• Title/Summary/Keyword: Single diode laser

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Widely Tunable Coupled-ring Reflector Laser Diode Consisting of Square Ring Resonators

  • Kim, Su-Hyun;Byun, Young-Tae;Kim, Doo-Gun;Dagli, Nadir;Chung, Young-Chul
    • Journal of the Optical Society of Korea
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    • v.14 no.1
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    • pp.38-41
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    • 2010
  • We design and fabricate a widely tunable laser diode made of InGaAsP-InP. The diode is monolithically integrated with a wavelength-selective coupled-ring reflector and semiconductor amplifiers. For realization of a compact size device, deeply etched multi-mode interference couplers and square ring resonators composed of total-internal-reflection mirrors are adopted and fabricated using a self-aligned process. It is demonstrated that the laser diode exhibits single mode operation and 16 nm tuning range with side-mode-suppression-ratio exceeding 20 dB.

Unidirectonal single-mode operation of a Nd:YAG laser by using a planar semimonolithic ring cavity (평면 반일체 고리형 공진기를 이용한 Nd:YAG 레이저의 단방향 단일 모드 발진)

  • 박종락;이해웅;윤태현;정명세
    • Korean Journal of Optics and Photonics
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    • v.10 no.4
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    • pp.311-317
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    • 1999
  • Unidirectional single-mode operation of a diode-pumped Nd:YAG laser with a planar semimonolithic ring cavity has been demostrated at 1064 nm. The semimonolithic cavity consists of a laser active medium placed in a magnetic field, a crystal quartz plate, and an output coupling mirror. They form an optical diode by acting each part as a Faraday rotator, a reciprocal polarization rotator and a partial polarizer, respectively. An eigenpolarization theory for the cavity configuration was presented and losses for the eigenmodes were calculated. A pump-limited single-mode output power of 155 mW and a slope efficiency of 17% were obtained when the laser was pumped by a 1.2 W, 809 nm diode-laser. A laser linewidth of less than 100 kHz is inferred from a beat note frequency spectrum between two identical laser systems and continous single-mode tuning range was more than 2 GHz.

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Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides

  • Leem, Young-Ahn;Kim, Ki-Soo;Song, Jung-Ho;Kwon, O-Kyun;Kim, Gyung-Ock
    • ETRI Journal
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    • v.32 no.2
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    • pp.339-341
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    • 2010
  • The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of $3.7{\mu}m$. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 ${\mu}m$), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

Proposal and Analysis of Distributed Reflector-Laser Diode Integrated with an Electroabsorption Modulator

  • Kwon, Oh Kee;Beak, Yong Soon;Chung, Yun C.;Park, Hyung-Moo
    • ETRI Journal
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    • v.35 no.3
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    • pp.459-468
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    • 2013
  • A novel integrated laser, that is, a distributed reflector laser diode integrated with an electroabsorption modulator, is proposed to improve the output efficiency, single-mode stability, and chirp. The proposed laser can be realized using the selective metalorganic vapor phase epitaxy technique (that is, control of the width of the insulating mask), and its fabrication process is almost the same as the conventional electroabsorption modulated laser (EML) process except for the asymmetric coupling coefficient structure along the cavity. For our analysis, an accurate time-domain transfer-matrix-based laser model is developed. Based on this model, we perform steady-state and large-signal analyses. The performances of the proposed laser, such as the output power, extinction ratio, and chirp, are compared with those of the EML. Under 10-Gbps NRZ modulation, we can obtain a 30% higher output power and about 50% lower chirp than the conventional EML. In particular, the simulation results show that the chirp provided by the proposed laser can appear to have a longer wavelength side at the leading edge of the pulse and a shorter wavelength side at the falling edge.

Characteristics of Visible Laser Diode and Its Injection-Locking (가시광 다이오드 레이저의 스펙트럼 및 주입-잠금 특성분석)

  • 남병호;박기수;권진혁
    • Korean Journal of Optics and Photonics
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    • v.5 no.2
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    • pp.278-285
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    • 1994
  • We investigated the spectral characteristics for temperature and driving current change in visible laser diode. As a result of spectrum analysis, the ratio of frequency change for temperature and driving current change were about $33 GHz/^{\circ}C$, 6.6 GHz/mA in the region which was not mode hopping range. Compared to the sharp mode hopping in the near IR single mode AlGaAs lasers, the visible laser diode showed relatively broad multimode operation in the mode hopping region. We performed the experiment of injection-locking characteristics analysis for visible laser diode. Locking half bandwidth(LHBW) was measured 0~5.0 GHz for $0~25\muW$ input power and it was dependent on the input power. Also, LHBW for polarization angle was dependent on the difference of polarization angle between master laser and slave laser. The phase change of injection-locked output beam of the slave laser diode as a function of the drive current was measured in the interferometer which was composed of master laser and slave laser. The ratio of phase change with the slope of 5.0~1.3 rad/mA was obtained within injection-locking range for the change of $2~25\muW$ input power. power.

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A Study on the In-process Measurement of Metallic Surface roughness in Cylindrical Grinding by Diode Laser (원통연삭가공시 반도체 레이저 빔을 이용한 금속표면거칠기의 인프로세스 측정)

  • 김희남
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1995.03a
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    • pp.1-8
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    • 1995
  • This paper proposed a simple method for measuring surface roughness of ground surface. utilizing non-contact in-process measuring system using the diode laser. The measurement system is consisted of a laser unit with a diode laser and a cylindrical lens a detecting unit with polygon mirror and CCD array sensor. and a signal processing unit with a computer and device. During operation, this measuring system can provide information on surface roughness in the measuring distance with a single sampling and simultanilusly monitor the state of the grind wheel. The experimental results, showed that the increase of the feed rate and the dressing speed an caused increase in the surface roughness and when the surface roughness is 4Rmax-10Rmax, the cutting speed is 1653m/min-1665m/min. the feed rate is 0.2m/min-0.9m/min, the dressing speed is 0.2mm/rev-0.4mm/rev, the stylus method and the in-process method can be obtained the same results. thus under limited working conditions. using the proposed system. the surface roughness of the ground surface during cylindrical grinding can be obtained through the in-process measurement method using the diode laser.

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Guided Missile Initiation Technologies, Now and Tomorrow (유도무기 착화기술의 현황과 발전 전망)

  • 장석태
    • Journal of the Korean Society of Propulsion Engineers
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    • v.4 no.1
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    • pp.102-108
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    • 2000
  • The comparative evaluation/analysis of the initiation technologies currently being used, and the advanced initiation technologies currently being developed lot the aerospace and defense applications was performed. The evaluation criteria used were the compliance, performance, reliability, safety, and cost. The results clearly indicate that there is no one single initiation technology that will satisfy entire spectrum of initiation system requirements. Each initiation system architecture would require different initiation technologies that will satisfy the overall system performance requirements. However, laser initiation, particularly, the laser diode initiation has been getting more attention in recent years. The laser diode initiation, for most part, eliminates EMI and ESD concerns. In addition, laser diode initiation system can also be designed into relatively small packages, are optically connected systems by very light weight cables, are relatively easily designed to meet variety of initiation system requirements. Due to the these compelling factors, laser diode initiation has potential of becoming common initiation systems for many different aerospace and defense application.

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A Study on the In-Process Measurement of Metallic Surface Roughness in Cylindrical Grinding by Diode Laser (원통연삭가공시 반도체 레이저 빔을 이용한 금속표면거칠기의 인프로세스 측정)

  • 김희남;이주상
    • Journal of the Korean Society of Safety
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    • v.10 no.3
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    • pp.30-41
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    • 1995
  • This paper proposed a simple method for measuring surface roughness of ground surface. Utilizing non-contact in-process measuring system using the diode laser. The measurement system is consisted of a laser unit with a diode laser and a cylindrical lens, a detecting unit with polygon mirror and CCD array sensor, and a signal processing unit with a computer and device. During operation, this measuring system can provide information on surface roughness in the measuring distance with a single sampling and simultaniously monitor the state of the grind wheel. The experimental results, showed that the Increase of the feed rate and the dressing speed an caused increase in the surface roughness and when the surface roughness is 4Rmax-10Rmax, the cutting speed is 1653m/min-1665m/min, the table speed is 0.2n1/min -0.9m/min, the dressing speed is 0.2mm/rev~0.4mm/rev, the stylus method and the in-process method can be obtained the same results. Thus, under limited working conditions, using the proposed system, the surface roughness of the ground surface during cylindrical grinding can be obtained through the in-process measurement method using the diode laser.

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Experimental Investigation of a High-repetition-rate Pr3+:YLF Laser with Single-frequency Oscillation

  • Dai, Weicheng;Jin, Long;Dong, Yuan;Jin, Guangyong
    • Current Optics and Photonics
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    • v.5 no.6
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    • pp.721-729
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    • 2021
  • We demonstrate a Pr3+:YLF 639.7-nm laser with single-frequency output based on the Q-switched pre-lase technology, pumped by a fiber-coupled GaN blue laser diode. The pre-lase technology is realized by the step-type loss of the acousto-optical Q-switched device. The conclusions of the theoretical research are verified experimentally. The mode-suppression ratio was 44 dB at the single-frequency laser output. Detection by interferometer verified the realization of the stable single-frequency laser. In addition, the emission spectrum had a linewidth of 139.9 MHz, measured by Fabry-Perot interferometer. The single-frequency laser's single-peak power was over 19.7 W with 98.8-ns pulse duration, obtained under an absorption power of 1.74 W.