• Electrical & Electronic Materials
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• v.8 no.1
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• pp.71-76
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• 1995

The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• ETRI Journal
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• v.28 no.6
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• Applied Microscopy
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• v.25 no.4
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• pp.9-16
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• 1995

Ultrastructure of stemmata(larval eye) of 5th-instar larval in cabbage butterfly, Pieris rapae L, was morphologically investigated with light microscope, scanning electron microscope and transmission electron microscope Six stemmata are on each side of the head. Stemmata V and VI have a Y-shaped sulcus on the surface of their corneal lenses, the others have a columnar shaped process and smooth globular surface. The visual type of stemmata is resembled a single ommatidium of compound eye. The dioptric apparatus are a biconvex shaped cornea and crystalline cone. As a photoreceptor, each stemmata consists of 7 retinular cells arranged into 2 tiers. The first ceil tier of 3 distal retinular cells has formed a V-shaped cup rhabdome and the second cell tier of 4 basal retinular cells has formed a H-shaped fused rhabdome. Each retinular cell filled with pigment granules and contained multivesiclular bodies, coated vesicle and common organelles. The peripheral parts of retinular cells are enveloped by neuroglia cells and retinular cells are surrounded by 3 corneagenous cells. The distal portions of the 3 corneagenous cells contact each other, but the Y-shaped stemmata is separated from each other immediately under the cornea. The 7 axons from each stemma congregate into a bundle and each 7-axon group joins to form a stemmatal nerve, consisting of 42 retinular axons.

• Transactions of Materials Processing
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• v.23 no.4
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• pp.231-237
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• 2014

In the current study, a rate-dependent crystal plasticity finite element method (CPFEM) was used to simulate flow stress behavior and texture evolution of a body-centered cubic (BCC) crystalline material during plastic deformation at room temperature. To account for crystallographic slip and rotation, a rate-dependent crystal constitutive law with a hardening model was incorporated into an in-house finite element program, CAMPform3D. Microstructural heterogeneity and anisotropy were handled by assigning a crystallographic orientation to each integration point of the element and determining the stiffness matrix of the individual crystal. Uniaxial tensile tests of single crystals with different crystallographic orientations were simulated to determine the material parameters in the hardening model. The texture evolution during four different deformation modes - uniaxial tension, uniaxial compression, channel die compression, and simple shear deformation - was investigated based on the comparison with experimental data available in the literature.

• Progress in Superconductivity
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• v.7 no.1
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• pp.77-82
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• 2005

We report a successful fabrication of high-quality $SmBa_{2}Cu_{3}O_{7-{\delta}}$ (SmBCO) thin films on $LaAlO_3$(LAO)(100) single crystalline substrates by a modified TFA-MOD method. After the pyrolysis heat treatment of spin-coated films up to $400^{\circ}C$, SmBCO films were fired at various temperatures ranging from 810 to $850^{\circ}C$ in a reduced oxygen atmosphere (10 ppm $O_2$ in Ar). Optimally processed SmBCO films exhibited the zero-resistance temperature ($T_{c,zero}$) of 90.2 K and the critical current density ($J_c$) of $0.8\;MA/cm^2$ at 77K in self-field. Compared with the $J_c$ values (normally, > $2\;MA/cm^2$ at 77 K) of MOD-TFA processed YBCO films, rather depressed $J_c$ values in SmBCO films are most probably attributed to the existence of ${\alpha}$-axis oriented grains.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.405-410
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• 2008

Ceramics are widely used as plasma resistant materials in semiconductor industries. However, the plasma erosion resistance has not been properly evaluated in terms of microstructural changes during the exposure to plasma. In this study, microstructure developments of $Al_2O_3$ were investigated under the fluorine plasma conditions. In polycrystalline alumina, uniform erosion throughout the specimen as well as spatially distributed local erosion were observed. Local erosion was much more severe in lower purity alumina. In contrast to the polycrystalline alumina, only uniform erosion was observed in single crystalline sapphire. These specimens, however, had practically the same erosion depth, which results in the incorrectly similar plasma resistance. This implies that the plasma erosion resistance of ceramics should be evaluated in terms of the microstructural changes, as well as the conventionally accepted erosion depth.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1988-1990
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• 1996

In this work, we have grown or evaporated thermal oxide and E-beam oxide on the (100) oriented n-type silicon wafers, respectively and they were directly bonded with another silicon wafer after hydrophilization using solutions of three types of $HNO_3$, $H_{2}SO_{4}$ and $NH_{4}OH$. Changes of average surface roughness after hydrophilizations of the single crystalline silicon wafer, thermal oxide and E-beam evaporated silicon oxide were studied using atomic force microscope. Bonding interfaces of the bonded pairs were inspected using scanning electron microscope. Void and non-contact area of the bonded pairs were also inspected using infrared transmission microscope.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1943-1945
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• 1996

In this paper, we developed a modified direct bonding method for the application of vacuum devices. By the proposed method, we successfully bonded the following materials: Si-Si, Si-$SiO_2$-Si, glass-Si, and glass-$SiO_2$-Si. In our experiments, we used corning #7070 wafer type glass and (100) or (110) single crystalline silicon wafers. In order to enhance the initial bonding strength we contacted the materials to be bonded as D. I. water wetted on the surfaces and evaporated the water under the room temperature and atmosphere environment. Finally we realized the glass bonding by simple direct bonding method which has been performed by electrostatic bonding method until now.

• Journal of Korean Tunnelling and Underground Space Association
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• v.3 no.2
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• pp.33-56
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• 2001

It is well known fact that all rocks exhibit brittle properties and time depends strain properties (creep). An understanding of the time dependent deformation behaviour of rocks is believed to be essential in the field of civil and tunnelling. The rock and concrete creep in various forms of loading conditions and physical environment are reviewed. A comparison of creep behaviour between rocks and concrete is provided, in order to bring two existing relatively independent methods of predicting creep strain closer together. It was felt that the physical process in the creep of rocks would be similar to the process in creep of concrete. Since experiments and observations have shown that non-elastic (creep) mechanical behaviour of all crystalline solids (i.e., concrete, rocks, ceramics and refractories) and single materials have a common base. Also a comparison of the results for the accepted methods of estimating creep in rocks and concrete under - multiaxial loading was attempted to extend the knowledge of deformational characteristics of these two materials.