• Journal of the Korean Society for Marine Environment & Energy
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• 제15권3호
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• pp.198-207
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• 2012

In this study, we investigated the effect of ocean fertilization by deep sea water, using an ecosystem model which contains not only phytoplankton but also zooplankton. The model is based on NEMURO which consists of eleven compartments - two species of phytoplankton, three species of zooplankton, $NO_3$, $NH_4$, $Si(OH)_4$, particulate organic nitrogen, dissolved organic nitrogen and particulate silicon. We introduced nitrogen cell quota in the both species of phytoplankton, and silicon cell quota in the large phytoplankton in addition to the eleven compartments of NEMURO. We made the experiment at Izu Oshima Island in order to investigate the effect of ocean fertilization. In this experiment, we could not find clear differences between the cases with and without deep sea water. We investigated the causes of the experiment results by the model simulations. One of the causes was high concentrations of nutrients in surface seawater used in the experiment. Another was that the increase of total concentration of inorganic nitrogen does not necessarily accelerate the photosynthetic rate because inorganic nitrogen uptake rate is related to the ratio of $NO_3$ to $NH_4$. Because the model can represent the results of the experiment, we investigated the effect of ocean fertilization by deep sea water using this model. We found that the effect of ocean fertilization hardly appeared when the interval of the addition of deep sea water was too short, or the amount of deep sea water was too much. It is supposed that if the addition of deep sea water is too frequent or too much, the dilution of plankton's concentrations will exceed the effect of promoting phytoplankton's photosynthesis.

• Korean Journal of Materials Research
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• 제23권1호
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.310-316
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• 2012

The chromaticity of polyethylene glycol (PEG) generated from the recyling of a silicone slurry waste was improved by using activated carbon powder and a carbon filter. The color change of the PEG waste was investigated by changing the amount of adsorbent, adsorption time and temperature. The surface area of activated carbon did not have a significant impact on improving the color of the PEG waste. According to the results for the APHA color variation of the PEG waste changing the amount of the carbon adsorbent, the optimal usage to achieve the low APHA value was 100~150 mg-C/g-PEG. From the investigatnion on the effect of the adsorption temperature range from $25^{\circ}C$ to $100^{\circ}C$, it was found that the optimal temperatures were $40{\sim}50^{\circ}C$ in terms of achieving the lowest APHA value. The variation of the APHA color was investigated by changing the operation condition of the activated carbon filters. The use of ACF was a good way to enhance the chromaticity of the PEG waste. As a result, the APHA value of the PEG waste (APHA=53 at the initial waste) was reduced to be 10 through the ACF purification. It was also confirmed that the performance of the used carbon adsorbent can be recovered by the washing with purified water.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제39권9호
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• pp.11-18
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• 2002

This paper presents a CPW phase shifter and shunt stub with air-bridge on a 10-${\mu}m$-thick oxidized porous silicon(OPS) substrate using surface micromachining. The line dimensions of the CPW phase shifter was designed with S-W-Sg = 100-30-400 ${\mu}m$. And the width and length of the air-bridge with "ㄷ“ shape were 100 ${\mu}m$ and 400-460-400 ${\mu}m$, respectively. In order to achieve low attenuation, stepped air-bridge CPW phase shift was proposed. The insertion loss of the stepped air-bridge CPW phase shift is more improved than that of no stepped air-bridge CPW phase shift. The measured phase characteristic of the fabricated CPW phase shifter is close to 180$^{\circ}$ over a very broad frequency range of 28 GHz. The measured working frequency of short-end series stub is 28.7 GHz and the return loss is - 20 dB. And the measured working frequency of short-end shunt stub is 28.9 GHz and the return loss is - 23 dB at midband. As a result, the pattering of stub in the center conductor of CPW lines can offer size reduction and lead to high density chip layouts.

• Korean Journal of Materials Research
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• 제11권6호
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• pp.512-518
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• 2001

It has been well known that 6.5wt% Si steel sheets have excellent magnetic properties such as low core loss. high maximum permeability and low magnetostriction. In this work, we studied a method for producing 6.5wt% Si steel sheets using a chemical vapor deposition (CVD) method. The following is the procedure adopted in this work to produce 6.5wt% Si steel sheets; SiCl$_4$ gas is applied onto a low content-Si steel sheet placed in a tube furnace. Silicon atoms resulted from the decomposition of SiCl$_4$ are permeated through the surface of the steel sheet. Finally, by the diffusion process maintaining it under a high temperature the silicon atoms diffuse uniformly into the sheet. Through this process, 6.5wt% Si steel sheets can be obtained. The manufactured Fe-6.5wt% Si steel sheet with a thickness of 0.5mm exhibited a high frequency core loss (W$_{2}$1k/) of 8.92 W/kg. Its permeability increased from 37,100 to 53,300 at 1 tesular(T). The mechanical properties of the manufactured steel sheets were also estimated and the result showed that the workability was significantly improved by annealing in vacuum at 773k. Increased plastic deformation was also observed prior to fracture and the amount of grain boundary rupture was reduced.

• Journal of Sensor Science and Technology
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• 제8권3호
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Journal of the Korean Vacuum Society
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• 제9권3호
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제32권1호
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• pp.7-11
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• 2022

Recently, Hanmi Gemological Institute & Laboratory (HGI) had an opportunity to examine 5 transparent synthetic moissanite. The round brilliants ranged from 0.93 to 0.96 ct and had a colorless, pink, yellow, blue, and red color. Advanced testing results, including Fourier-transform infrared (FTIR) and Raman spectroscopy, identified all the specimens as synthetic moissanite. Under the microscope, all samples except the colorless were confirmed to be a synthetic moissanite coated with a colored film. EDXRF chemical analysis detected very weak X-ray fluorescence peak characteristics of Ca, Ti, and Co in the colored samples. These features were not detected in the colorless sample. Raman spectroscopy investigation was unable to detect the 1332 cm^-1 (produced by sp³ bonding of carbon atoms) or the ~1550 cm^-1 (produced by graphite-related sp² bonding) peak in the colorless sample. The SEM image of the colorless sample showed no indication of a coating. The TEM image of the colorless sample revealed the presence of a 3~8 nm thick layer on the moissanite. Moreover, from the corresponding STEM Z-contrast image combined with the energy-dispersive X-ray spectroscopy (EDX) line profiles and EDX elemental maps, this layer was estimated to be carbon, silicon and oxygen.

• Korean Chemical Engineering Research
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• 제60권4호
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• pp.535-543
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• 2022

A CPFD (Computational particle fluid dynamics) model of solar fluidized bed receiver of silicon carbide (SiC: average d_p=123 ㎛) particles was established, and the model was verified by comparing the simulation and experimental results to analyze the effect of particle behavior on the performance of the receiver. The relationship between the heat-absorbing performance and the particles behavior in the receiver was analyzed by simulating their behavior near bed surface, which is difficult to access experimentally. The CPFD simulation results showed good agreement with the experimental values on the solids holdup and its standard deviation under experimental condition in bed and freeboard regions. The local solid holdups near the bed surface, where particles primarily absorb solar heat energy and transfer it to the inside of the bed, showed a non-uniform distribution with a relatively low value at the center related with the bubble behavior in the bed. The local solid holdup increased the axial and radial non-uniformity in the freeboard region with the gas velocity, which explains well that the increase in the RSD (Relative standard deviation) of pressure drop across the freeboard region is responsible for the loss of solar energy reflected by the entrained particles in the particle receiver. The simulation results of local gas and particle velocities with gas velocity confirmed that the local particle behavior in the fluidized bed are closely related to the bubble behavior characterized by the properties of the Geldart B particles. The temperature difference of the fluidizing gas passing through the receiver per irradiance (∆T/I_DNI) was highly correlated with the RSD of the pressure drop across the bed surface and the freeboard regions. The CPFD simulation results can be used to improve the performance of the particle receiver through local particle behavior analysis.