• Title/Summary/Keyword: SimMechanics

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Modeling of a 4-axis redundant stage by using SimMechanics (SimMechanics를 이용한 4축 과구동 스테이지의 모델링)

  • Lee, Jin-Young;Park, Won-Jun;Won, Chong-Jin;Jeong, Jay-I.
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.827-831
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    • 2008

  • In this paper, kinematic analysis for a planar 3-DOF redundant stage which has four actuators is presented by using SimMechanics software package. SimMechanics is a block sets of the Matlab/Simulink package. The SimMechanics enables a simplified model for a complex kinematic mechanism, since kinematic relationship between joints and linkages for the kinematic chains are expressed as line vectors and block diagrams. Here, positional error and limit values of movement ranges of the stage are evaluated by using the SimMechanics. The validity of the kinematic characteristics model was compared with theoretical kinematic analyses for the 3-DOF stage.

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The Characteristics of Thermal Resistance for Fluxless Eutectic Die Bonding in High Power LED Package (Fluxless eutectic die bonding을 적용한 high power LED 패키지의 열저항 특성)

  • Shin, Sang-Hyun;Choi, Sang-Hyun;Kim, Hyun-Ho;Lee, Young-Gi;Choi, Suk-Moon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.303-304
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    • 2005

  • In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

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Design of Ultra Wide-Band CMOS Low Noise Amplifier (광대역 CMOS 저잡음 증폭기 설계)

  • Moon Jeong-Ho;Jeong Moo-Il;Kim Yu-Sin;Lee Kwang-Du;Park Sang-Gyu;Han Sang-Min;Kim Young-Hwan;Lee Chang-Seok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.6 s.109
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    • pp.597-604
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    • 2006

  • An ultrawideband(UWB) $3.1{\sim}5.15$ GHz low-noise amplifier employing a novel input matching circuit and feedback topology are presented. The proposed UWB amplifier is Implemented in $0.18{\mu}m$ RF CMOS technology. Measurements show a NF of $3.4{\sim}3.9$ dB, a power gain of $12.8{\sim}14$ dB, better than -9.4 of input matching and, an input IP3 of -1 dBm, while comsuming only 14.5 mW of power.

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