• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• 한국세라믹학회지
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• 제27권2호
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• pp.219-225
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• 1990

Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

• Nuclear Engineering and Technology
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• 제55권10호
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• pp.3725-3731
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• 2023

Thorium dioxide (ThO₂)-silicon carbide (SiC) composite fuel pellets were fabricated via the spark plasma-sintering (SPS) method to investigate the role of the addition of SiC in enhancing the thermal conductivity of ThO₂ fuel. SiC particles with an average size of 1㎛ in 10 and 15 vol% were used to manufacture the composite pellets. The changes in the composites' densification, microstructure and thermal conductivity were explored by comparing them with pure ThO₂ pellets. The structural and microstructural characterization of the composite pellets has revealed that SPS could manufacture high-quality composite pellets without having any reaction products or intermetallic. The density measurement by the Archimedes principles and the grain size from the electron back-scattered diffraction (EBSD) analysis has indicated that the composites have higher densities and smaller grain sizes than the pellets without SiC addition. Finally, thermal conductivity as a function of temperature has revealed that sintered ThO₂-SiC composites showed an increase of up to 56% in thermal conductivity compared to pristine ThO₂ pellets.

• 한국세라믹학회지
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• 제41권3호
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• pp.197-201
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• 2004

플라즈마 화학기상증착(PECVD)법을 이용하여 Si(100) 웨이퍼에 silicon oxide(SiO$_2$)와 silicon oxynitride(SiON) 후막을 SiH$_4$, $N_2$O, $N_2$가스를 혼합하여 증착하였다. RF power와 rf bias power의 변화에 따른 SiO$_2$ 막과 SiON 막의 특성변화에 대하여 고찰하였다. RF power와 rf bias power가 증가함에 따라 굴절률은 감소하는 경향을 나타내었으며, 막의 굴절률은 1552 nm에서 1.4493-1.4952까지 변화하였다. 이와 같이 rf power가 증가함에 따라 굴절률이 감소하는 이유는 oxygen의 량이 증가하고 nitrogen의 량이 감소하여 즉, O/N 비가 증가하여 굴절률이 감소하는 경향을 나타내었다.

• 전기의세계
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• 제22권2호
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• pp.11-18
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• 1973

This paper reports some results of Si and SiO$_{2}$ films obtained from the expitaxial growth by hydrogen reduction of SiCI$_{4}$ with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. The deposited Si and SiO$_{2}$ are studied by observing the process parameters affecting the rate of deposition, and the quantitative properties at the interface of Si and SiO$_{2}$ are also considered briefly according to the results of the optical absorption and the voltage-current characteristic of MOS etc. using step etching procedure for oxide films.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.505-507
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• 2014

본 연구에서는 제일원리 계산을 이용하여 $Si(100)/SiO_2$ 계면 내부에서 발생하는 point defect들의 거동에 대해 살펴보았다. Defect 계산에 앞서 안정한 $Si/SiO_2$ 계면을 찾아보았고 찾은 계면을 바탕으로 계면에서 point defect의 formation energy를 계산해 보았고 이를 통해 Si defect의 경우 Si층 쪽 보다는 $SiO_2$ 층에서, 그리고 계면 내부 보다는 계면 경계 근처에서 발생할 가능성이 높음을 보였다.

• 한국세라믹학회지
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• 제38권11호
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• pp.1037-1041
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• 2001

저온(32$0^{\circ}C$)에서 SiH$_4$와 $N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2560-2564
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• 2011

Mesoporous silicon dioxide (meso-$SiO_2$) was prepared using cetyltrimethylammonium bromide as the structure-directing reagent and tetraethyl orthosicate as the silicon source. The influence of pH value on the adsorption behavior of bisphenol A (BPA) was investigated. The adsorption capacity of BPA onto meso-$SiO_2$ increases slightly with pH value from 2 to 6, and then gradually decreases as further improving pH value. The effect of temperature was also studied, and the adsorption capacity of BPA gradually declines with increasing temperature. The adsorption kinetics and thermodynamics of BPA were examined. It is found that the adsorption of BPA onto meso-$SiO_2$ is in good agreement with Langmuir adsorption model. The rate constant of adsorption is $5.17{\times}10^{-3}g\;mg^{-1}\;min^{-1}$, and the maximum adsorption capacity is as high as 353.4 $mg\;g^{-1}$ at 20 $^{\circ}C$.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• 한국산업보건학회지
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• 제26권2호
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• pp.119-138
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• 2016

Objectives: The purpose of this study is to review size, shape, and crystal structure-dependent toxicity of major metal oxide particles such as silicon dioxide, tungsten trioxide, aluminum oxide, and titanium dioxide as byproducts generated in semiconductor fabrication facility. Methods: To review the toxicity of major metal oxide particles, we used various reported research and review papers. The papers were searched by using websites such as Google Scholar and PubMed. Keyword search terms included '$SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$) toxicity', 'health effects $SiO_2$(or $WO_3$ or $Al_2O_3$ or $TiO_2$). Additional papers were identified in references cited in the searched papers. Results: In various cell lines and organs of human and animals, cytotoxicity, genotoxicity, hepatoxicity, fetotoxicity, neurotoxicity, and histopathological changes were induced by silicon dioxide, tungsten trioxide, aluminium oxide, and titanium dioxide particles. Differences in toxicity were dependent on the cell lines, organs, doses, as well as the chemical composition, size, surface area, shape, and crystal structure of the particles. However, the doses used in the reported papers were higher than the possible exposure level in general work environment. Oxidative stress induced by the metal oxide particles plays a significant role in the expression of toxicity. Conclusions: The results cannot guarantee human toxicity of the metal oxide particles, because there is still a lack of available information about health effects on humans. In addition, toxicological studies under the exposure conditions in the actual work environment are needed.