• Journal of Oral Medicine and Pain
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• v.4 no.1
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• pp.13-21
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• 1979

Cases involving bite marks have increased considerably since first reports of bite wound for the individual identification in Korea 1969. This is probably due to fact that investigating officers are now more aware of the value of bite mark evidence and are always alter to the possibility of sign of bite mark. Authors recently had an experience in the identification of a criminal by tracing marks made on silicon rubber impression from corp genital organ.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.154-159
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• 1995

To achieve a high aspect ration of metal contact, buried contact solar cell scribe the silicon surface using laser. The Q-switched NdLYAG laser which has 1.064$\mu\textrm{m}$ wavelength use for silicon scribing with 25~40$\mu\textrm{m}$ width and 20~200$\mu\textrm{m}$ depth capabilities. The 2~3% shading losses are very low campared to the screen printing solar cell. In this paper, we investigate the silicon scribing theory and pratice, scribing system for BCSC processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.78-81
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• 1994

The Photovoltaics(PV) industry has been evolving over the last 30 years and expanding because of a rising demand for clean and safe energy. Crystalline silicon solar cells will have increased performance and reduced cost in the future. In this paper solution growth process used to fabricate polycrystalline silicon thin film is considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.497-502
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• 1998

To understand the effect of surface roughness on silicon wafer bonding, a continuum mechanical model is presented. This model is based on Obreimoff's experiment and the contact theory of rough surfaces. The surface energy of silicon was calculated to be much reduced than the theoretical value. Problems are discussed concerning surface film effects and the assumption of constant asperity radius and statistical distribution function.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.63-67
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• 1991

Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.964-967
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• 2002

The effectiveness of silicon nitride SiNx surface passivation is investigated and quantified. This study adopted single-layer antireflection (SLAR) coating of SiNx for efficiency improvement of solar cell. The silicon nitride films were deposited by means of plasma enhanced chemical vapor deposition (PECVD) in planar coil reactor. The process gases used were pure ammonia and a mixture of silane and helium. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment. This films obtained were analyzed in term of hydrogen content, refractive index for gas flow ratio $(NH_3/SiH_4)$, and efficiency of solar cell. The polycrystalline silicon solar cells passivated by silicon nitride shows efficiency above 12.8%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.131-132
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• 2006

We experimentally demonstrated the synthesis of silicon nanoparticles by using high-density ablation plasma prepared by the interaction of an intense pulsed light-ion beam (LIB) with a target. known as the intense pulsed ion beam evaporation (IBE) method. Light emission was obtained from the silicon nanoparticles. It was determined that the ambient gas reaction is very important and useful method to obtain the photoluminescence from the silicon nanoparticles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.176-180
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• 2003

Tri-crystalline silicon (Tri-Si) wafers have three different orientations and three grain boundaries. In this paper, tri-Si wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast multi-crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to 15% whereas the cast multi-Si wafer has efficiency around 14%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.173-176
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• 2004

Silicon thin films on p-type(100) silicon substrate have been prepared by a pulsed laser deposition(PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, silicon thin film has been annealed in nitrogen ambient. Strong blue photoluminescence(PL) has been observed at room temperature. We report the optical properties of silicon thin films with the variation of the deposition parameters.