• 센서학회지
• /
• 제29권1호
• /
• pp.59-62
• /
• 2020

Currently, increasing attention is being paid to relaxor-based ferroelectric single crystals in photoacoustic images, especially for high-end applications. Among the crystals are (1-x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-100xPT) single crystals located near their morphotropic phase boundary (x = 0.30-0.35) because of their ultrahigh piezoelectric and electromechanical coupling properties. The alternating current poling (ACP) treatment, rather than the conventional direct current poling treatment, has recently been spotlighted due to its effectiveness in enhancing the piezoelectric properties. So far, it has been suggested that the enhanced piezoelectricity originates from either a domain miniaturization to nanodomains or from an electric-field-induced monoclinic symmetry. In this study, we demonstrate by thermally stimulated depolarization current measurements that the effect of ACP is too complex to be explained using a single mechanism and that the proposed electric-field-induced monoclinic symmetry is unlikely to exist.

• 한국결정성장학회지
• /
• 제6권4호
• /
• pp.532-542
• /
• 1996

Floating zone(FZ)법으로 육성하고 annealing한 undoped $LiNbO_3$ 단결정 및 MgO 또는 ZnO를 첨가한 $LiNbO_3$ 단결정의 전기적,광학적 특성을 조사하였다. 전기전도도, 유전율 및 전이온도, 전기.기계결합계수등의 전기적 특성과 광투과율, 굴절율 등의 광학적 특성을 측정하였으며, 비선형 광학특성의 척도라 할 수 있는 비선형 굴절율을 이론적으로 계산하였다. Undoped $LiNbO_3$ 단결정과 MgO 또는 ZnO를 첨가한 $LiNbO_3$ 단결정의 전기적, 광학적 특성을 비교함으로서 MgO 또는 ZnO의 첨가가 $LiNbO_3$ 단결정의 전기적 및 광학적 특성에 미치는 영향을 조사하였다.

• 한국결정학회지
• /
• 제7권1호
• /
• pp.73-80
• /
• 1996

단일 온도대역 수평 Bridgman(1-T HB)법에 의해 2인치 직경의 GaAs 단결정을 성장시키기 위하여 그 장치를 설계·제작하였고, undoped, Si-doped 및 Zn-doped 단결정을 성장하였다. 단결정성의 측면에서 성장횟수별 비로 0.73의 단결정성을 보였고, 격자결함 밀도(etch pit density)는 n-type의 경우 평균 5,000/cm2, p-type의 경우 10,000/cm2, 그리고 undoped의 경우 20,000/cm2 정도를 보였다. 한편 undoped GaAs 단결정의 경우, Hall 측정에 의한 carrier 농도가 ∼1×1016/cm3인 것으로 나타나 기존의 이중 온도대역(2-T : double temperature zone) 또는 삼중 온도대역(3-T : three temperature zone) 수평 Bridgman 방식에 비하여 Si 유입량이 절반 수준인 것으로 측정되었다. 따라서 1-T HB 방식에 의하여 2-T나 3-T HB 방법보다 나은 수율을 갖고 더 순도가 높은 GaAs 단결정을 성장시킬 수 있었다.

• 한국자기공명학회논문지
• /
• 제22권4호
• /
• pp.107-114
• /
• 2018

In this exploration, the nuclear magnetic resonance of the $^{207}Pb$ nucleus in $PbWO_4:Mn^{2+}$ and $PbWO_4:Dy^{3+}$ Single Crystals using FT-NMR spectrometer is investigated. The line width of the resonance line for the $^{207}Pb$ nucleus decreases as temperature increases due to motional narrowing. The chemical shift of $^{207}Pb$ NMR spectra also increases as temperature decreases for both crystals. The spinlattice relaxation times $T_1$ of $^{39}K$ nucleus were calculated as a function of temperature (180 K~400 K). The $T_1$ of $^{207}Pb$ nucleus decreases as temperature increases. The dominant relaxation mechanism at the studied temperature range can be deduced as the Raman process, which is the coupling between lattice vibrations and the nuclear spins. This deduction is substantiated by the fact that the nuclear spin-lattice relaxation rate $1/T_1$ of the $^{207}Pb$ nucleus in $PbWO_4:Mn^{2+}$ and $PbWO_4:Dy^{3+}$ single crystal is proportional to $T^2$, or temperature squared. The activation energies for the $^{207}Pb$ nucleus in $PbWO_4:Mn^{2+}$ and $PbWO_4:Dy^{3+}$ single crystals are $E_a=49{\pm}1meV$ and $E_a=47{\pm}2meV$, respectively.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
• /
• pp.8-8
• /
• 2002

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
• /
• pp.111-114
• /
• 1998

Lithium Niobate {{{{ { LiNbO}_{ 3} }}}} single crystals grown by Czichralski method at the congruent composition, have ferroelectric microdomains. These microdomins were investigated by chemical etching with hydrofluoric acid (HF) AND NITRIC ACID ({{{{ { HNO}_{3 } }}}}), and by us ing optical microscopy, scanning electron microscopy and atomic force microscopy

• Bulletin of the Korean Chemical Society
• /
• 제34권12호
• /
• pp.3903-3905
• /
• 2013

• 전기의세계
• /
• 제22권3호
• /
• pp.7-12
• /
• 1973

Single crystals of BaTiO$_{3}$ which were grown by Remeika's method were on reducing them is hydrogen atmosphere at about 400-1000.deg. C for about 30hrs. They became light brown and seems to have an effect on their properties by oxygen deffects especially at a Curie temperature of 122.deg. C exhibitted abnormal reducting resistivity. These semiconducting tendency were studied experimentally by observing through several electrical properties and were discussed on the basis of exchange semiconductor mechanism.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
• /
• pp.20-20
• /
• 2001

• 대한전기학회논문지
• /
• 제35권1호
• /
• pp.1-7
• /
• 1986

The GaAs bulk single crystals are grown by the Horizontal Bridgman method. During the growth, one of the problems in Bridgman method is the boat wetting between GaAs molten and silica boat. This boat wetting may result in another nucleation to form twin crystals. In this study, We find that the optimal size for sand blasting is 320 mesh. Backfilling the ampoule with argon gas during the vaccum bake-out decreaes the boat wetting. The reaction mechanism of Ga with quartz to produce suboxide, Ga2O, and sillion is discussed.