• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• 한국결정학회지
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• 제14권1호
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• pp.24-24
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• 2003

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국표면공학회지
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• 제47권4호
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• pp.210-214
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• 2014

We investigated emission characteristics of tandem organic light emitting devices (OLEDs) with p-type materials as charge generation layer. The tandem OLEDs were fabricated by using $MoO_x$, $WO_x$, C60 and HATCN as p-type material or not using p-type material for charge generation. When HATCN was used as p-type material, it showed high current density at low applied voltage, but increase of efficiency was small because of charge unbalance in emitting layer. In case of tandem OLED not using p-type material, applied voltage increased remarkably because of difficulty of hole injection. In case of $MoO_x$, $WO_x$ or C60 as p-type material, current emission efficiency increased greatly. In particular, current emission efficiency of tandem OLED using $MoO_x$ as p-type material increased up to 3 times than current emission efficiency of single OLED. The Commission Internationale de l'Eclairage (CIE) 1931 color coordinates were changed by overlapping of 504 nm emission wavelength. As a result, emission efficiency of tandem OLED improved compared with single OLED, but driving voltage also increased by increase of organic layer thickness.

• Nano
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• 제13권12호
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• pp.1850149.1-1850149.10
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• 2018

Ferroelectric particles have been applied in the photocatalytic field because the spontaneous polarization results in the internal electric field, which can accelerate the separation and migration of photogenerated carriers. In this study, the $BaTiO_3$ (BT) fibers are synthesized by electrospinning. The BT fibers calcined above $800^{\circ}C$ exhibit a strong ferroelectric property, which is verified by a typical butterfly-shaped displacement-voltage loop. It is found that the BT fibers with the single-domain structure exhibit better photocatalytic performance than that with the multi-domain configuration. When the single-domain transforms into multi-domain, the integrated internal electric field correspondingly breaks up, inducing that the internal electric field might cancel each other out and diminish the separation of photogenerated carriers. Also, the Au nanoparticles can improve the photocatalytic activity further on account of the surface plasmon resonance. Therefore, it is suggested that Au nanoparticles decorated on ferroelectric BT nanomaterials are promising photocatalysts.

• 한국재료학회지
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• 제18권10호
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.17-17
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• 2009

Piezoelectric single crystals in the ternary MPB PMN-PZ-PT system with high $T_cs$ ($T_c$ > $200\sim300^{\circ}C$) and $E_cs$($E_c$>5~10 kV/cm) were fabricated by the cost-effective solid-state crystal growth (SSCG) technique. Chemically uniform PMN-PZT single crystals were successfully grown up to 60 mm by the SSCG method and their dielectric and piezoelectric properties characterized. Compared to Bridgman PMN-PT single crystals, the high $T_c/E_c$ PMN-PZT single crystals were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus become best candidates for medical transducers, actuators, and naval applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.312-313
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• 2008

A transflective liquid crystal displays associated with fringe field switching (FFS) mode of new concept is proposed. The device utilizes unique characteristic of the FFS mode in which the rotation angle of LC director is strongly dependent on electrode position in on state. We use the liquid crystal with negative dielectric anisotropy. Also we are look for optimized electrode size and the optimization of pixel electrode width and distance between them, the LC director could rotate about $22.5^{\circ}$ and $45^{\circ}$ depending on electrode positions. Consequently, we get high transmittance and high reflection on the optimized electrode condition. Respectively, a high image quality transflective display with single gap and single gamma characteristics realized.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.260-263
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• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.