• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.976-979
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• 2002

This research presents the new method to fabricate small features through applying chemical mechanical micro machining(C3M) for Al5052 and single crystal silicon. To improve machinability of ductile and brittle material, reacted layer was formed on the surface before micro-drilling process by chemical reaction with $HNO_3$(10wt%) and KOH(10wt%). And then workpieces were machined to compare conventional micro-drilling process with newly suggested one. To evaluate whether or not the machinability was improved by the effect of chemical condition, surface defects such as burr, chipping and crack generation were measured. Finally, it is confirmed that C3M is one of the feasible tools for micro machining with the aid of effect of the chemical reaction.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.276-281
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• 2000

Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

• Laser Solutions
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• v.14 no.4
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• pp.14-20
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• 2011

The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.65-69
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• 2008

This work shows that the grinding-induced scratches formed on the back surface of silicon chips can highly influence the flexural strength of the chips. Meanwhile, in a case that excellent adhesion between the back surface and the plastic package body maintains, the flexural strength of plastic-encapsulated packages is not so sensitive to the geometry of the scratch marks. This article explains why such different flexural fracture behavior between bare chips and plastic-encapsulated chips appears.

• Composites Research
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• v.33 no.6
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• pp.395-400
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• 2020

In this paper, we manufactured silsesquiaznae (SSQZ)-coated carbon nanotube (CNT) surface heating elements, which allowed stable heating at high temperatures. The prepared composite sheet was confirmed by FE-SEM that the SSQZ fully coated the surface of CNT sheet. Furthermore, it was also confirmed that the silicon carbonitride (SiCN) ceramic formed by heat treatment of 800℃ have no defects found and maintain intact structure. The CNT/SiCN composite sheet was able to achieve higher thermal stability than raw CNT sheets in both nitrogen and air atmosphere. Finally, the CNT/SiCN composite sheet was possible to heat up at a temperature of over 700℃ in the atmosphere, and the re-heating was successfully operated after cooling.

• Korean Journal of Optics and Photonics
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• v.33 no.5
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• pp.218-229
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• 2022

We have investigated reliable inspection methods for finding the defects generated during the manufacturing process of lightweight, large-aperture satellite telescope mirrors using silicon carbide, and we have measured the basic physical properties of the mirrors. We applied the advanced ceramic material (ACM) method, a combined method using liquid-silicon penetration sintering and chemical vapor deposition for the carbon molded body, to manufacture four SiC mirrors of different sizes and shapes. We have provided the defect standards for the reflectors systematically by classifying the defects according to the size and shape of the mirrors, and have suggested effective nondestructive methods for mirror surface inspection and internal defect detection. In addition, we have analyzed the measurements of 14 physical parameters (including density, modulus of elasticity, specific heat, and heat-transfer coefficient) that are required to design the mirrors and to predict the mechanical and thermal stability of the final products. In particular, we have studied the detailed measurement methods and results for the elastic modulus, thermal expansion coefficient, and flexural strength to improve the reliability of mechanical property tests.