• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.12
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• pp.2328-2339
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• 1992

The propagation of coherent time-harmonic elastic L-and SV-waves is studied in a medium with random distribution of cylindrical inclusions. The purpose of the research is to characterize the dynamic elastic moduli and the attenuation properties of fiber-reinforced composite materials. The cylindes representing the fibers are assumed to be distributed in parallel with each other and the direction of incident waves are normal to the cylinder axes. A multiple scattering formula using the single scattering coefficients in conjunction with the Lax's quasicrystalline approximation is derived from which the dispersion relation for such medium is obtained. In order to formulate the multiple scattering interaction between cylinders, the pair correlation functions are generated by the Monte Carlo simulation technique. From the numerically evaluated complex wavenumbers, the propagation speed of the average wave, the coherent attenuation and the effective elastic moduli are presented as functions of frequency and fiber volume fraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.524-527
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• 2007

[ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1358-1366
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1350-1357
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• 1988

The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.463-472
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• 1997

A mesoporous molecular sieve, MCM-41, was synthesized and the effent of various initial pH of reaction mixtures on the synthesis and physical properties of MCM-41 was investigated. Adjustment of initial pH for reaction mixtures was made before starting hydrothermal reaction rather than during the reaction. Highly crystalline MCM-41 which shows pore diameters of $30{\AA}$ to $40{\AA}$ and specific surface areas greater than $1000m^2/g$ has been successfully prepared through a single adjustment of initial pH. Results also suggest that the initial pH adjustment has a significant effect on the formation of MCM-41 with a long-range ordered hexagonal array and an excellent thermal stability. Finally, it is speculated that the adjustment of initial pH might accelerate the dissolution of stable polymeric sodium silicate to highly reactive monomeric sodium silicate resulting in well-ordered MCM-41.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.4
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• pp.154-161
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• 2017

$Zn_2TiO_4$, which is a progenitor of zinc crystallization, plays a significant role in controlling the crystallization of willemite ($Zn_2SiO_4$) in forming glaze at low temperatures. Thus, $Zn_2TiO_4$ was used to formulate stable willemite and to gain structural control. When synthesized 15 wt% of $Zn_2TiO_4$ is added to engobe and then applied, it can manipulate its crystallization and location. Additionally, when colorant is added to $Zn_2TiO_4$ and then applied to engobe, the mixture's colorant effect can be shown at crystallization. Certain characteristics of synthesized $Zn_2TiO_4$ enable various engobes to be applied to clay bodies. With a single glazing, the crystallization, location, and color of the crystals can be discretionarily regulated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.577-584
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• 2015

A photovoltaic (PV) system generates electricity by installing a solar energy array; therefore, the photovoltaic system can be easily exposed to external factors, which include environmental factors such as temperature, humidity, and radiation. These factors-as well as shading, in particular-lead to power degradation. When there is an output loss in the solar cell of a PV module package, the output loss is partly controlled by the bypass diode. As solar cells become highly efficient, the characteristics of series resistance and parallel resistance improve, and the characteristics of reverse voltage change. A bypass diode is connected in parallel to the string that is connected in series to the PV module. Ideally, the bypass diode operates when the voltage is -0.6[V] around. This study examines the bypass diode operating time for different types of crystalline solar cells. It compares the reverse voltage characteristics between the single solar cell and polycrystalline solar cell. Special modules were produced for the experiment. The shading rate of the solar cell in the specially made solar energy module was raised by 5% each time to confirm that the bypass diode was operating. The operation of the bypass diode is affected not only by the reverse voltage but also by the forward bias. This tendency was verified as the number of strings increased.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.10-13
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• 2001

Effects of an anionic surfactant pentadecafluorooctanoic acid on the photoluminescence of porous silicon was investigated, which was prepared by photoelectrochemical etching at 4V of single crystalline n-type silicon (100) with the specific resistivity of $0.4\~0.8{\Omega}{\cdot}cm$. Photoluminescence shifted to shorter wavelength and its intensity decreased when the concentration of the surfactant increased. FT-IR and contact angle data supported the presence of the surfactant lying on the surface of porous silicon.