• Archives of Pharmacal Research
• /
• v.21 no.6
• /
• pp.645-650
• /
• 1998

The dual drug-loaded alginate beads simultaneously containing drug in inner and outer layers were prepared by dropping plain (single-layered) alginate beads into $CaCl_2$ solution. The release characteristics were evaluated in simulated gastric fluid for 2 h followed by intestinal fluids thereafter for 12 h. The surface morphology and cross section of dual drug-loaded alginate beads was also investigated using scanning electron microscope (SEM). The poorlv water-soluble ibuprofen was chosen as a model drug. The surface of single-layered and dual drug-loaded alginate beads showed very crude and roughness, showing aggregated particles, surface cracks and rough crystals. The thickness of dual drug-loaded alginate beads surrounded by outer layer was ranged from about 57 to 329mcm. The distinct chasm between inner and outer layers was also observed. In case of single-layered alginate bead, the drug was not released in gastric fluid but was largely released in intestinal fluid. However, the release rate decreased as the reinforcing $Eudragit^{\circledR}$ polymer contents increased. When the plasticizers were added into polymer, the release rate largely decreased. The release rate of dual drug-loaded alginate beads was stable in gastric fluid for 2 h but largely increased when switched in intestinal fluid. The drug linearly released for 4 h followed by another linear release thereafter, showing a distinct biphasic release characteristics. There was a difference in the release profiles between single-layered and dual drug-loaded alginate beads due to their structural shape. However, this biphasic release profiles were modified by varying formulation compositions of inner and outer layer of alginate beads. The release rate of dual drug-loaded alginate beads slightly decreased when the outer layer was reinforced with $Eudragit^{\circledR}$ RS1OO polymers. In case of dual drug-loaded alginate beads with polymer-reinforced outer layer only, the initial amount of druc released was low but the initial release rate (slope) was higher due to more swellable inner cores when compared to polymer-reinforced inner cores. The current dual drug-loaded alginate beads may be used to deliver the drugs in a time dependent manner.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.3
• /
• pp.124-128
• /
• 2013

In this research, cubic zirconia is synthesized with a refined CaO from shells as a stabilizer through Skull melting method. The proper process time and concentration are defined by Hydration reaction to produce the refined CaO after two different treatments using 0.1 mol% of HCl respectively with Cockle shell. The highest purity of CaO is reached when the shell is immersed in 1 mol% HCl. In Hydration reaction step, the pure $Ca(OH)_2$ is produced at $45^{\circ}C$ for 24 hours. The highest purity of CaO is measured when the $Ca(OH)_2$ is treated by heat at $1200^{\circ}C$ for 5 hours. The single crystals are grown through Skull melting method by adding the different contents of the refined CaO from 10 mol% to 30 mol% into $ZrO_2$. The frequency of High-frequency oscillator used for Skull melting method is 3.4 MHz. The descending speed of the single crystal is 3 mm/hour. The grown length of the single crystal is 4 cm. As a result of this study, 15 mol% of CaO has the best crystallinity.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.8
• /
• pp.1703-1710
• /
• 2009

The single-crystal structure of |$Ca_{35.5}$|[$Si_{121}Al_{71}O_{384}$]-FAU, $Ca_{35.5}Si_{121}Al_{71}O_{384}$ per unit cell, a = 24.9020(10) $\AA$, dehydrated at 673 K and 2 ${\times}\;10^{-6}$Torr, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\overline{3}$m at 294 K. The large single crystals of zeolite Y (Si/Al = 1.70) were synthesized up to diameters of ${\mu}m\;and\;Ca^{2+}$-exchanged zeolite Y were prepared by ion exchange in a batch method of 0.05 M aqueous Ca($NO_3)_2$ for 4 hrs at 294 K. The structure was refined using all intensities to the final error indices (using only the 971 reflections for which $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.038 (based on F) and $R_2$ = 0.172 (based on $F^2$). About 35.5 $Ca^{2+}$ ions per unit cell are found at an unusually large number of crystallographically distinct positions, four. Nearly filling site I (at the centers of the double 6-rings), 14.5 octahedrally coordinated $Ca^{2+}$ ions (Ca-O = 2.4194(24) $\AA$ and O-Ca-O = 87.00(8) and 93.00($8^o$) are found per unit cell. One $Ca^{2+}$ ion per unit cell is located at site II’ in the sodalite cavity and extends 0.50 $\AA$ into the sodalite cavity from its 3-oxygen plane (Ca-O = 2.324(13) $\AA$ and O-Ca-O = 115.5(10)o). The remaining twenty $Ca^{2+}$ ions are found at two nonequivalent sites II (in the supercages) with occupancies of 10 and 10 ions, respectively. Each of these $Ca^{2+}$ ions coordinates to three framework oxygens, either at 2.283(3) or 2.333(5) $\AA$, respectively, and extends either 0.24 or 0.54 $\AA$, respectively, into the supercage from the three oxygens to which it is bound. In this crystal, site I is the most populated; sites II’ and II are only sparsely occupied.$Ca^{2+}$+ appears to fit the octahedral site I best. No cations are found at sites III or III’, which are clearly less favorable for $Ca^{2+}$ ions in dehydrated zeolite Y.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.4
• /
• pp.63-68
• /
• 2019

Dielectric and piezoelectric properties of PIN-PMN-PT piezoelectric single crystals with variation of temperature and compressive stress were investigated. The crystal phase of the single crystal was changed from the ferroelectric rhombohedral structure to tetragonal structure in the 110℃ region and from the tetragonal structure to the paraelectric cubic structure in the 190℃ region. The piezoelectric constant and relative dielectric constant were calculated from the rate of change of polarization and displacement with the application of electric field, which was similar to the value measured from the instrument. As the compressive stress applied to the sample increased, the piezoelectric constant d₃₃ and relative dielectric constant values tended to increase. When the compressive stress applied to the sample at 5℃ was 60 MPa, the d₃₃ was calculated as 4,500 pC/N. At 60℃, the relative dielectric constant of 62000 was calculated when the compressive stress applied to the sample was 40 MPa. The increase in piezoelectric constant and relative dielectric constant when the compressive stress increased could be attributed to the phase transition from the rhombohedral structure to orthorhombic.

• The Journal of the Acoustical Society of Korea
• /
• v.41 no.3
• /
• pp.278-286
• /
• 2022

In this study, a 33-mode Free-Flooded Ring (FFR) transducer was designed to apply piezoelectric single crystal PIN-PMN-PT, which has high piezoelectric constants and electromechanical coupling coefficient. To ensure low-frequency high transmitting sensitivity characteristics with a small size of FFR transducer, the commercial FFR transducer based on piezoelectric ceramics was compared. To develop the FFR transducer with broadband characteristics, a piezoelectric segmented ring structure inserted with inactive elements was applied. The oil-filled structure was applied to minimize the change of acoustic characteristics of the ring transducer. It was verified that the transmitting voltage response, underwater impedance, and beam pattern matched the finite element numerical simulation results well through an acoustic test. The difference in the transmitting voltage response between the measured and the simulated results is about 1.3 dB in cavity mode and about 0.3 dB in radial mode. The fabricated FFR transducer had a higher transmitting voltage response compared to the commercial transducer, but the diameter was reduced by about 17 %. From this study, it was confirmed that the feasibility of a single crystal-applied FFR transducer with compact size and high-power characteristics. The effectiveness of the performance prediction by simulation was also confirmed.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.4
• /
• pp.31-37
• /
• 2017

Recently, there has been substantial interest in flexible and wearable devices whose properties and performances are close to conventional devices on hard substrates. Despite the advancement on flexible devices with organic semiconductors or carbon nanotube films, their performances are limited by the carrier scattering at the molecular to molecular or nanotube-to-nanotube junctions. Here in this study, we demonstrate on the vertical semiconductor crystal array embedded in flexible polymer matrix. Such structures can relieve the strain effectively, thereby accommodating large flexural deformation. To achieve such structure, we first established a low-temperature solution-phase synthesis of single crystalline 3D architectures consisting of epitaxially grown ZnO constituent crystals by position and growth direction controlled growth strategy. The ZnO vertical crystal array was integrated into a piece of polydimethylsiloxane (PDMS) substrate, which was then mechanically detached from the hard substrate to achieve the freestanding ZnO-polymer composite. In addition, the characteristics of transferred ZnO were confirmed by additional structural and photoluminescent measurements. The ZnO vertical crystal array embedded in PDMS was further employed as pressure sensor that exhibited an active response to the external pressure, by piezoelectric effect of ZnO crystal.

• Journal of the Mineralogical Society of Korea
• /
• v.28 no.2
• /
• pp.195-207
• /
• 2015

Physical properties of strontianite ($SrCO_3$) synthesized under variable conditions such as different ionic strength, temperature, and aging time were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). All synthesized samples show a single phase of strontianite. Crystallinity of the synthesized strontianite increases with increasing temperature and ionic strength with $NaNO_3$. Crystal sizes of the samples increase dramatically, and their morphology changes from rod or dendritic to prismatic shape as ionic strength and temperature of the solution increase. In addition, crystal sizes increase, and their morphology changes from rod or prismatic crystals to spheroidal aggregates with increasing aging time. These results suggest that changes in conditions of the synthesis for strontianite play an important role in controlling the crystallinity and morphology of results provide crucial information on the prediction for the physical properties of strontianite under different conditions during the formation of strontianite crystals.

• Journal of the Korean Chemical Society
• /
• v.37 no.1
• /
• pp.76-82
• /
• 1993

Two crystal structures of fully dehydrated Ca(II) and Tl(I) exchanged zeolite A, $Ca_{5.6}Tl_{0.8}-A (a = 12.242(2){\AA})\;and\;Ca_{1.4}Tl_{9.2}-A (a = 12.191(1){\AA})$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Pm3m at 21(1)$^{\circ}C$. All crystals were ion exchanged in flowing streams of mixed $Ca(NO_3)_2\;and\;TINO_3$ aqueous solution with total concentration of 0.05M. All crystals were dehydrated at 360$^{\circ}C$ under $2{\times}10^{-6}\;torr$ for two days. The structures of the dehydrated $Ca_{5.6}Tl_{0.8}-A$ and $Ca_{1.4}Tl_{9.2}-A$ were refined to the final error indicies, $R_1$ = 0.072 and $R_2$ = 0.076 with 179 reflections for I > 3$\sigma$(I), and $R_1$ = 0.048 and $R_2$ = 0.043 with 226 reflections for I > 3$\sigma$(I), respectively. In each structure, Ca(II) ions are located on threefold axes associated with three 6-ring oxygens. $Ca^{2+}$ ions prefer to 6-ring sites and $Tl^+$ ions prefer to 8-ring sites when total number of exchanged cations per unit cell is more than 8.

• 전기의세계
• /
• v.28 no.4
• /
• pp.53-63
• /
• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Korean Journal of Materials Research
• /
• v.3 no.2
• /
• pp.121-130
• /
• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.