• Title/Summary/Keyword: Silicon surfaces

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Chemical Sensors Based on Distributed Bragg Reflector Porous Silicon Smart Particles

  • Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.8 no.1
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    • pp.67-74
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    • 2015
  • Sensing characteristics for porous smart particle based on DBR smart particles were reported. Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{++}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Three different surface-modified DBR smart particles have been prepared and used for sensing volatile organic vapors. For different types of surface-modified DBR smart particles, the shift of reflectivity mainly depends on the vapor pressure of analyte even though the surfaces of DBR smart particles are different. However huge difference in the shift of reflectivity depending on the different types of surface-modified DBR smart particles was obtained when the vapor pressures are quite similar which demonstrate a possible sensing application to specify the volatile organic vapors.

A study on the formation and removal of residue and damaged layer on the overched silicon surface during the contact oxide etching using $C_4$F$_8$/H$_2$ helicon were plasmas (C$_4$F$_8$/H$_2$ helicon were 플라즈마를 이용한 contact 산화막 식각 공정시 과식화된 실리콘 표면의 잔류막과 손상층 형성 및 이의 제거에 관항 연구)

  • 김현수;이원정;백종태;염근영
    • Journal of the Korean institute of surface engineering
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    • v.31 no.2
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    • pp.117-126
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    • 1998
  • In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

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Characteristics of Double Texturization by Laser and Reactive Ion Etching for Crystalline Silicon Solar Cell (레이저를 이용한 결정질 실리콘 태양전지의 Double Texturing 제조 및 특성)

  • Kwon, Jun-Young;Han, Kyu-Min;Choi, Sung-Jin;Song, Hee-Eun;Yoo, Jin-Soo;Yoo, Kwon-Jong;Kim, Nam-Soo
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.649-653
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    • 2010
  • In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.

Tribological Behavior of Mono- and Multilayer Coverings on Silicon Surface

  • Zhavnerko, G.K.;Ahn, Hyo-Sok;Ondarcuhu, T.;Chizhik, S.A.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.43-44
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    • 2002
  • Langmuir-Blodgett mono- and multilayer films from 2,4-heneicosanedione have been examined as lubrication coatings In the process of wear. Tribological properties of the films have been studied by atomic force microscopy and microtribometer. It has been observed that the wear resistance of silicon surface coated with OTS/LB multilayer system increased by several orders of magnitude compared to uncoated surfaces at low normal load. The results obtained suggest that the system constructed on silicon surface reduces surface energy, friction coefficient and increases life of substrate due to a possibility of LB film self-repairing during frictional contact.

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Fabrication of PDMS Mold by AFM Based Mechanical TNL Patterning (AFM기반 기계적 TNL 패터닝을 통한 PDMS 몰드제작)

  • Jung, Y.J.;Park, J.W.
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.5
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    • pp.831-836
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    • 2013
  • This study demonstrates the process of fabricating patterns using tribonanolithography (TNL),with laboratory-made micro polycrystalline diamond (PCD) tools that are attached to an atomic force microscope (AFM). The various patterns are easily fabricated using mechanical scratching, under various normal loads, using the PCD tool on single crystal silicon, which is the master mold for replication in this study. Then, polydimethylsiloxane (PDMS) replica molds are fabricated using precise pattern transfer processes. The transferred patterns show high dimensional accuracy as compared with those of TNL-processed silicon micro molds. TNL can reduce the need for high cost and complicated apparatuses required for conventional lithography methods. TNL shows great potential in that it allows for the rapid fabrication of duplicated patterns through simple mechanical micromachining on brittle sample surfaces.

Expanding Thermal Plasma CVD of Silicon Thin Films and Nano-Crystals: Fundamental Studies and Applications

  • Sanden, Richard Van De
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.78-78
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    • 2012
  • In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

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Micro-tribological Properties of Coated Silicon Wafer (코팅된 실리콘웨이퍼의 Microtribological 특성)

  • 차금환;김대은
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1998.04a
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    • pp.91-96
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    • 1998
  • In recent years, the tribological behavior of coated ceramic material has been the topic of much interest. Particularly, the understanding of the tribological performance of thin film under light load is important for potential applications in MEMS. In this work under light load and low speed, the tribological behavior of coated silicon was investigated. The results show that both adhesive and abrasive wear occur depending on the sliding condition. Also the effect of humidity on friction was influenced by the apparent ares of contact between the two surfaces. Finally, undulations on the silicon wafer were found to be effective in trapping wear particles.

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Investigation of Micro-tribological Properties of Coated Silicon Wafer under Light Load (코팅된 실리콘웨이퍼의 미소 마찰마멸특성에 관한 연구)

  • 차금환;김대은
    • Tribology and Lubricants
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    • v.15 no.1
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    • pp.29-38
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    • 1999
  • In recent years, the tribological behavior of coated ceramic material has been the issue of much interest. Particularly, the understanding of the tribological performance of thin film under light load is important for its potential in applications of MEMS. The friction and wear behavior of ceramic material that occur at light load depends on several factors such as surface roughness, contact area and material properties. In this work, the tribological behavior of coated silicon under light load and low speed was investigated. Particularly, the effects of coated materials, humidity and undulated surface were also studied. The results show that the effect of humidity on fiction was influenced by the apparent area of contact between the two surfaces. Also both adhesive and abrasive wear occurred depending on the sliding condition. Finally, undulations on the silicon wafer were found to be effective in trapping wear particles and resulted in the reduction of friction.

Fabrication and Optical Characterization of Porous Silicon Nanowires (다공성 실리콘 나노선의 제작 및 광학적 특성 분석)

  • Kim, Jungkil;Choi, Suk-Ho
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.6
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    • pp.855-859
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    • 2012
  • Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

A Study on the Precision Machining Characteristics of Aluminium 7075 and Silicon using Ultra-precision Turning Machine (초정밀 선반을 사용한 알루미늄 7075와 실리콘의 초정밀가공 특성연구)

  • Kim, Woo-Kang;Kim, Kun-Hee;Won, Jong-Ho
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.5 no.4
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    • pp.27-32
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    • 2006
  • This study aims to find the optimal cutting conditions, when are nonferrous metals(aluminum and silicon) are machined with diamond tool of diamond turning machine. Diamond turning machine has been widely used in manufacturing optical reflectors of nonferrous metals. Such as aluminium and copper are easy to be machined because of their proper ductility. But optical crystals being discussed here are characterized by their high brittleness which makes it difficult to obtain high quality optical surfaces on them. The purpose of this study is to find the optimum machining conditions for ductile cutting of silicon and aluminium.

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