• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.273-280
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• 2002

The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.581-586
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• 2015

We studied optical and electrical properties of two-wavelength white tandem organic light-emitting diodes using red and blue materials. White fluorescent OLEDs were fabricated using Alq3 : Rubrene (3 vol.% 5 nm) / SH-1 : BD-2 (3 vol.% 25 nm) as emitting layer (EML). White single fluorescent OLED showed maximum current efficiency of 9.7 cd/A, and tandem fluorescent OLED showed 18.2 cd/A. Commission Internationale de l'Eclairage (CIE) coordinates of single and tandem fluorescent OLEDs was (0.385, 0.435), (0.442, 0.473) at $1,000cd/m^2$, respectively. White hybrid OLEDs were fabricated using SH-1 : BD-2 (3 vol.% 10 nm) / CBP : $Ir(mphmq)_2(acac)$ (2 vol.% 20 nm) as EML. White single hybrid OLED showed maximum current efficiency of 7.8 cd/A, and tandem hybrid OLED showed 26.4 cd/A. Maximum current efficiency of tandem hybrid OLED was more twice as high as single OLED. CIE coordinates of single hybrid OLED was (0.315, 0.333), and tandem hybrid OLED was (0.448, 0.363) at $1,000cd/m^2$. CIE coordinates in white tandem OLEDs compared to those for single OLEDs observed red shift. This work reveals that stacked white OLED showed current efficiency improvement and red shifted emission than single OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.79-80
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• 2007

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Acoustical Society of Korea Conference
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• 1984.12a
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• pp.33-35
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• 1984

A new type single beam photoacoustic spectrometer suitable for measuring optical absorption of condensed powder matter with the automatic calibration capability of a source power spectrum is introduced. The signal processing until of this spectrometer consists of a photoacoustic cell a lock-in amp., a switching circuit and a personal computer. The measured optical absorption spectra of a few material by this method are good agreement with the results obtained by the double-beam photoacoustic spectrometer.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.171-174
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• 1997

• Journal of the Korean Society of Radiology
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• v.14 no.3
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• pp.193-201
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• 2020

The purpose of this study is to evaluate the photon characteristics according to the material and thickness of the electrons incidented through a linear accelerator. The computer simulation design is a linear accelerator target consisting of a 2 mm thick tungsten single material and a 1.8 mm and 2.3 mm thick tungsten and copper composite material. In the research method, First, the behavior of primary particles in the target was evaluated by electron fluence and electron energy deposition. Second, photons occurring within the target were evaluated by photon fluence. Finally, the photon angle-energy distribution at a distance of 1 m from the target was evaluated by photon fluence. As a result, first, electrons, which are primary particles, were not released out of the target for electron fluence and energy deposition in the target of a single material and a composite material. Then, electrons were linearly attenuated negatively according to the target thickness. Second, it was found that the composite material target had a higher photon generation than the single material target. This confirmed that the material composition and thickness influences photon production. Finally, photon fluence according to the angular distribution required for shielding analysis was calculated. These results confirmed that the photon generation rate differed depending on the material and thickness of the linear accelerator target. Therefore, this study is necessary for designing and operating a linear accelerator use facility for container security screening that is being introduced in the country. In addition, it is thought that it can be used as basic data for radiation protection.

• Proceedings of the Safety Management and Science Conference
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• 2008.11a
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• pp.145-152
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• 2008

Single PPM Quality Innovation Movement is originally developed quality program in Korea for supplier's quality level-up since 1995. The quality target is below the 10ppm(parts per million) in outgoing quality and delivered goods plus field claim. This Single PPM Quality Innovation Movement program was conducted to realize the anticipated results not only due to management result level's increasing, but also the company's confidence and competitiveness. This study attempted to find the mutual influences on the participation of the constituent members, satisfaction of the constituent members and results of the management from Single PPM Quality Innovation Movement. The reliance analysis for the measurement material on the questionnaire was verified by Cronbach's alpha coefficient. Participation of the constituent members, satisfaction of the constituent member and result of the management, the influences upon Single PPM improvement degree level were verified through the structural analysis by using SPSS statistic package. The influence evaluation among the groups was evaluated by the structure equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.583-588
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• 2017

Thermal batteries are used in military power sources that require robustness and long storage life for applications in missiles and torpedoes. $FeS_2$ powder is currently used as a cathode material because of its high specific energy density, environmental non-toxicity, and low cost. $MS_2$ (M = Fe, Ni, Co) cathodes have been explored as novel candidates for thermal batteries in many studies; however, the discharge characteristics (1, 2, 3 plateau) of single cells in thermal batteries with different cathodes have not been elucidated in detail. In this study, we independently analyzed the discharge voltage and calculated the total polarizations of single cells using $MS_2$ cathodes. Based on the results of this study, we propose $NiS_2$ as a potential cathode material for use in thermal batteries.