• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.33-39
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• 1985

A composition containing a-$Si_3N_4$ with 5w/0 $Y_2O_3$ and 4w/0 $Al_2O_3$ was hot-pressed at 1, $650^{\circ}C$ and 350kg/$cm^2$ for 1.5hrs and specimens of the same composition were pressureless-sintered at 1, 75$0^{\circ}C$ for 1.5 and 5hrs. By X-ray diffraction it was found that hot-pressed specimens were consisted of $\alpha$-and $\beta$-$Si_3N_4$ and sintered specimens were consisted of $\beta$-$Si_3N_4$ and $Si_3N-4Y_2O_3$ which was crystallized out from the grainboundary phase. The 5-hr sintered specimens had higher degree of crystallization than the 1.5 hr sintered specimens. Among these three different specimens the 5-hr sintered specimens showed the highest strength by hot MOR test at 1, 00$0^{\circ}C$. The SPT diagram for the 5-hr sintered $Si_3N_4$ was constructed by measurements of the stress rate dependence of fracture strength.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.483-489
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• 1999

Gas pressure sintered silicon nitride based composites with 3 wt% $\beta$-Si3N4 whiskers were prepared and change of properties according to the whisker orientation and sintering temperature was studied. The tapes with whiskers were fabricated by two different method ; conventional tape casting and a modified tape casting by using guide pins,. Orientations of the whiskers were controlled by different stacking sequences of the sheets cut from the tape. Samples were fully densified by gas pressure sintering at 2148-2273K. As the sintering temperature increased size of the large elongated grains increased. In case of unidirectional samples sintering shrinkage normal to the whisker alignment direction was larger than that of parallel to the direction and the shrinkage anisotropy increased slightly as sintering temperature increased. As sintering temperature increased the crack length parallel to whisker alignment direction became shorter but that normal to the direction did not depend on sintering temperature. In case of cross-plied samples the anisotropy of mechanical properties disappeared.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.48-54
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• 1998

The effect of coating thickness on the contact fracture was studied, in Si3N4 coated Si3N4-BN system When the elastic/plastic mismatch is relatively large betwen two layers in bilayer certain critical coating thickness was required to prevent cone crack initiation and this critical thickness was decreased by de-creasing the elastic/plastic mismatch,. In addition the required critical thickness should be increased when higher loads apply. In conclusion an appropriate coating thickness should be designed by elastic/plastic mismatch between two layers and environment (applied load) to prevent the coating fracture

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.505-509
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• 2009

In this study, bulk nano-crystalline $Si_3N_4$ ceramics were fabricated by spark plasma sintering (SPS) and their mechanical properties, in particular wear, were investigated. A wide range of grain sizes, from 80 nm and 250 nm were obtained by varying sintering conditions ($1550^{\circ}C$-5 min to $1650^{\circ}C$-20 min). The elastic modulus of obtained ceramics was ${\sim}250$ GPa and hardness was in the range of $13{\sim}14$ GPa. The indentation fracture toughness increased from $2.58MPa{\cdot}m^{1/2}$ to $3.24MPa{\cdot}m^{1/2}$ with increasing sintering temperature possibly due to the elongated grains. Sliding wear tests revealed at least an order magnitude improvement in wear resistance with grain refinement. Microstructure analysis indicated that nano-$Si_3N_4$ specimens worn mainly through delamination and microcracking, while that of coarser specimens revealed severe wear with grain debonding and fracture.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.63-69
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• 1983

It is know that $Si_3-N_4$ bonded SiC has almost all the valuable properties needed for the high temperature material and thus has bery wide range of applicability. Si powder and two different sized SiC powder were used as the raw mateials. Specimens were prepared by heating the green compact mode of the raw materials with polyvinyl alcohol binder in the nitrogen atmosphere. The bond-ing of SiC particles is brought about with the formation of reaction bonded silicon nitride phase between the particles he influences of the variation of the relative amounts of the raw materials and the amount of the organic binder on the density and the bend strength of the specimens were investigated. It was shown that the calculation of the amount of the nitridation of Si is somewhat complicated matter since some portion of the organic binder reacts with the Si during the firing process. Fixing the Si amount to 20w/o the distributions of the size of the SiC particles that gives the maximum density and the maximum strnegth were obtained through experiments. It was observed that the two distributions were not equal to each other. As the amount of Si increased the amount of Si reacted with nitrogen and the strength increased. The fracture mode was intergranular for the most part and the transgranular fracture was scarcely observed.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.05a
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• pp.337-341
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• 2004

Engineering ceramics have superior heat resistance, corrosion resistance, and wear resistance. Consequently, these art significant candidates for hot-section structural components of heat engine and the inner containment of nuclear fusion reactor. Besides, some of them have the ability to heal cracks and great benefit can be anticipated with great benefit the structural engineering field. Especially, law fracture toughness of ceramics supplement with self-healing ability. In the present study, we have been noticed some practically important points for the healing behavior of silicon nitride, alumina, mullite with SiC particle and whisker. The presence of silicon carbide (SiC) in ceramic compound is very important for crack-healing behavior. However, self-healing of SiC has not been investigated well in detail yet. In this study, commercial SiC was selected as sample, which can be anticipated in the excellent crack healing ability. The specimens were produced three-point bending specimen with a critical semi-circular crack of which size that is about $50-700{\mu}m$. Three-point bending test and static fatigue test were performed cracked and healed SiC specimens. A monotonic bending load was applied to cracked specimens by three-point loading at different temperature. The purpose of this paper is to report Strength Properties and Elastic Waves Characteristics of Silicon Carbide with Crack Healing Ability.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.62-68
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• 2005

Oxidtion behavior of $Si_{3}N_{4}$ ceramics with the different porosity by the Nitrided Pressureless Sintering (NPS) were investigated in pure oxygen gas atmosphere at 1000 to $1300^{circ}C$. The thickness of formed oxide film on the surface of silicon nitride ceramics was increased with oxidation time and temperature. The oxide film thickness of 5A5Y5Si and 5A5Y10Si specimens for 100 h at 1300^{circ}C$ was about 10 $\mu$m and 20 $\mu$m, respectively. The oxidation of 5A5Y5Si and 5A5Y10Si specimens follows the parabolic behavior with an apparent activation energy of 215 kJ/mol and 104 kJ/mol, respectively. The flexural strength of 5A5Y5Si specimens after oxidation test for 500 h at 1300^{circ}C were maintained as-received value of 500 ma. On the other hand, that of 5A5Y10Si specimens were decreased about 100 MPa in as-received value.