• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Progress in Superconductivity
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• v.7 no.1
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• pp.6-10
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• 2005

We have studied feasibility of single-layer second-order $high-T_c$ SQUID gradiometers in magnetocardiography. We have measured human cardiomagnetic signals using a short-baseline (5.8 mm) single-layer second-order YBCO gradiometer in partially shielded environments. The gradiometer has an overall size of $17.6\;mm{\times}6\;mm$ and contains three parallel-connected pickup coils which are directly coupled to a step-edge junction SQUID. The gradiometer showed an unshielded gradient noise of $0.84\;pT/cm^2/Hz^{1/2}$ at 1 Hz, which corresponds to an equivalent field noise of $280\;fT/Hz^{1/2}$. The balancing factor was $10^3$. Based on the same design rules as the short-baseline devices, we have studied fabrication of 30 mm-long baseline gradiometers. The devices had an overall size of $70.2\;mm{\times}10.6\;mm$ with each pickup coil of $10\;mm{\times}10\;mm$ in outer size. As Josephson elements we made two types of submicron bridges, which are variable thickness bridge (VTB) and constant thickness bridge (CTB), from $3\;{\mu}m-wide$ and 300 nm-thick YBCO lines with a thin layer of Au on top by using a focused ion beam (FIB) patterning method. VTB was 300 nm wide, 200 nm thick, 30 nm long with Au removed and CTB 100 nm wide and 30 nm long. In temperature-dependent critical currents, $I_c(T)$, VTB showed an nonmetallic barrier-type behavior and CTB an SNS behavior. We believe that those characteristics are ascribed to naturally formed grain boundaries crossing the bridges.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.37-40
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• 2003

We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.304-310
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• 2002

Novel charge trap type memory devices with reoxidized oxynitride gate dielectrics made by NO annealing and reoxidation process of initial oxide on substrate have been fabricated using 0.35 $\mu \textrm{m}$ retrograde twin well CMOS process. The feasibility for application as NVSM memory device and characteristics of traps have been investigated. For the fabrication of gate dielectric, initial oxide layer was grown by wet oxidation at $800^{\circ}C$ and it was reoxidized by wet oxidation at $800^{\circ}C$ after NO annealing to form the nitride layer for charge trap region for 30 minutes at $850^{\circ}C$. The programming conditions are possible in 11 V, 500 $\mu \textrm{s}$ for program and -13 V, 1ms for erase operation. The maximum memory window is 2.28 V. The retention is over 20 years in program state and about 28 hours in erase state, and the endurance is over $3 \times 10^3$P/E cycles. The lateral distributions of interface trap density and memory trap density have been determined by the single junction charge pumping technique. The maximum interface trap density and memory trap density are $4.5 \times 10^{10} \textrm{cm}^2$ and $3.7\times 10^{18}/\textrm{cm}^3$ respectively. After $10^3$ P/E cycles, interlace trap density increases to $2.3\times 10^{12} \textrm{cm}^2$ but memory charges decreases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.559-569
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• 2012

In this paper, the X($1{\times}2$, 10.525 GHz) and K($3{\times}6$, 24.15 GHz) bands patch array antenna having single feed line for radar detector applications is proposed. The left side of the proposed array antenna is X band array antenna and the right is K band array antenna. Two array antennas with two stubs located in the front of antennas are fed through one transmission line. If the array antennas which have the different resonance frequency are fed by one transmission line using general T-junction, it interferes each other and the array antenna lost its character. Therefore, to prevent these interferences, two stubs using open and short property of stub are designed. First of all, the performances of array antenna weren't changed when each array antennas were connected with the stub and in the end, it is found out that it was the same when the two array antennas were combined and feed through the one transmission line. The measured gain at X band is 6.47 dBi and measured gain at K band is 13.07 dBi. The experimental results agree well with the simulated ones.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.6
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• pp.558-569
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• 2017

In this paper, a 256Kb EEPROM IP aimed at battery applications using a single supply of 1.5V which is embedded into an MCU is designed. In the conventional cross-coupled VPP (boosted voltage) charge pump using a body-potential biasing circuit, cross-coupled PMOS devices of 5V in it can be broken by the junction or gate oxide breakdown due to a high voltage of 8.53V applied to them in exiting the program or erase mode. Since each pumping node is precharged to the input voltage of the pumping stage at the same time that the output node is precharged to VDD in the cross-coupled charge pump, a high voltage of above 5.5V is prevented from being applied to them and thus the breakdown does not occur. Also, all erase, even program, odd program, and all program modes are supported to reduce the times of erasing and programming 256 kilo bits of cells. Furthermore, disturbance test time is also reduced since disturbance is applied to all the 256 kilo bits of EEPROM cells at once in the cell disturb test modes to reduce the cell disturbance testing time. Lastly, a CG driver with a short disable time to meet the cycle time of 40ns in the erase-verify-read mode is newly proposed.

• Journal of Food Hygiene and Safety
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• v.16 no.3
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• pp.212-220
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• 2001

To investigate the modifying effect of Kwao Kreu, Pueraria mirifica (PM), we performed two kind of studies which are the non-surgical medium-term carcinogenicity study and the modulation of gap junctional intercellular communication study. The first study, a non-surgical medium-term carcinogenicity bioassay was done to investigate the modifying effect of Kwao Keru, Pueyaria mirifca (PH), a rejuvenating folk medicine from Thailand, on the male F344 rat liver. Specific pathogen free, male 6-week-old F3444 rats were divided into ten groups. To induce hepatocarcinogenesis, those in all groups were given a single i.p. injection of DEN (200 mg/kg) and were received two i.p. injection of DGA (300 mg/kg) at the ends of weeks 2 and 5. Rats of group 3-6 were given sodium phenobarbital (PB 0.05% in drink). A diet containing 10 mg/kg PM was given to group 2 during the post-initiation phase and to groups 4 and 5 during promotion and initiation phase, respectively. Group 6 was given the experimental diet alone throughout the experiment (8 weeks). Rats of group 7, 8, 9 and 10 were fed 1000 mg/kg PH in the same manner as group 2, 4, 5 and 6. All animals were sacrificed at 8 weeks after DEN administration. Result of the immunohistochemical staining of the glutathione S-transferase placental form (GST-p) indicated that the numbers and areas of the preneoplastic leisions were not significantly changed in all PM treatment group comparing to control group. Also the numbers and areas of GST-p positive foci among group 7, 8, 9 and 10 were not significantly changed in comparing to control group. To study the effect of PM on the modulation of gap junctional intercellular communication, the present study was performed scrape-loading dye transfer (SL/DT) assay in human keratinocytes. The results showed that PM could not modulate GJIC. These results indicate that Pueraria mirifica may have no carcinogenic effects on experimental hepatocarcinogenesis in rats and gap junctional intercellular communication in human keratinocyte.

• Journal of Life Science
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• v.16 no.1
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• pp.37-43
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• 2006

Gap junction is an ion channel forming between adjacent cells. It also acts as a membrane channel like sodium or potassium channels in a single cell. The amino acid residues up to the $10^{th}$ position in the amino (N)-terminus of gap junction hemichannel affect gating polarity as well as current-voltage (I-V) relation. While wild-type Cx32 channel shows negative gating polarity and inwardly rectifying I-V relation, T8D channel in which threonine residue at $8^{th}$ position is replaced with negatively charged aspartate residue shows reverse gating polarity and linear I-V relation. It is still unclear whether these changes are resulted from the charge effect or the conformational change of the N-terminus. To clarify this issue, we made a mutant channel harboring cysteine residue at the $8^{th}$ position (T8C) and characterized its biophysical properties using substituted-cysteine accessibility method (SCAM). T8C channel shows negative gating polarity and inwardly rectifying I-V relation as wild-type channel does. This result indicates that the substitution of cysteine residue dose not perturb the original conformation of wild-type channel. To elucidate the charge effect two types of methaenthiosulfonate (MTS) reagents (negatively charged $MTSES^-$ and positively charged $MTSET^+$) were used. When $MTSES^-$ was applied, T8C channel behaved as T8D channel, showing positive gating polarity and linear I-V relation. This result indicates that the addition of a negative charge changes the biophysical properties of T8C channel. However, positively charged $MTSET^+$ maintained the main features of T8C channel as expected. It is likely that the addition of a charge by small MTS reagents does not distort the conformation of the N-terminus. Therefore, the opposite effects of $MTSES^-$ and $MTSETT^+$ on T8C channel suggest that the addition of a charge itself rather than the conformational change of the N-terminus changes gating polarity and I-V relation. Furthermore, the accessibility of MTS reagents to amino acid residues at the $8^{th}$ position supports the idea that the N-terminus of gap junction channel forms or lies in the aqueous pore.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.