• 제목/요약/키워드: SimMechanics

검색결과 145건 처리시간 0.03초

SimMechanics를 이용한 4축 과구동 스테이지의 모델링 (Modeling of a 4-axis redundant stage by using SimMechanics)

  • 이진영;박원준;원종진;정재일
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.827-831
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    • 2008
  • In this paper, kinematic analysis for a planar 3-DOF redundant stage which has four actuators is presented by using SimMechanics software package. SimMechanics is a block sets of the Matlab/Simulink package. The SimMechanics enables a simplified model for a complex kinematic mechanism, since kinematic relationship between joints and linkages for the kinematic chains are expressed as line vectors and block diagrams. Here, positional error and limit values of movement ranges of the stage are evaluated by using the SimMechanics. The validity of the kinematic characteristics model was compared with theoretical kinematic analyses for the 3-DOF stage.

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Fluxless eutectic die bonding을 적용한 high power LED 패키지의 열저항 특성 (The Characteristics of Thermal Resistance for Fluxless Eutectic Die Bonding in High Power LED Package)

  • 신상현;최상현;김현호;이영기;최석문
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.303-304
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    • 2005
  • In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

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광대역 CMOS 저잡음 증폭기 설계 (Design of Ultra Wide-Band CMOS Low Noise Amplifier)

  • 문정호;정무일;김유신;이광두;박상규;한상민;김영환;이창석
    • 한국전자파학회논문지
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    • 제17권6호
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    • pp.597-604
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    • 2006
  • [ $3.1{\sim}5.15$ ] GHz 대역의 광대역 저잡음 증폭기를 새로운 입력 매칭 방식과 귀환회로 방식으로 구현하였다. 제안된 광대역 증폭기는 $0.18{\mu}m$ RF CMOS 공정을 사용하여 제작하였다. 측정된 값은 잡음지수가 $3.4{\sim}3.9$ dB, 전력 이득은 $12.8{\sim}14$ dB, 입력 매칭은 -9.4이고 입럭 IP3는 -1 dBm이고, 소비 전력은 14.5 mW이다.