• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• Journal of Power Electronics
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• v.8 no.1
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• pp.81-90
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• 2008

This paper presents an investigation of a voltage and frequency controller for an isolated asynchronous generator (IAG) driven. by a wind turbine and supplying 3-phase 4-wire loads to the isolated areas where a grid is not accessible. The control strategy is based on the indirect current control of the VSC (voltage source converter) using the frequency PI controller. The proposed controller consists of three single-phase IGBT (Insulated Gate Bipolar Junction Transistor) based VSC, which are connected to each phase of the IAG through three single phase transformers and a battery at their DC link. The controller has the capability of controlling reactive and active powers to regulate the magnitude and frequency of the generated voltage, harmonic elimination, load balancing and neutral current compensation. The proposed isolated system is modeled and simulated in MATLAB using Simulink and PSB (Power System Block-set) toolboxes to verify the performance of the controller.

• Progress in Superconductivity
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• v.5 no.1
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• pp.9-12
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• 2003

We observed the splitting of the fluxon-flow branches in the current-voltage characteristics of serially stacked intrinsic Josephson junctions (IJJs) formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8＋x}$ single crystals in the long-junction limit. Stacks of IJJs were sandwiched between two Au electrodes deposited on the top and the bottom of the stack using the ‘double-side cleaving technique’. In all the samples studied, the branch splitting started occurring for a dense fluxon configuration around 2 T and became more distinct in a higher magnetic field range. This observation can be explained in terms of switching between different Josephson fluxon modes in resonance with the collective plasma oscillations induced by both inductive and capacitive coupling between stacked IJJs. This is the first detailed and quantitative identification of the coherent flux-flow modes in stacked..

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1829-1834
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• 2008

An optical switch/modulator is designed and the light propagating characteristics is analyzed by the simplified BPM. The distinctive feature of the switch/modulator is that all the waveguide branches are designed to be single-mode. Principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of all the waveguides are designed to be single-mode, adjusting the interconnecting waveguide length of the device, the same characteristics as existing device up to date is obtainable. Numerical results show that the switching characteristics periodically depends on the interconnecting waveguide length with a spatial of about 150${\mu}m$ in the Ti:LiNbO3 step index waveguide. The concept of design would be utilized effectively in fabricating the monolithic high density of optical integrated circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• Journal of the Korean Chemical Society
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• v.59 no.2
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• pp.132-135
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• 2015

Bonding force and stiffness in amine-linked single-molecule junctions for Ag electrodes were measured using a home-built conducting atomic force microscope under ambient conditions at room temperature. For comparison, Au electrodes were used to measure the rupture force and stiffness of the molecular junctions. The traces of the force along with the conductance showed a characteristic saw-tooth pattern owing to the breaking of the metal atomic contacts or the metal-molecule- metal junctions. We found the rupture force and stiffness for Ag are smaller than those for Au electrodes. Furthermore, we observed that the force required to break the amine-Ag bond in the conjugated molecule, 1,4-benzenediamine, is smaller than in 1,4-butanediamine which is fully saturated. These results consist with the previous theoretical calculations for the binding energies of the nitrogen bonded to Ag or Au atoms.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2625-2630
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• 2008

Horseshoe vortices are formed at the junction of an object immersed in fluid-flow and endwall plate as a result of three-dimensional boundary layer separation. This study shows preliminary results of the kinematics of such horseshoe vortices around a circular cylinder with a cavity (slot) placed upstream to disturb the primary separation line. Through the cavity, no mass flow addition (blowing) or reduction (suction) is applied. The upstream cavity weakens the adverse pressure gradient before the cavity. With the upstream cavity, a single vortex is found to form immediately upstream of the cylinder whereas a typical two vortex system is observed in the absence of the cavity. Furthermore, the strength of the single vortex tends to be reduced, resulting from the interaction with the separated flow convecting directly towards the leading edge of the cylinder.

• Progress in Superconductivity
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• v.5 no.1
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• pp.1-4
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• 2003

A five-year project for Nb-based single flux quantum (SFQ) circuits supported by Japan's Ministry of Economy Trade and Industry (METI) in Japan was started in September 2002. Since April 2003, the New Energy and Industrial Technology Development Organization (NEDO) has supported this Superconductor Network Device Project. The aim of the project is to improve the integration level of Nb-based SFQ circuits to several ten thousand Josephson junctions, in comparison with their starting integration level of only a few thousand junctions. Actual targets are a 20 GHz dual processor module for the servers and a 0.96 Tbps switch module for the routers. Starting in April 2003, the Nb project was merged with SFQ circuit research using a high-T$_{c}$ superconductor (HTS). The HTS research targets are a wide-band AD converter for mobile-phone base stations and a sampling oscilloscope for wide-band waveform measurements.

• Progress in Superconductivity
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• v.2 no.2
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• pp.65-70
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• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..