of 50 MPa and temperature of 850℃. This value is 1% less than the average permeability in the case of single-layer sintering of the ZnS lens. It was confirmed that the stack sintering method developed in this study can be used to manufacture a large number of lenses with excellent characteristics in a single process.

The growth of superlattice IGZO thin films using ZnO buffer layer grown by thermal atomic layer deposition

  • Jo, Seong-Un;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.162-163
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    • 2013
  • Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

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