• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.31-38
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• 2004

PMN-PT, a piezoelectric single crystal, has many useful applications such as sensors and actuators. In this paper, all the elastic, piezoelectric, and dielectric constants of the PMN-32％PT single crystals were measured by the resonance method. For the rhombohedral symmetry, a total of twelve independent material constants were measured such as six elastic compliance constants at constant electric field, two dielectric constants at constant stress, and four piezoelectric constants d. Seven sets of crystal samples of each different geometry were prepared for the measurement of length-thickness extensional, thickness extensional, radial, length extensional and thickness shear modes of vibration, respectively. In order to check the validity of the measurement, experimental impedance spectrum of the PMN-PT crystal was compared with numerical data spectrum calculated with the measured material constants. The good agreement between the two spectra confirmed validity of the results in this paper.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.11-18
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• 1995

Abstract ${\Alpha} - Al_2O_3$ tube shaped single crystals were grown by the EFG method. By using two different heating arrangement, tube shaped single crystals were grown. Comparing the grown tube shaped single crystals, tube crystal growth conditions were established.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.280-286
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• 1998

LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.875-879
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• 2002

$Pb_{1-x}$ $Cd_{x}$ $I_2$ (x=0.0, 0.2, 0.5, 0.7, 0.9, 1.0) single crystals were grown by using Bridgman method and their structural and optical properties were investigated from the measurement of X-ray diffraction, optical absorption and photoluminescence. As-grown single crystals have hexagonal closed packed layered structure. The values of lattice constant c decrease with increasing composition x. Direct and indirect transition optical energy band gaps are calculated from optical absorption spectra measured at room temperature. They increase exponentially from 2.3eV to 3.2 eV with increasing composition x. The energies of photoluminescence peak due to donor bound exciton measured at 6K increase with increasing composition . However, the peak energies of donor-acceptor pair (DAP) are independent of the optical energy band gaps of $Pb_{1-x}$/$Cd_{x}$ $I_2$ single crystals.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Progress in Superconductivity
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• v.11 no.2
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• pp.118-122
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• 2010

Electrical transport properties were measured on $SmFeAsO_{0.85}$ single crystals along the c-axis for various temperatures and magnetic fields. For the measurements a mesa structure was fabricated on the surface of the single crystals. Samples showed a metallic temperature dependence of resistance and current-voltage curves without hysteretic multiple branch splitting that is usually observed in tunneling Josephson junctions. In addition, in ab-planar magnetic fields, samples did not show the Fraunhofer-type field modulation of the critical current. All these features indicate that the c-axis transport characteristics of $SmFeAsO_{0.85}$ single crystals are explained by the anisotropic bulk superconductivity rather than Josephson tunneling.

• Journal of the Mineralogical Society of Korea
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• v.10 no.1
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• pp.18-32
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• 1997

Analysis of geological data, relating to occurrence and formation of diamonds as well as host rocks, inclined author to have different outlook on the diamond genesis and to establish a proposition on their formation at pneumatolytic-hydrothermal conditions near superficial Earth zones. Based on that theoretical foundations and experimental works, the first low-pressure and low-temperature hydrothermal diamond synthesis from water solution in pressure autoclave was executed. As a result, the natural diamond seed crystal grew bigger ad coupling of the synthetic diamond single-crystalline grains were obtained. SEM documentation proofs that parallely paragenetic crystallization of quartz and diamond, and nucleation of new octahedral diamond crystals brush take place on the seed crystal surface. Forecast of none times growth of diamond industrial application at 2000 and seventeen times at 2010 with reference to 1995, needs technology of large and pure single-crystals diamond synthesis. Growth of the stable and destressed diamond single-crystals in the pseudo-metastable diamond plot, may be realized with processes going through the long time and with participation of free radicals catalysts admixtures only. Sol-gel colloidal processes are an example of environment which form stable crystals in thermodynamically unstable conditions through a long time. Paper critically discusses a whole way of studies on the diamond synthesis, from high-pressure and high-temperature processes through chemical vapour deposition up to hydrothermal experiments.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.19-19
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• 2003

A cubic perovskite-type CaCu₃Ti₄O/sub 12/ compound has recently drawn a great attention because of an extraordinary high permittivity (～10⁴ at 1 kHz) at room temperature and its near temperature-independence over a wide temperature region, and thus numerous literature have been reported on CCTO polycrytalline ceramics and thin films. However, only a few literature have been reported on the CCTO single due to the lack of information about the CCTO primary phase field. On the basis of our recent experimental determination of the CCTO primary phase field, we could grow ACu₃Ti₄O/sub 12/(A=Ca, Sr) single crystals using both top-seeded solution growth and flux growth methods. This presentation will include three major parts. In part I, the thermal decomposition reaction of CCTO and its primary phase field in the CaO-CuO-TiO₂ ternary system will be presented. Detailed growth conditions of ACu₃Ti₄O/sub 12/(A=Ca, Sr) single crystals and characteristics of as-grown crystals will be followed in Part II. Part III will be comprised of dielectric properties of as-grown ACu₃Ti₄O/sub 12/(A=Ca, Sr) single crystals. Our experimental results will be compared with those of previous reports for discussion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.466-474
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• 2021

[011] poled ternary Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals have been investigated for active materials for acoustic transducers because of their high piezoelectric properties in both shear and transverse modes. In order to use [011] poled PIN-PMN-PT single crystals for acoustic transducers, the characterization of full-matrix material properties is required. In this study, full sets of compliance, dielectric, and piezoelectric constants of [011] poled rhombohedral PIN-PMN-PT were measured by a resonance method. Dimensions and geometries of 12 samples were proposed for measuring 17 independent material constants of [011] poled rhombohedral PIN-PMN-PT single crystals. Two sets of samples with different PT concentrations, 0.24PIN-0.49PMN-0.27PT and 0.24PIN-0.46PMN-0.30PT, were fabricated and their material properties were measured. Measured impedance spectra and simulated impedance spectra of the samples were compared to check the accuracy of the measurements.