• 한국진공학회지
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• 제10권3호
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• pp.328-334
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• 2001

초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 NO/$N_2$O 질화산화막 및 재산화질화산화막의 특성을 D-SIMS(dynamic secondary ion mass spectrometry), ToF-SIMS(time-of-flight secondary ion mass spectrometry), XPS(x-ray Photoelectron spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2$O 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록 하였다. D-SIMS 분석결과 질소의 중심은 초기산화막 계면에 존재하며 열처리 공정에서 NO에 비해서 $N_2$O의 경우 질소의 분포는 넓게 나타났다. 질화산화막내 존재하는 질소의 상태를 조사하기 위하여 ToF-SIMS 및 XPS 분석을 수행한 결과 SiON, $Si_2$NO의 결합이 주도적이며 D-SIMS에서 조사된 질소의 중심은 SiON 결합에 기인한 것으로 예상된다. 재산화막/실리콘 계면근처에 존재하는 질소는 $Si_2$NO 결합형태로 나타나며 이는 ToF-SIMS로 얻은 SiN 및 $Si_2$NO 결합종의 분포와 일치하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.230.1-230.1
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• 2015

One of the major problems of biological ToF-SIMS imaging is the lack of protein and peptide imaging. Most of biological story telling is mianly based on proteins. The biological implication of lipid ToF-SIMS imaging would be much higher if protein imaging is provided together. Utilizing high secondary ion yields of metals, proteins can be ToF-SIMS imaged with nanoparticle tagged proteins. Nanoparticles such as Fe3O4, SiO2, PbS were used for imaing NeuN, MCH, Orexin A, ${\alpha}$ synucline, TH(Tryosine Hydroxylase) in mouse tissues with a spatial resolution of ${\sim}2{\mu}m$ using a TOF-SIMS. Lipids and neurotransmitters images obtained simultaneously with protein images were overlayed for more deeper understanding of neurobiology, which is not allowed by any other bioimaging technqiues. The protein images from TOF-SIMS were compared with confocal fluorescence microscopy and NanoSIMS images. A new sample preparation method for imaging single cell membranes in a tissue using the vibrotome technique to prepare a tissue slice without any fixation and freeze drying will be also presented briefly for Hippocampus and Hypothalamus tissues.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.275-275
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• 2012

The relative composition of $Cu(InGa)Se_2$ solar cells is one of the most important measurement issues. However, quantitative analysis of multi-component alloy films is difficult by surface analysis methods due to severe matrix effect. In this study, quantitative depth profiling analysis of CIGS films was investigated by secondary ion mass spectrometry (SIMS). The compositions were measured by SIMS using the alloy reference relative sensitivity factors derived from the certified compositions and the total counting numbers of each element. The compositions measured by SIMS were linearly proportional to those by inductively coupled plasma-mass spectrometry (ICP-MS) using isotope dilution method. In this study, the quantification measured by ICP-MS method is compared with the composition calculated by SIMS depth profiles with AR-RSFs obtained from the reference. The SIMS depth profile of CIGS thin films according to the manufacturing condition was converted into compositional depth profile.

• 산업경영시스템학회지
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• 제28권3호
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• pp.42-57
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• 2005

The National Education Information System(NEIS) has been utilized in primary and secondary schools. In this paper, we consider the NEIS should be used not only for educational administration affairs, but also for a lifelong management of national human resource. The current School Information Management System(SIMS), including the NEIS, is unsatisfactory due to the insufficiency of actual field suitability and end-user's conveniency. To this, we have devised improvements of the SIMS in the seven problem areas: ) The core business process of the school should be analyzed sufficiently and reflected in SIMS. (2) We should fully utilize groupware functions which activate the learning organization. (3) We might apply and use the CRM techniques of enterprises in SIMS. (4) The SIMS should be easy to make necessary school assessment data. (5) We should complement functions of the SIMS for a lifelong healthcare information management of national human resource. (6) The SIMS should support the school lunch management. (7) We should bring BOM and work-flow concepts into the SIMS.

• 한국진공학회지
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• 제10권2호
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• pp.225-233
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• 2001

Oxygen flooding을 이용한 Secondary ion Mass Spectrometry(SIMS) 분석에 있어서 표면에 산화막이 있을 때 발생하는 SIMS depth profile의 왜곡현상에 대한 원인을 분석하고 이를 보정하였다. 이러한 왜곡현상은 표면 산화막에서와 Si 매질에서의 sputter rate이 다른 데서 발생하는 깊이 보정 오류와 상대감도인자(relative sensitivity factor, RSF)가 다른 데서 발생하는 농도보정 오류로부터 발생됨이 밝혀졌다. 깊이보정 오류를 바로잡기 위하여 $N^a+$ 이온을 산화막과 Si 매질의 계면에 대한 marker로 사용하였으며 산화막 두께는 SEM 및 XPS로 측정하였다. 산화막과 Si 매질에서의 sputter rate 및 RSF의 차이는 주로 oxygen flooding이 유발한 산화막 형성시의 부피팽창에 의한 것으로 해석되었으며 이를 보정한 depth profile은 oxygen flooding없이 분석한 경우와 거의 동일한 결과를 보여주었다.

• Mass Spectrometry Letters
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• 제12권2호
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• 한국진공학회지
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• 제13권2호
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• pp.79-85
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• 2004

본 논문은 구리와 탄탈 박막내에 불순물로써 함유되기 쉬운 수소와 탄소, 그리고 산소 원소에 대해 이차이온 질량분석기(secondary ion mass spectrometry)와 글로우방전 질량분석기(glow discharge mass spectrometry)를 이용하여 분석하였고, 이들의 분석결과에 대해서 고찰하였다. 구리와 탄탈 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V(구리 박막) 또는 -125 V(탄탈 박막)의 기판바이어스를 걸은 상태에서 증착하였다. 세슘 이온빔을 이용하여 분석한 SIMS 결과에서, 기판 바이어스를 걸지 않은 경우, 상당히 많은 피크들이 강하게 관찰되었는데 이는 위의 주요불순물들의 결합에 의한 상태로 검출된 것으로 이들 주요불순물들의 조합에 의해 가능한 질량번호를 산출하여 SIMS 결과의 모든 피크들을 해석할 수 있었다. 또한, 박막 내의 주요불순물들의 정량적인 GDMS 분석에 의해 SIMS 결과와의 일치성을 확인할 수 있었다.

• 대한공간정보학회지
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• 제1권2호
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• pp.131-141
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• 1993

본 논문에서는 선로시설 관리시스팀(TOMS)의 주요기능인 선로도면의 입출력 및 시설현황 통계보고서 작성 등의 기본적인 기능을 넘어서서 방대한 선로시설 데이타베이스의 효용성을 극대화시키고 단순한 시설관리 측면뿐만 아니라 가입자 서비스 증대를 목표로 선로시설과 가입자 정보를 통합적으로 관리할 수 있는 가입자시설 종합관리시스팀(SIMS)의 개발에 대해서 기술한다. SIMS가 제공하는 기능으로는 전화 가설용 공사명령서 제작, 외선자동선정, 케이블추적 및 구간별 유휴 심선 관리, 선전번 데이타 관리 및 통계보고서 작성, 가입자, 지번 정보관리 등이 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.