• Journal of the Society of Cosmetic Scientists of Korea
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• v.34 no.4
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• pp.269-274
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• 2008

In this study we successfully altered the structural characteristics of the mica surface and were able to control oil-absorption by using the microwave enhanced etching (MEE) technique, which has originally been used in semiconductor industry. When microwave energy is applied to the mica, the surface of the mica is etched in a few minutes. As the result of etching, oil-absorption of the mica was enhanced and surface whiteness was improved by modifying the silicon dioxide layer. Additionally, the high whiteness was maintained even though the etched mica absorbed the sebum or sweat. The surface modification of mica was performed by microwave irradiation after the treatment of hydrofluoric acid. The degree of etching was regulated by acid concentration, irradiation time, the amount of energy and slurry concentration. The surface morphology of the etched mica appears to be the shape of the 'Moon'. The characteristics of surface area and roughness were examined by Brunauer-Emmett-Teller (BET) surface area analysis, atomic force microscopy (AFM), scanning electron microscopy (SEM), spectrophotometer and goniophotometer.

• Macromolecular Research
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• v.12 no.2
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• pp.156-171
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• 2004

We describe the precision synthesis schemes of siloxane-containing polymers, i.e., the control of their molecular weight, stereoregularity, and higher-order structures. First, we found a new catalytic dehydrocoupling reaction of water with bis(dimethylsilyl)benzene to give poly(phenylene-disiloxane). Together with this reaction, we applied hetero-condensations to the synthesis of thermally stable poly(arylene-siloxane)s. The dehydrocoupling reaction was applied to the synthesis of syndiotactic poly(methylphenylsiloxane) and poly(silsesquioxane)s, which we also prepared by hydrolysis and deaminative condensation reactions. We discuss the tendency for loop formation to occur in the synthesis of poly(silsesquioxane) by hydrolysis, and provide comments on the design of functionality of the polymers produced. By taking advantage of the low energy barrier to rotation in the silicon-oxygen bond, we designed selective oxygen-permeable membrane materials and liquid crystalline materials. The low surface free energy of siloxane-containing systems allows surface modification of a blend film and the design of holographic grating materials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Journal of Korea Foundry Society
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• v.18 no.4
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• pp.349-356
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• 1998

In this study, the influence of impurity element Ca, P on solidification behavior and morphology of eutectic silicon was examined by observation of microstructure and by DSC analysis. In the case of 1.3 ppm P, eutectic Si was fine and fibrous when the added amount of Ca was 500 ppm, However, the modification of eutectic Si was depressed by formation of polygonal Ca-Si compounds when the addition amount of Ca was greater than 1000 ppm. The addition of Ca 500 ppm depressed the primary and eutectic temperature. The primary and eutectic temperature were depressed with Ca 500 ppm but rather ascended when the addition amount of Ca was more than 1000 ppm. When the content of P was 17.5 ppm, eutectic Si had modified morphology with Ca addition. DAS was increased, the primary temperature was ascended and eutectic temperature was depressed with Ca added. Eutectic Si appeared as coarse flake phase and DAS was decreased with the increase of P content. The existence of P in the melt depressed the primary temperature and ascended eutectic temperature.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.459-463
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• 2000

Direct use of negative ions for modification of materials has opened new research such as charging-free ion implantation and new materials syntheses by pure kinetic bonding reactions. For these purposes, a new solid-state ce-sium ion source has been developed in the laboratory scale. In this paper, diamond like carbon(DLC) films were prepared on silicon wafer by a negative cesium ion gun. This system does not need any gas in the chamber; deposition occurs under high vacuum. The ion source has good control of the C- beam energy(from 80 to 150eV). The result of Raman spectrophotometer shows that the degree of diamond-like character in the films, $sp^3$ fraction, increased as ion beam energy increases. The nanoindentation hardness of the films also increases from 7 to 14 GPa as a function of beam energy. DLC films showed ultra-smooth surface(Ra~1$\AA$)and an impurity-free quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.446-451
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• 2018

In this study, different formulations of magnesium oxide and various modifiers (phosphoric acid, ferrous sulfate, pure acrylic emulsion, silicone acrylic emulsion, glass fiber, and polypropylene fiber) were used to prepare magnesium oxychloride cement composites. The compressive strength of the magnesium oxychloride cement was tested, and the softening coefficients of the composites after soaking in water were also calculated. The results showed that a magnesium oxychloride cement sample could not be coagulated when the MgO activity was 24.3%, but the coagulation effect of the magnesium oxide cement sample was excellent when the MgO activity was 69.5%. While pure acrylic emulsion, silicon-acrylic emulsion, and glass fiber showed insignificant modification effects on the magnesium oxychloride cement, ferrous sulfate heptahydrate, phosphoric acid, and polypropylene fiber could effectively improve its water resistance and compressive strength. When the phosphoric acid, ferrous sulfate heptahydrate, and polypropylene fiber contents were 0.47%, 0.73%, and 0.25%, respectively, the softening coefficient of a composite soaked in water reached 0.93 after 7 days, and the compressive strength reached 64.3 MPa.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.113-113
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• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.26 no.1
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• pp.41-58
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• 2000

Recently the harmfulness of W radiation is in creasing due to encironmental pollution. Environmental population may also play a role in global decrease of ozone layer, A major consequence of ozone depletion is increase in solar ultra violet radiation received at the earth's surface excessive exposure to W radiation cause a lot of problems in our skin. Plant extract that possess antioxidative activities has been reported to retard the oxidation process in product to which they have been added. Plant are alived under solar light. So it is expect the plants have so many protection mechanisms and UV absorbent ingredients against ultra violet radiation such as UVB, UVA. Plant extract which were flavonoids, alkaloids and others could be transformed into UV absorber by chemical modification. Therefore with the aim of finding alternative natural absorber that can safely be used in cosmetic, we have screened various extract for their UV absorbent effect. Thus, the cosmetic safety against human skin, antimicrobial effects and others could be improved by using the silicon.