• Journal of Korean Ophthalmic Optics Society
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• v.19 no.1
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• pp.111-120
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• 2014

Purpose: This study was to investigate changes in the thickness of cornea, curvature of cornea, and aberration depending on the water contents, materials, and refractive power of contact lens. Methods: The differences in the corneal thickness between pre- and post-wearing the lenses were compared using 5 kinds of lenses. The changes in the corneal thickness, the curvatures of the anterior and posterior cornea, and high order aberration (HOA) before and after wearing the lenses were investigated at the center of the cornea, and the different distance and the direction away from the center of the cornea. For the equipments of measurement, ORB ScanII (Bausch & Lomb Inc, ver 3.14) was used to measure the corneal topography and thickness, and Zywave (Bausch & Lomb Inc, ver 5.20) was used to analyze the high order aberration. Results: Five (S1, S2, S3, T1, T2) of the lens was used for this study, excluding the lens T2 lens has four lenses and the thickness of the corneal shape, but the impact is minimal. In the case of the hydrogel soft contact lenses (T2 lens) with low oxygen permeability, the corneal thickness showed distinct increasing patterns. The high order aberration and coma aberration were most changed in the silicon hydrogel toric lens, while the depth of anterior was most changed in the hydrogel toric lens. Conclusion: Among the 5 kinds of contact lenses with different water contents, materials, and refractive power used for this study, the corneal shape change was small for the lenses with an oxygen permeability (Dk) of more than 28, and the largest for the lenses with a very low oxygen permeability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.11
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• pp.3260-3268
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• 2009

A test apparatus has been fabricated to simulate chemical effect on head loss through a strainer in a pressurized water reactor (PWR) containment water pool after a loss of coolant accident (LOCA). Tests were conducted under condition of same ratio of strainer surface area to water volume between the test appratus and the containment sump. A series of tests have been performed to investigate the effects of spray, existence of calcium-silicate with tri-sodium phosphate (TSP), and composition of materials. The results showed that head loss across the chemical bed with even a small amount of calcium-silicate insulation instantaneously increased as soon as TSP was added to the test solution. Also, the head loss across the test screen is strongly affected by spray duration and is increased rapidly at the early stage, because of high dissolution and precipitation of aluminum and zinc. After passivation of aluminum and zinc by corrosion, the head loss increase is much slowed down and is mainly induced by materials such as calcium, silicon, and magnesium leached from NUKONTM and concrete. Furthermore, it is newly found that the spay buffer agent, tri-sodium phosphate, to form protective coating on the aluminum surface and reduce aluminum leaching is not effective for a large amount of aluminum and a long spray.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.119-125
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• 1990

This paper describes fiber optic voltage sensor using EOM-BSO (Electro-Optic Modulator-Bismuth Silicon Oxcide). Transceiver has an electical/optical converter and an optical/electrical converter which consist of light emitting diode, PIN-PD, and electronic circuits. Multimode fiber cable of $100/140{\mu}m$ core/clad diameter is used for connecting the transceiver to fiber cable and fiber optic voltage sensor. Before our experiments, by applying the Maxwell equations and wave equations, We derive matrix equation on wave propagation in the BSO single crystal. And also we derive optimal equation on intensity modulation arising through an analyzer. According to experi-mental results, fiber optic voltage sensor has maximum $2.5{\%}$ error within the applied AC voltage of 800V. As the applied voltage increases, saturation values of voltage sensor also increase. This phenomenon is caused by optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optic voltage sensor in the temperature range from$-20^{\circ}C\to\60^{\circ}C$ are measured within ${\pm}0.6{\%}$. And frequency characteristics of the voltage sensor has good frequency characteristics from DC to 100kHz.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.17-24
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• 2021

Perovskite solar cells (PSCs) can be fabricated through solution process economically with variable bandgap that is controlled by composition of precursor solution. Tandem cells in which PSCs combined with silicon solar cells have potential to reach high power conversion efficiency over 30%, however, lack of long-term stability of PSCs is an obstacle to commercialization. Degradation of PSCs is mainly attributed to the mass transport of halide and metal electrode materials. In order to ensure the long-term stability, the mass transport should be inhibited. In this study, we confirmed degradation behaviors due to the mass transport in PSCs and designed buffer layers with LiF and/or SnO₂ to improve the long-term stability by suppressing the mass transport. Under high-temperature storage test at 85℃, PSCs without the buffer layers were degraded by forming PbI₂, AgI, and the delta phase of the perovskite material, while PSCs with the buffer layers showed improved stability with keeping the original phase of the perovskite. When the LiF buffer and encapsulation were applied to PSCs, superior long-term stability on 85℃-85% RH dump heat test was achieved; efficiency drop was not observed after 200 h. It was also confirmed that 90.6% of the initial efficiency was maintained after 200 hours of maximum power tracking test under AM 1.5G-1SUN illumination. Here, we have demonstrated that the buffer layer is essential to achieve long-term stability of PSCs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• The Journal of the Korea Contents Association
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• v.22 no.7
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• pp.55-62
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• 2022

The perovskite solar cell is an active part of research in renewable energy fields such as solar energy, wind, hydroelectric power, marine energy, bioenergy, and hydrogen energy to replace fossil fuels such as oil, coal, and natural gas, which will gradually disappear as power demand increases due to the increase in use of the Internet of Things and Virtual environments due to the 4th industrial revolution. The perovskite solar cell is a solar cell device using an organic-inorganic hybrid material having a perovskite structure, and has advantages of replacing existing silicon solar cells with high efficiency, low cost solutions, and low temperature processes. In order to optimize the light absorption layer thin film predicted by the existing empirical method, reliability must be verified through device characteristics evaluation. However, since it costs a lot to evaluate the characteristics of the light-absorbing layer thin film device, the number of tests is limited. In order to solve this problem, the development and applicability of a clear and valid model using machine learning or artificial intelligence model as an auxiliary means for optimizing the light absorption layer thin film are considered infinite. In this study, to estimate the light absorption layer thin-film optimization of perovskite solar cells, the regression models of the support vector machine's linear kernel, R.B.F kernel, polynomial kernel, and sigmoid kernel were compared to verify the accuracy difference for each kernel function.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.90-90
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• 2014

The Immersion Grating Infrared Spectrometer (IGRINS) is the first astronomical spectrograph that uses a silicon immersion grating as its dispersive element. IGRINS fully covers the H and K band atmospheric transmission windows in a single exposure. It is a compact high-resolution cross-dispersion spectrometer whose resolving power R is 40,000. An individual volume phase holographic grating serves as a secondary dispersing element for each of the H and K spectrograph arms. On the 2.7m Harlan J. Smith telescope at the McDonald Observatory, the slit size is $1^{{\prime}{\prime}}{\times}15^{{\prime}{\prime}}$. IGRINS has a plate scale of 0.27" pixel-1 on a $2048{\times}2048$ pixel Teledyne Scientific & Imaging HAWAII-2RG detector with a SIDECAR ASIC cryogenic controller. The instrument includes four subsystems; a calibration unit, an input relay optics module, a slit-viewing camera, and nearly identical H and K spectrograph modules. The use of a silicon immersion grating and a compact white pupil design allows the spectrograph collimated beam size to be 25mm, which permits the entire cryogenic system to be contained in a moderately sized ($0.96m{\times}0.6m{\times}0.38m$) rectangular Dewar. The fabrication and assembly of the optical and mechanical components were completed in 2013. From January to July of this year, we completed the system optical alignment and carried out commissioning observations on three runs to improve the efficiency of the instrument software and hardware. We describe the major design characteristics of the instrument including the system requirements and the technical strategy to meet them. We also present the instrumental performance test results derived from the commissioning runs at the McDonald Observatory.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.58.1-58.1
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• 2010

In solar cell module manufacturing, single solar cells has to be joined electrically to strings. Copper stripes coated with tin-silver-copper alloy are joined on screen printed silver of solar cells which is called busbar. The bus bar collects the electrons generated in solar cell and it is connected to the next cell in the conventional module manufacturing by a metal stringer using conventional hot air or infrared lamp soldering systems. For thin solar cells, both soldering methods have disadvantages, which heats up the whole cell to high temperatures. Because of the different thermal expansion coefficient, mechanical stresses are induced in the solar cell. Recently, the trend of solar cell is toward thinner thickness below 180um and thus the risk of breakage of solar cells is increasing. This has led to the demand for new joining processes with high productivity and reduced error rates. In our project, we have developed a new method to solder solar cells with a laser heating source. The soldering process using diode laser with wavelength of 980nm was examined. The diode laser used has a maximum power of 60W and a scanner system is used to solder dimension of 6" solar cell and the beam travel speed is optimized. For clamping copper stripe to solar cell, zirconia(ZrO)coated iron pin-spring system is used to clamp both joining parts during a scanner system is traveled. The hot plate temperature that solar cell is positioned during lasersoldering process is optimized. Also, conventional solder joints after $180^{\circ}C$ peel tests are compared to the laser soldering methods. Microstructures in welded zone shows that the diffusion zone between solar cell and metal stripes is better formed than inIR soldering method. It is analyzed that the laser solder joints show no damages to the silicon wafer and no cracks beneath the contact. Peel strength between 4N and 5N are measured, with much shorter joining time than IR solder joints and it is shown that the use of laser soldering reduced the degree of bending of solar cell much less than IR soldering.