• Transactions of Materials Processing
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• v.12 no.7
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• pp.623-630
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• 2003

Nanomachining process, static nanoplowing, is one of the most promising lithographic technologies in terms of the low cost of operation and variety of workable materials. In nanomachining process, chemical effects are more dominant factor compared with those by physical deformation or fracture. For example, during the nanoscratch on a silicon surface in the atmosphere, micro protuberances are formed due to the mechanochemical reaction between diamond tip and the surfaces. On the contrary, in case of chemically stable materials, such as ceramic or glass, surface protuberances are not formed. The purpose of this study is to understand effects of the mechanochemical reaction between tip and surfaces on deformation behaviors of hard-brittle materials. Nanometerscale elasoplastic deformation behavior of single crystal silicon (100) was characterized with micro protuberance phenomena, and compared with that of borosilicate (Pyrex glass 7740). In addition, effects of the silicon protuberances on nanoscratch test results were discussed.

• Tribology and Lubricants
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• v.16 no.4
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• pp.282-288
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• 2000

A sliding friction and wear test for silicon nitride (Si,N4) was conducted using a ball-on-disk specimen configuration. The material used in this study was HIPed silicon nitride. The tests were carried out from room temperature to 1000$^{\circ}C$ using self-mated silicon nitride couples in laboratory air. The worn surfaces were observed by SEM and the debris particles from the worn surfaces were analyzed for oxidation by XPS. The normal load was found to have a more significant influence on the friction coefficient of the silicon nitride than an elevated temperature. The specific wear rate was found to decrease along with the sliding distance. The specific wear rate at 29.4 N and 1000$^{\circ}C$ was 292 times larger than that at room temperature. The main wear mechanism from room temperature to 750$^{\circ}C$ was caused by brittle fracture whereas from 750$^{\circ}C$ to 1000$^{\circ}C$ the wear mechanism was mainly influenced by the oxidation of silicon nitride due to the increased temperature. The oxidation of silicon nitride at a high temperature was a significant factor in the wear increase.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1528-1530
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• 1997

As device size shrinks, contamination will increasingly affect the reliability and yield of device. Therefore, contaminants must be removed from the surfaces of Si wafers prior to each process. But it becomes out increasingly difficult to clean silicon surfaces with finer patterns by the conventional wet treatment because of the viscosity and surface tension of solutions. Hence, a damage less dry cleaning process is needed for the silicon surfaces. For the removal of Si native oxide by UV-enhanced dry cleaning. $F_2$ gas and $F_2/H_2$ mixed gas were applied. As a result of analysis, UV-enhnaced $F_2/H_2$ treatment is more suitable than UV-enhanced $F_2$ treatment for removal of native oxide on the surfaces of Si wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.172-176
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• 1995

Schemes to trap weakly absorbed light into the cell have played an important role in improving the efficiency of both amorphous and crystlline silicon solar cells. One class of scheme relies on randomizing the direction of light within the cell by use of Lambertian(diffuse)surfaces. A second class of scheme relies on the use fo well defined geometrical features to control the direction of light wihin the cell, Widly used geometrical features in crystalline silicon solar cells are the square based pyramids and V-shaped grooves formed in (100) orientated surfaces by intersecting(III) crystallographic planes exposed by anisotropic etching. 18.5% conversion efficiency of Buried Contact Solar Cell with pyramidally textured surface has been achieved. 18.5% efficiency of silicon solar cell is one the highest record in the world The efficieny of cell without textured surface was 16.6%, When adapting textured surface to the Cell, the efficiency has been improved over 12%.

• Journal of Photoscience
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• v.12 no.3
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• pp.171-174
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• 2005

The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.13-17
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• 2014

Since the semiconductor manufacturing requires the silicon wafers with extraordinary degree of surface flatness, the surface polishing of wafers from ingot cutting is an important process for deciding surface quality of wafers. The present study introduces the development of wafer polishing equipment and, especially, the wafer polishing head that employs the forced self-driving of installed silicon wafer as well as the wax wafer mounting technique. A series of wafer polishing tests have been carried out to investigate the effects of self-driving function in wafer polishing head. The test results for wafer planarization showed that the LLS counts and SBIR of polished wafer surfaces were generally improved by adopting the self-driven polishing head in wafer polishing stations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.364-365
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• 2005

This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.1
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• pp.47-52
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• 2008

We present a 3-D profiler specially devised for the profile measurement of rough surfaces that are difficult to be measured with conventional non-contact interferometer. The profiler comprises multiple two-point-diffraction sources made of single-mode optical fibers. Test measurement proves that the proposed profiler is well suited for the warpage inspection of microelectronics components with rough surface, such as unpolished backsides of silicon wafers and plastic molds of integrated-circuit chip package.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.433-434
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• 2002

Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the 'soft' pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.591-597
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• 2012

This paper presents regularly micro-textured glass surfaces ensuring the superhydrophobic properties in the Cassie-Baxter regime. The proposed surfaces were fabricated simply and efficiently by filling the glass material into a silicon micro-mold with periodic micro-cavities based on a thermal-reflow process, resulting in a successful demonstration of the textured glass surface with periodically-arrayed micro-pillar structures. The static and dynamic wetting properties of the micro-textured glass surfaces were characterized by measuring the static contact angle (SCA) and contact angle hysteresis (CAH), respectively. In addition, the surface wettability was estimated theoretically based on Wenzel and Cassie-Baxter wetting theories, and compared with the experimental ones. Through the experimental and theoretical observations, it was clearly confirmed that the proposed micro-textured glass surfaces showed the slippery superhydrophobic behaviors in the Cassie-Baxter wetting mode.