• Journal of Electrical Engineering and Technology
• /
• v.7 no.3
• /
• pp.396-400
• /
• 2012

Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure. Nanobridges of various materials can be simply fabricated by direct deposition with thermal evaporation on the top of prefabricated suspended silicon nanobridge arrays, which are used as a sacrificial structure. Since silicon nanowire can be easily removed by selective dry etching, nanobridge arrays of an intended material are finally obtained. In this paper, metal nanobridges of Ti/Au, around 50-200 nm in thickness and width, 5-20 ${\mu}m$ in length were fabricated to prove the advantages of the proposed nanowire or nanobridge fabrication method. The nanobridges of Ti/Au after complete removal of sacrificial silicon nanowire template were well-established and bending of nanobridge caused by the tensile stress was observed after silicon removing. Up to 50 nm and 10 ${\mu}m$ of silicon nanowire in diameter and length respectively was also very useful for nanowire templates.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.488.2-488.2
• /
• 2014

Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.486-486
• /
• 2013

Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

• Korean Journal of Materials Research
• /
• v.18 no.12
• /
• pp.669-672
• /
• 2008

Well-aligned Zinc oxide (ZnO) nanowires were synthesized on silicon substrates by a carbothermal evaporation method using a mixture of ZnO and graphite powder with Au thin film was used as a catalyst. The XRD results showed that as-prepared product is the hexagonal wurzite ZnO nanostructure and SEM images demonstrated that ZnO nanowires had been grown along the [0001] direction with hexagonal cross section. As-grown ZnO nanowires were coated with glucose oxidase (GOx) for glucose sensing. Glucose converted into gluconic acid by reaction with GOx and two electrons are generated. They transfer into ZnO nanowires due to the electric force between electrons and the positively charged ZnO nanostructures in PBS. Photoluminescence (PL) spectroscopy was employed for investigating the movements of electrons, and the peak PL intensity increased with the glucose concentration and became saturated when the glucose concentration is above 10 mM. These results demonstrate that ZnO nanostructures have potential applications in biosensors.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.52.1-52.1
• /
• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.143-143
• /
• 2008

Nanowires are promising options for building nanoscale electronic structures coming from high conductivity of nanowires. In particular, Deoxyribonucleic acid (DNA), which is structurally nanowire, can obtain highly ordered electronic components for nanocircuitry and/or nanodevices because of its very flexible length controllability, nanometer-size diameter, about 2 nm, and self-assembling properties. In this work, we used the method to form DNA-Nanowires (NWs) by using chemical treatment on Silicon (Si) surface, and Aminopropyl-triethoxysilane (APTES) was used as inducer of DNA sequence to modify the characteristics of Si surface. Moreover, we performed tilting technique to align DNA by the direction of flow of DNA solution. We investigated the assembly process between DNA molecules and APTES - coated Si surface according to the APTES concentration, from $1.2{\mu}\ell$ to $120{\mu}\ell$. Atomic Force Microscopy (AFM) images showed the combination rate of DNA molecules by the change of APTES concentration. As APTES concentration becomes thicker, aggregation of DNA molecules occurs, and this makes a kind of DNA networks. In this respect, we confirmed that there's a positive relationship between the concentration of APTES and the formation rate of DNA nanowires. Since there have been lots of research preceded to utilize DNA nanowires as template, so by using this positive relationship with proper alignment technique, realization of nano electronic devices with DNA nanowires might be feasible.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.02a
• /
• pp.40-40
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.27.1-27.1
• /
• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Korean Journal of Materials Research
• /
• v.24 no.10
• /
• pp.509-514
• /
• 2014

We demonstrate a simple and effective method to accurately position silicon nanowires (Si NWs) at desirable locations using drop-casting of Si NW inks; this process is suitable for applications in nanoelectronics or nanophotonics. Si NWs were assembled into a lithographically patterned sacrificial photoresist (PR) template by means of capillary interactions at the solution interface. In this process, we varied the type of solvent of the SiNW-containing solution to investigate different assembly behaviors of Si NWs in different solvents. It was found that the assembly of Si NWs was strongly dependent on the surface energy of the solvents, which leads to different evaporation modes of the Si NW solution. After Si NW assembly, the PR template was cleanly removed by thermal decomposition or chemical dissolution and the Si NWs were transferred onto the underlying substrate, preserving its position without any damage. This method enables the precise control necessary to produce highly integrated NW assemblies on all length scales since assembly template is easily fabricated with top-down lithography and removed in a simple process after bottom-up drop-casting of NWs.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.5
• /
• pp.234-237
• /
• 2010

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.