• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.285-289
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• 2008

Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.430-437
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• 2008

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2001.10a
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• pp.141-143
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• 2001

Ceramic fiber-reinforced composites have good mechanical properties in hardness and durability. In this study, we studied the formation of SiC/C composites from methyltrichlorosilane and hydrogen by the Pulse-chemical vapor infiltration(PCVI) to deposit silicon carbide around the changes of the amount of deposit. SiC/C composites formed at $950^{\circ}C$, 20torr, Pulse-times (5s/60s). SEM of the cross sectional area of semple showed deposited silicon carbide around fibers.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.211-225
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• 1986

Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.431-432
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• 2008

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.211-212
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• 2002

Friction and wear of pressureless sintered Ti(C,N)-WC ceramics were studied using a ball-on-reciprocating flat apparatus in open air. The silicon nitride ball and the cemented carbide (WC-Co) ball were used against the Ti(C,N)-WC plate samples. The friction coefficients of the Ti(C,N)-WC samples against the silicon nitride ball and the cemented carbide ball were about 0.57 and 0.3, respectively. The wear coefficient of the sample without WC addition was 5 times as large as that of the sample with 10 mole % WC addition when tested against the silicon nitride ball under 98 N. The higher wear coefficient of Ti(C,N)-0WC was explained in part by larger grain size. Wear occurred mainly by grain dislodgment after intergranular cracking mainly caused by the accumulated stress within the grains.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.583-587
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• 1989

Various $\alpha$-silicon carbied and colloidal graphite particles were sintered at 155$0^{\circ}C$ in vacuum atmosphere by reaction bonding sintering method, and the physical properties and microstructural analysis of specimen were investigated. With decreasing particle size, sintered density and 3-point bending strength of materials were increased and 3.2${\mu}{\textrm}{m}$ specimen showed high density and strength, 3.05g/㎤, 40kg/$\textrm{mm}^2$, respectively. The results of X-ray diffractometer and optical micrographs analysis showed that graphite and silicon melt reacted to convert to fine $\beta$-SiC particle and the body was changed to dense material.

• Carbon letters
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• v.1 no.1
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• pp.12-16
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• 2000

Carbon fiber was reacted with gaseous silicon monoxide which is produced from pack-powder mixture at elevated temperature. As a result of the reaction, two kinds of SiC fiber were obtained. The first one was SiC fibers which were converted from carbon fiber. The fiber is constituted with polycrystal like fine grains or monolithic crystals that have a size from sub-micron to $10\;{\mu}m$. Their size depends on the temperature during the conversion reaction. The second one was ultra-fine SiC fibers that were found on the surface of the converted SiC fibers. The ultra-fine fibers have diameters from 0.08 to $0.2\;{\mu}m$ and their aspect ratio were larger than 100. The chemical composit ion of the ultra-fine fibers was analyzed using an Auger electron spectroscopy. In result, the fibers consist of 51% silicon, 38% carbon and 11% oxygen by weight.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1249-1256
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• 1998

${\beta}$-Silicon carbide(${\beta}$-SiC) whiskers could be synthesized by the carbothermal reduction of kaolin at tem-peratures between 1400 and 1500$^{\circ}C$. The whiskers were grown up to about 1150 of aspect ratio by VS mechanism (showing tapering tips) and to about 45 of that by VLS mechanism (showing round droplet tips) respectively. Hydrocarbon like methane in the reaction atmosphere promoted the formation of gaseous il-icon monoxide(SiO) from silicon dioxide(SiO2) and subsequently reacted with it to form whiskers. The for-mation of ${\beta}$-SiC whiskers increased with increasing carbon content(to 30 wt%) and reaction temperatures. The max. yield of ${\beta}$-SiC whiskers was 15% at 1500$^{\circ}C$ under 20%CH4/80%H2.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.