• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1101-1117
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• 2006

In the present article, recent progress of spray-wall interaction research has been reviewed. Studies on the spray-wall interaction phenomena can be categorized mainly into three groups: experiments on single drop impact and spray (multiple-drop) impingement, and development of comprehensive models. The criteria of wall-impingement regimes (i.e., stick, rebound, spread, splash, boiling induced breakup, breakup, and rebound with breakup) and the post-impingement characteristics (mostly for splash and rebound) are the main subjects of the single-drop impingement studies. Experimental studies on spray-wall impingement phenomena cover examination of the outline shape and internal structure of a spray after the wall impact. Various prediction models for the spray-wall impingement phenomena have been developed based on the experiments on the single drop impact and the spray impingement. In the present article, details on the wall-impingement criteria and post-impingement characteristics of single drops, external and internal structures of the spray after the wall impact, and their prediction models are reviewed.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.11a
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• pp.83-84
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• 2014

The whole wall system behaves as one section because single walls composing irregular wall are connected to each other. Although stress of a single wall is affected to the connected wall under lateral load, the stress is not transferred to whole sections and is concentrated on particular part of the wall as well. Therefore these walls can be divided into the effective and ineffective section. The purpose of this study is to compare design result of irregular wall using codes and previous studies on an effective width of the wall and to analyze reduction of the longitudinal bar of irregular wall.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.207-207
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• 2000

Multi- and single-wall carbon nanotubes are promising new carbon materials in nano-electronics, field-emitters, CRT-displays, hydrogen storage materials, biomedical tracers and so forth. The present talk will deal with a high-yield synthesis on quasi-aligned multi-wall carbon nanotubes via a chemical vapor deposition technique. I will also talk about a possible growth mechanism on single-wall carbon nanotubes based on newly obtained experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.71-72
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• 2006

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film. $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100). In the Hot Wall Epitaxy(HWE) system. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}K$, respectively.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.05a
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• pp.86-87
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• 2014

Recently, construction project has greatly increased the needs for cost savings due to excessive competition and economic recession. The purpose of this study is to introduce application of building using optimal design technique for improving constructability and economic efficiency of structural wall. As a results, design results of irregular wall show about 15% reduction of the longitudinal bar compared to single walls and ultimately improve constructability.

• Nuclear Engineering and Technology
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• v.55 no.12
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• pp.4317-4328
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• 2023

To ensure the measuring accuracy of the wall temperature, the outer wall temperature measurement values by using three kinds of thermocouple welding methods were analyzed and evaluated in the paper, including single-point flush-mounted in the wall groove method, single-point insert-mounted in the wall groove, and outer surface direct welding method, based on the application of a tube-in-tube condensing heat exchanger. And the impacts of silver, tin, and thermal resistance adhesive as filling materials on wall temperature measurement were also investigated, and the results were compared to that obtained without filling materials. The results showed that the wall temperatures measured by the three welding methods were lower than the theoretically calculated value. And the wall temperature measured by the outer surface direct welding method was lowest under the same experimental conditions. The wall temperatures measured by single-point flush-mounted and insert-mounted in the wall groove methods were also affected by different welding filling materials. It was found that the greater the thermal resistance of filling materials, the smaller the heat loss. By analyzing the reasons for the low measured value of wall temperature, a new wall temperature measurement method was developed to improve the accuracy of the current measurement method. Meanwhile, the outer wall temperature measurement experiments of vertical and horizontal heat transfer tubes were carried out to validate and calibrate the improved outer wall temperature measurement method. The results showed that the average outer wall temperature deviation measured by the improved wall temperature measurement method ranged from - 0.82% to +2.29% for vertical tubes and - 4.75% to - 1.44% for horizontal tubes, and the improved measurement method had good measurement accuracy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2003.04a
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• pp.227-234
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• 2003

In this study, an equivalent continuum model for single wall carbon nanotube is proposed. The model links interatomic potentials and atom structure of a materials to a constitutive model on the continuum level. The Young's modulus and shear modulus were predicted by the model. The predictions were in good agreement with the prior experimental results available in the literatures. Also, the strain energy of the carbon nanotube was predicted as a function of the radius of the carbon nanotube.

• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.33-37
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• 2021

In electrochemical glucose sensing, the enhancement of the sensitivity and the response time is essential in developing stable and reliable sensors, especially for continuous glucose monitoring. We developed a method to increase the sensitivity and to shorten the response time for the sensing upon the appropriate addition of single wall carbon nanotube onto the osmium polymer-based hydrogel electrode. Also, the background stabilization is dramatically enhanced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.