• International Journal of Quality Innovation
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• 제7권2호
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• pp.141-156
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• 2006

This study describes a novel algorithm for optimizing the quality yield of silicon wafer slicing. 12 inch wafer slicing is the most difficult in terms of semiconductor manufacturing yield. As silicon wafer slicing directly impacts production costs, semiconductor manufacturers are especially concerned with increasing and maintaining the yield, as well as identifying why yields decline. The criteria for establishing the proposed algorithm are derived from a literature review and interviews with a group of experts in semiconductor manufacturing. The modified Delphi method is then adopted to analyze those results. The proposed algorithm also incorporates the analytic hierarchy process (AHP) to determine the weights of evaluation. Additionally, the proposed algorithm can select the evaluation outcomes to identify the worst machine of precision. Finally, results of the exponential weighted moving average (EWMA) control chart demonstrate the feasibility of the proposed AHP-based algorithm in effectively selecting the evaluation outcomes and evaluating the precision of the worst performing machines. So, through collect data (the quality and quantity) to judge the result by AHP, it is the key to help the engineer can find out the manufacturing process yield quickly effectively.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.301-306
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• 2017

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.68-71
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• 2000

In this paper, we have measured the oxygen contents by FTIR in silicon wafer various process technology(slicing, lapping, polishing). The measured data are also compared with the data of etching process(KOH, Bright etching). Also we have measured the surface morpology in backside silicon wafer after etching treatment and etch pit density due to OISF after 4 step high temperature annealing process with optical microscope.

• 한국결정성장학회지
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• 제26권5호
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.

• 한국산업정보학회논문지
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• 제17권1호
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• pp.1-9
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• 2012

본 논문은 태양전지용 실리콘 잉곳 절삭시 발생하는 폐 슬러지에서 실리콘, 연마재를 분리 회수 재사용하는 시스템에 관한 것이다. 분리시스템의 기본 공정은 다중원심분리이고 분리 효율을 높이기 위해 초음파 교반, 알코올 물 가수, 가열처리를 하였다. 실리콘의 경우 2N의 경우 96% 회수율을 보였고, 4N의 경우 94%의 회수율을 보였다. 연마재인 SiC의 경우에는 약 80%의 회수율을 보였다. 4N의 고순도 Si 회수를 위해서는 진공열처리를 수행하여 잔류성분을 제거하였다.

• 한국산학기술학회논문지
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• 제4권1호
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• pp.47-49
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• 2003

태양전지에 소모되는 비용중의 30% 이상이 silicon 기판의 가공 및 silicon자체의 비용이다. 본 연구에서는 이러한 비운을 절감하기 위해 silicon기판대신 STS 304를 사용하고자 한다. STS 304를 태양전지용 기판으로 사용하기 위해서는 고도천 연마된 표면을 필수조건으로 하기 때문에 STS 304에 전해연마를 실시하여 AFM으로 표면의 거칠기를 살펴보았다 또 한, 표면 조도의 향상을 위해 최적의 연마조건에서 leveller를 첨가하였다. 인산($H_3PO_4$)을 기본으로 한 전해연마액에 2A의 전류와 극간거리 0.7cm의 조건하에서 STS 304의 최적 전해연마조건을 찾기 위해 전해액의 온도는 $80^{\circ}C{\sim}120^{\circ}C$, 연마시간은 3~2분간 전해연마를 실시하였다. 그 결과 2A/$cm^2$, $80^{\circ}C$, 10분에서 27.9nm의 표면조도를 보였으며, leveller로 사용된 glycerine, ethylene glycol, propylene glycol의 영향을 연구하였다. Leveller 중에서는 ethylene glycol을 0.4g/l 첨가하였을 때 표면조도가 약 15nm로서 그 효과가 가장 좋았다.

• 대한전자공학회논문지
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• 제7권2호
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• pp.33-42
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• 1970

액상과 고상의 불순물원을 사용한 이중확산법을 이용하여 초분수형 p-n 접합 VVC다이오드를 열작하고 그 특성을 측정하였다. 먼저 접합부근의 불순물분포를 지수난수로 근사시키고 여기에서 부터 유도되는 인가전압대 접태용총번계, 접합부에서의 섬계로계강도, 규재주파수 등을 고려하여 WC 다이오드외 새로운 담계수법을 위시하였다. 이 설계도표는 원하는 특성의 VVC다이오드를 번표와에서 나접 설계 할수있으므로 매우 사리하다. VVC다이오드는 2.5ohnm-cm의 n형, 실리콘박편위에 도너불순물 POCl3를 사용하여 선을 확정시키고, 다시 억셉터 불순물 BN을 사용하여 붕소를 확산시켜서, 접합깊이 2미크론에 초단계형접합을 만드므로서 제작하였다. 본연구에서 텔레비젼 수상기튜너용으로 시작한 다이오드의 최대용량대 총소용량의 비는 4:1이였고 그외의 전기적 제 특성도 이론적으로 설계한 값들과 거의 합치된 결과를 얻었다. 한편 이때의 실리콘 박편의 제작법과 확산기술에 관하여 간단히 기술하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.259-263
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• 2001

There are several steps such as slicing, lapping, chemical etching and mechanical polishing in the silicon wafer production process. The chemical etching step is necessary to remove damaged layer caused In the slicing and lapping steps. The typical etching liquor is the acid mixture comprising nitric acid, acetic acid and hydrofluoric acid. At present, the waste acid is treated by a neutralization method with a high alkali cost and balky solid residue. A solvent extraction method is applicable to separate and recover each acid. Acetic acid is first separated from the waste liquor using 2-ethlyhexyl alcohols as an extractant. Then, nitric acid is recovered using TBP(Tri-butyl phosphate) as an extractant. Finally hydrofluoric acid is separated with the TBP solvent extraction. The expected recovered acids in this process are 2㏖/l acetic acid, 6㏖/1 nitric acid and 6㏖/l hydrofluoric acid. The yields of this process are almost 100% for acetic acid and nitric acid. On the other hand, it is important to recover and reuse the metal values contained in various industrial wastes in a viewpoint of environmental preservation. Most of industrial products are made through the processes to separate impurities in raw materials, solid and liquid wastes being necessarily discharged as industrial wastes. Chemical methods such as solvent extraction, ion exchange and membrane, and physical methods such as heavy media separation, magnetic separation and electrostatic separation are considered as the methods for separation and recovery of the metal values from the wastes. Some examples of the application of solvent extraction to the treatment of wastes such as Ni-Co alloy scrap, Sm-Co alloy scrap, fly ash and flue dust, and liquid wastes such as plating solution, the rinse solution, etching solution and pickling solution are introduced.