• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.176-181
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• 2003

Rapid densification of a SiC powder with additive 0.5 wt% $B_4$C was conducted by spark plasma sintering (SPS). The unique features of the process are the possibilities of using very fast heating rate and short holding time to obtain fully dense materials. The heating rate and applied pressure were kept to be $100^{\circ}C$/min and 40 MPa, while sintering temperature and soaking time varied to 1800, 1850, 1900 and $1950^{\circ}C$ and 10, 20 and 30 min, respectively. All of the SPS-sintered specimens at $1950^{\circ}C$ reached near-theoretical density. The XRD found that 3C-to-6H transformation at $1850^{\circ}C$. The microstructures of the rapidly densified SiC ceramics consisted of duplex microstructure with ultrafine equiaxed grains under 2 $\mu\textrm{m}$ and elongated grains of 0.5∼2 $\mu\textrm{m}$ wide, length 3∼10 $\mu\textrm{m}$. The biaxial strength increased with the increase of sintering time. Strength of 392.7 MPa was obtained with the fully densified specimen sintered at $1950^{\circ}C$ for 30 min, in agreement with the general tendency that strength increases with decreases pore. On the other hand, the fracture toughness shows the value of 2.17∼2.34 MPa$.$$m^{1/2}$ which might be due to the transgranular fracture mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.203-209
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• 1999

LaAlO3d single phase used as the butter layer on Si wafer for YBa2Cu3O7-$\delta$ superconductor application were prepared by solid state reaction method and by self-sustaining combustion process. The microstructure and crystallity of synthesiszed LaAlO3 powder studied using scanning electron microscope (SEM) and X-ray diffractometer(XRD), specific surface area and sintering characteristics fo powder were investigated by Brunauer-Emmett-Teller (BET) method and dilatometer respectively. In solid state reaction method, it is difficult to obtain LaAlO3 single phase up to 150$0^{\circ}C$ period. However, in self-sustaining combustion process, it is to easy to do it only $650^{\circ}C$. Based on the results of analysis of dilatometer it is easier to obtain high sintering density (98.87%) in self-sustaining combustion process than in the solid state reaction method. This reason is that the average particle size prepared by self-sustaining combustion process is nano crystal size and has high specific surface are value(56.54 $m^2$/g) compared with that by solid state reaction method. Also, LaAlO3 layer on the Si wafer has been achieved by screen printing and sintering method. Even though the sintering temperature is 130$0^{\circ}C$, the phenomena of silicon out diffusion in LaAlO3/Si interphase are not observed.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1170-1175
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• 1999

The microstructures and mechanical properties of $Si_3N_4$ ceramics produced by nitridation and post-sintering using semiconductor-waste-Si sludge were investigated. Lots of microcracks were observed in the waste-Si powders which contained some amounts of amorphous $SiO_2$. The nitridation rate of waste-Si compacts showed lower value than that of commercial Si powder compacts. The nitridation rate was increased with increasing nitridation temperature and then the percent of nitridation at 1470$^{\circ}C$ showed 98%. The phases of $Si_3N_4$ in the reaction-bonded bodies were mixed with ${\alpha}$ and ${\beta}$-type, and small amounts of $Si_2N_2O$ phase while those after post-sintering were ${\beta}$-$Si_3N_4$ and ${\alpha}$-Sialon. The sample post-sintered at 1950$^{\circ}C$ showed the fracture toughness of 5.6 $^MPa{\cdot}m^{1/2}$ and the fracture strength of 497 MPa which were lower than those of sintered body using commercial Si powder possibly due to the formation of ${\alpha}$-Sialon phase.

• Current Research on Agriculture and Life Sciences
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• v.31 no.3
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• pp.193-199
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• 2013

This study dyed rayon fabric using loess as a natural colorant. To obtain the optimal dyeing conditions, various dyeing conditions were examined (temperature, pH, time, and concentration). The color fastness was evaluated using standard washing and rubbing fastness tests. The results were as follows: The loess powder particle size ranged from 0.4 to $1.7{\mu}m$ with a distribution range of 1.1 to $1.4{\mu}m$, representing a fine and uniform manufactured loess powder. The loess component analysis showed a large amount of silicon dioxide and aluminum oxide. TheFT-IR spectra showed that the ammonium group in the rayon fabric produced N-H banding at $1,540cm^{-1}$. The highest K/S value for the rayon fabric was obtained when the pH was 8.0, and this value increased rapidly with a longer dyeing time and when increasing the loess concentration to 30% (w/v). Pre-treatment with a soybean solution produced the highest K/S value for the rayon fabric with a loess concentration of 30% (w/v). The SEM analysis showed a higher amount of loess adhered to the rayon fabric surface when increasing the loess concentration. However, pre-treatment with a cationic agent and soybean solution resulted in a much higher attachment of loess to the fabric surface. Thus, the experimental results showed that using a cationized fabric and pre-treatment with a soybean solution are more effective when dyeing rayon fabric with loess than when using only loess.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Journal of the Korea Institute of Building Construction
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• v.21 no.5
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• pp.459-468
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• 2021

Blocking electromagnetic waves on the exterior walls of buildings effectively reduces the intensity of electromagnetic fields in buildings, which leads to attenuation of electromagnetic disturbances, so there is a great interest in developing technologies. In this study, SiC by-products and graphite generated in the semiconductor field were selected and mixed into mortar after pretreatment such as pulverization to evaluate their physical properties and electromagnetic wave shielding performance. Considering the economic efficiency of each shielding material, only 10% volume of the outermost side of the experiment was mixed with each shielding material to evaluate the shielding performance. The shielding performance was predicted when the experiment was manufactured by mixing the shielding material with the entire volume of the experiment using the shielding effect evaluation formula. The results of the experiment showed that the shielding performance was up to 20 dB when SiC grains were mixed with shielding materials, the shielding performance was up to 18 dB when graphite powder was mixed with shielding materials, and the shielding performance was up to 28 dB when SiC powder was mixed with shielding materials, and the shielding performance was close to 30 dB, which is known to have a shielding rate of 99.9%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.