• 한국태양에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.350-355
• /
• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.431-432
• /
• 2007

In this study, we used screen printing on the rear glass with silver electrodes, phosphor and a dielectric which is on the silver electrodes, and carried out firing in the temperature of $550^{\circ}C$, $570^{\circ}C$, $450^{\circ}C$ each. To seal the rear and top glass together, we used crystalline frit paste as a sealing material with dispenser and carried out firing up to $450^{\circ}C$. As using this panel, we focused on optimizing the condition which influences characteristics of discharging by the distance between electrodes, electrode structure, type and pressure of gases for FFL.

• Bulletin of the Korean Chemical Society
• /
• v.11 no.3
• /
• pp.200-205
• /
• 1990

Chemically modified electrodes(CMEs), based on 2-imino-1-cyclopentane-dithiocarboxylic acid (icdc) containing carbon paste, have been characterized using cyclic voltammetric techniques. Ag(I) was chemically deposited on the CMEs, and voltammograms were obtained with the electrode in a separate buffer solution. The CME surface can be regenerated with exposure to acid and reused for deposition. In 10 deposition/measurement/regenerate cycles, the linear response have been reproduced up to $1{\times}10^{-6}$ M in linear sweep voltammetry and 1${\times}$10-8 M in differential pulse voltammetry with relative standard deviation of 5.2% and 12.4%, respectiveiy. The sensitivity increased with deposition time and scanning rate, and detection limit was $1{\times}10^{-7}M\;and\;1{\times}10^{-9}M$ at 20 minutes deposition in the linear sweep voltammetry and differential pulse voltammetry, respectively. The presence of some metal ions does not influence the silver ion response. Satisfactory results were obtained for the analysis of the silver ion for a variety of reference materials without interference of Hg ion at the condition of pH = 5-6.

• Journal of the Korean Chemical Society
• /
• v.35 no.5
• /
• pp.545-552
• /
• 1991

A mercury ion-sensitive carbon-paste electrode (CPE) was constructed with l-sparteine. Mercury (II) ion was chemically deposited by the complexation with l-sparteine onto the CPE. The surface of CPEs was characterized by cyclic voltammetry and anodic stripping voltammetry in an acetate buffer solution, separately. Exposure of CPEs to acid solution could regenerate surface and reuse it for deposition. In 5 deposition/measurement/regeneration cycle, the response was reproducible and in licnear up to $2.0\;{\times}\;10^{-6}$ M with linear sweep voltammetry. In case of using the differential pulse technique, we have obtained the linear response up to $7.0 {\times}10^{-7}$ M with relative standard deviation of ${\pm}5.1$%. The detection limit was $5.0{\times}10^{-7}$ M for 20 minutes of the deposition. We have investigated the interference effect of various metal ions, which are expected to form the complex with ligand. Silver (I) ion of these has interfered with the analysis of Hg (II) ions. However, pretreatment of the silver (I) ion with potassium chloride led to no interference on the analysis of mercury ions in aqueous solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.21-21
• /
• 2009

후막 광식각 기술을 이용하여 형성된 Ag 전극과 LTCC 기판 사이의 접착력을 향상시키기 위하여 무기 바인더로서 anorthite, diopside 및 MLS-62 glass frit을 첨가하여 감광성 Ag paste를 제조하였다. 소성 후의 glass pool effect를 감소시키기 위해 attrition mill을 통하여 미세 glass 분말을 준비하였다. Glass frit은 Ag powder의 5vol%~25vol%의 함량으로 첨가하여 감광성 Ag paste를 제조하였고 패턴 형성 후 $850^{\circ}C$에서 1시간 소결하였다. 전극과 기판 사이의 접착력은 micro-ball shear test 법으로 측정하였으며, Ag 전극 부착력은 glass frit의 함량 증가에 따라 증가하다가 감소하는 경향을 보이는데, 이는 과량의 glass frit 첨가로 인한 전극 내부에 액상 풀의 형성에 기인한 것으로 보여진다. Ag 전극의 면저항은 glass frit의 함량이 증가함에 따라 $0.13m{\Omega}{/\square}$에서 $2.06m{\Omega}{/\square}$까지 증가하는 경향을 나타내었다. 소성 전후의 전극 패턴의-수축율은 $100{\mu}m$의 선폭을 기준으로 glass frit의 첨가랑이 증가할수록 43.3%에서 35.0%로 감소하였으며, 그 결과 최소 선폭 $25{\mu}m$의 미세 전극 패턴의 형성이 가능하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.12
• /
• pp.1010-1017
• /
• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.509-516
• /
• 2008

Multi-layer circuit card for semiconductor inspection was fabricated by LTCC technology. After a proper impedance design without electrical interference, ceramic tapes with the composition of $CaO-Al_2O_3-SiO_2-B_2O_3$ glass and $Al_2O_3$ were prepared. The electrode with silver paste printed on the tape. Printed ceramic sheets were then laminated and sintered. Densities and dielectric properties were measured. The microstructure, fracture surface of the region of via and matching state of substrate-electrode were observed. The durability of plated outside electrode were examined by hardness and scratch test.

• Proceedings of the KAIS Fall Conference
• /
• 2012.05b
• /
• pp.712-715
• /
• 2012

본 논문에서는 EM 시뮬레이터를 이용하여 LTE2300 대역의 마이크로스트립 라인 대역여파기를 설계하고 시편을 제작하였다. 중심주파수 2300MHz, 대역폭 350MHz, 삽입손실 1.5dB, 감쇄는 1930MHz와 2690MHz에서 15dB 이상, 1000MHz에서 60dB 이상으로 설계하였다. 또한 반사손실은 15dB로 설계하였다. 구현은 유전율 9.8인 알루미나 유전체에서 하였으며, 전송선로와 접지는 silver paste를 사용하였다. EM 시뮬레이션을 통해 얻은 결과값과 이를 통해 실제 제작된 시편의 보정값을 얻어 data base화 하였으며, 좋은 재현성을 얻을 수 있음을 확인하였다. 특히 일반적으로 마이크로스트립 라인 필터의 제작에 적용되는 에칭 또는 포토리소그라피 대신 레이저를 이용하여 패턴을 구현하였으며, 이 또한 우수한 특성과 재현성을 보여주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.303-306
• /
• 1998

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show powder electroluminescent device (PELD) for high brightness compared with conventional PELD. Single layer of PELD structured as follow (ITO/phosphor + dielectric/silver paste). To investigate optical properties of PELDS, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in single layer of PELD was 7:3(phosphor: dielectric). At 200 V4OO Hz, high performance of PELD which had ratio of 7:3

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1993.11a
• /
• pp.35-38
• /
• 1993

SCLD(supercondocting current 1imiting device) with YBaCuO superconductor was fabricated by the sol-gel and the doctor-blade method. Critical current density ($J_{c}$) and critical current ($I_{c}$) of the SCLD are 100.27 A/$cm^2$and 1A at 77K and the electrodes contact with SCLD by silver paste. The SCL was connected with test circuit in series. When apple iud current exceed critical current value of the SCLD in testing circuit, the SCLD ristricts the over current by generating resistance itself without delay. Resistance of SCLD increase lineary 0 to 1.6$\Omega$ in propotion to applied current above the critical current $I_{c}$.