• 한국지구물리탐사학회:학술대회논문집
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• 2003.11a
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• pp.78-82
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• 2003

In this paper, simulated annealing technique was used to estimate the rock joint characteristics, RMR(rock mass rating) values, to overcome the defects of ordinary kriging. Ordinary kriging reduced the variance of data, so lost the characteristics of distribution. Simulated annealing technique could reflect the distribution feature and the spatial correlation of the original data. Through the comparisons between three times simulations, the uncertainty of the simulation could be quantified, and sufficient results were obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.23-28
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• 2023

This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.46-55
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• 1998

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

• Journal of Korea Multimedia Society
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• v.9 no.1
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• pp.119-126
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• 2006

The task scheduling in multiprocessor system is one of the key elements in the effective utilization of multiprocessor systems. The optimal assignment of tasks to multiprocessor is, in almost practical cases, an NP-hard problem. Consequently algorithms based on various modern heuristics have been proposed for practical reason. This paper proposes a new task scheduling algorithm using Genetic Algorithm which combines simulated annealing (GA+SA) in multiprocessor environment. In solution algorithms, the Genetic Algorithm (GA) and the simulated annealing (SA) are cooperatively used. In this method, the convergence of GA is improved by introducing the probability of SA as the criterion for acceptance of new trial solution. The objective of proposed scheduling algorithm is to minimize makespan. The effectiveness of the proposed algorithm is shown through simulation studies. In simulation studies, the result of proposed algorithm is better than that of any other algorithms.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.616-619
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• 1996

This paper presents the configuration methodology of Distributed Control System(DCS)s for process plant and their performance evaluation. Performance evaluation is specified both in terms of operational and installation aspects of system. In order to evaluate performance criteria of operational aspect, a simulation method is proposed. Modeling of system components including process computer, database, process controllers and LANs, etc, is implemented for simulation. Based on these characteristics, different system configurations are evaluated and compared through results about evaluation criteria in order to select the best DCS for particular process. The results, in abbreviated form, of the performance evaluation of DCS controlling a CAL(Continuous Annealing Line) plant of iron process are presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.289-300
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• 2002

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.256-256
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• 2000

In this parer, we present a real-time path planning algorithm which is integrated the artificial potential field(APF) and simulated annealing(SA) methods for mobile robot. The APF method in path planning has gained popularity since 1990's. It doesn't need the modeling of the complex configuration space of robot, and is easy to apply the path planning with simple computation. However, there is a major problem with APF method. It is the formation of local minima that can trap the robot before reaching its goal. So, to provide local minima recovery, we apply the SA method. The effectiveness of the proposed algorithm is verified through simulation.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.140-140
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• 2000

Traditional genetic algorithms, though robust, are generally not the most successful optimization algorithm on any particular domain. Hybridizing a genetic algorithm with other algorithms can produce better performance than both the genetic algorithm and the other algorithms. In this paper, we use random process and simulated annealing instead of mutation operator in order to get well tuned fuzzy rules. The key of this approach is to adjust both the width and the center of membership functions so that the tuned rule-based fuzzy controller can generate the desired performance. The effectiveness of the proposed algorithm is verified by computer simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.376-376
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• 2012

본 연구는 Poly-Si에 이온 주입된 Boron의 Activation 거동을 연구하고자 SLS (Sequential Lateral Solidification) Poly-Si과 ELA (Excimer Laser Annealing) Poly-Si의 활성화 거동을 비교 분석하였다. SLS 및 ELA 결정화 방법으로 제조된 Poly-Si을 모재로 비 질량 분리 방식의 ISD (Ion Shower Doping) System을 사용하여 2.5~7.0 kV까지 이온주입 하였다. 이온주입 후 두 가지의 열처리 방법, 즉, FA 열처리(Furnace Annealing)와 RTA 열처리(Rapid Thermal Annealing)를 사용하여 도펀트 활성화 열처리를 수행하고 이온주입 조건 및 활성화 열처리 방법에 따른 결함 회복 및 도펀트 활성화 거동의 변화를 관찰하였다. TRIM-code Simulation 결과 가속 이온 에너지와 조사량이 증가 할수록 이온주입 시 발생하는 결함의 양이 증가하는 것을 정량적으로 계산하였다. 실험 결과 결함의 양이 증가 할수록 Activation이 잘되는 것을 관찰할 수 있었다. SLS Poly-Si에 비하여 ELA Poly-Si의 경우 도펀트 활성화 열처리 후 활성화 효율이 높게 나타났다. 본 결과는 Grain Boundary의 역할과 밀접한 관계가 있으며 간단한 정성적인 Model을 제시하였다. 활성화 효율의 경우 RTA 열처리 시편이 FA 시편에 비하여 높은 것이 관찰되었다. 본 결과는 열처리 온도 및 시간에 따라 변화하는 Boron의 특이한 활성화 거동인 Reverse Annealing 효과에 기인하는 것으로 규명되었다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.5C
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• pp.468-475
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• 2003

In this Paper, we design an optimal binary phase computer generated hologram for Pattern generation using combined genetic algorithm and simulated annealing algorithm together. To design an optimal binary phase computer generated hologram, in searching process of the proposed method, the simple genetic algorithm is used to get an initial random transmittance function of simulated annealing algorithm. Computer simulation shows that the proposed algorithm has better performance than the genetic algorithm or simulated annealing algorithm of terms of diffraction efficiency