• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.279-287
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• 2018

Sealants are an important element of modern architecture and serve as a building protection against weathering by providing barriers against ingress of moisture, air, and other materials. Exposure to a variety of environments often reduces lifespan due to changes in physical, chemical and mechanical characteristics, and UV, humidity, and temperature expansion are important issues that are directly related to durability. In this study, a combined deterioration test chamber was developed to simulate the environment of the open air as an instrument for verifying the durability of structural sealing materials indoors. In order to replicate special weather conditions, such as yellow dust, acid rain, and contamination by microorganisms, it was deemed impossible to replicate the outdoor environment by 100 %, and the results of the results of the results of the external exposure test of the structural sealant and the combined deterioration testing device. As a result of the displacement test of the outdoor exposure test, it was determined that the sealant was breaking apart and that it would be smooth, and the displacement would be up to three times greater than the initial material value of 1 year. The displacement test results of the combined deterioration test device show the tendency to deteriorate, decreasing the elasticity and tensile characteristics. In the case of denatured silicon, the current 400 cycles have been completed to confirm 12 months of degradation of the external exposure. The deformation of the test specimen cannot be verified with the naked eye, so it is considered that the conditions of the specimen are more stable than the silicon sealant. As a result of the outdoor exposure test, if the combined deterioration test device is structured and proposed in the relevant guidance or specification, the anticipated lifespan of 12 months in the actual use environment can be verified indoors and below 3 months later, economically.

• Journal of radiological science and technology
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• v.40 no.3
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• pp.461-468
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• 2017

This study measured and compared the protective clothing using Pb used for shielding in a diagnostic X-ray energy range, and the shielding rates of X-ray fusion shielding materials using Si and $TiO_2$. For the experiment, a pad type shielding with a thickness of 1 mm was prepared by mixing $Si-TiO_2$, and the X-ray shielding rate was compared with 0.5 mmPb plate of The shielding rate of shielding of 0.5 mmPb plate 95.92%, 85.26 % based on the case of no shielding under each 60 kVp, 100 kVp tube voltage condition. When the shielding of $Si-TiO_2$ pad was applied, the shielding rate equal to or greater than 0.5 mmPb plate was obtained at a thickness of 11 mm or more, and the shielding rate of 100% or more was confirmed at a thickness of 13 mm in 60 kVp condition. When the shielding of $Si-TiO_2$ pad was applied, the shielding rate equal to or greater than 0.5 mmPb plate was obtained at a thickness of 17 mm or more, and a shielding rate of 0.5 mmPb plate was observed at a thickness of 23 mm in 100 kVp condition. Through the results of this study, We could confirm the possibility of manufacturing radiation protective materials that does not contain lead hazard using various metalic compound and liquid Si. This study shows that possibility of liquid Si and other metalic compound can harmonize easily. Beside, It is flexible and strong to physical stress than Pb obtained radiation protective closthes. But additional studies are needed to increase the shielding rate and reduce the weight.

• Progress in Medical Physics
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• v.15 no.4
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• pp.202-209
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• 2004

Flat panel based digital radiography (DR) systems have recently become useful and important in the field of diagnostic radiology. For DRs with amorphous silicon photosensors, CsI(TI) is normally used as the scintillator, which produces visible light corresponding to the absorbed radiation energy. The visible light photons are converted into electric signal in the amorphous silicon photodiodes which constitute a two dimensional array. In order to produce good quality images, detailed behaviors of DR detectors to radiation must be studied. The relationship between air exposure and the DR outputs has been investigated in many studies. But this relationship was investigated under the condition of the fixed tube voltage. In this study, we investigated the relationship between the DR outputs and X-ray in terms of the absorbed energy in the detector rather than the air exposure using SPEC-l8, an X-ray energy spectrum model. Measured exposure was compared with calculated exposure for obtaining the inherent filtration that is a important input variable of SPEC-l8. The absorbed energy in the detector was calculated using algorithm of calculating the absorbed energy in the material and pixel values of real images under various conditions was obtained. The characteristic curve was obtained using the relationship of two parameter and the results were verified using phantoms made of water and aluminum. The pixel values of the phantom image were estimated and compared with the characteristic curve under various conditions. It was found that the relationship between the DR outputs and the absorbed energy in the detector was almost linear. In a experiment using the phantoms, the estimated pixel values agreed with the characteristic curve, although the effect of scattered photons introduced some errors. However, effect of a scattered X-ray must be studied because it was not included in the calculation algorithm. The result of this study can provide useful information about a pre-processing of digital radiography.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.7
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• pp.464-471
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• 2013

In this study, the resource efficiency and future metal resource requirement in photovoltaic (PV) production system were evaluated by using material balance data and life cycle assesment (LCA) method. As a result, in the resource efficiency of ferrous and non-ferrous metal, lead and tin had higher resource efficiency than other materials in all PV systems (SC-Si, MC-Si, CI(G)S, CdTe). In the resource efficiency of rare metals, gallium and rhenium in silicon system and rhenium and rhodium in thin-film system ranked as the first and second high resource efficiency. In case of rare earth metal, gadolinium and samarium took higher resource efficiency. The results of the future metal resource requirement in PV systems showed that 2,545,670 ton of aluminium, 92,069 ton of zinc, 22,044 ton of copper, 1,695 ton of tin and 31 ton of nickel will be needed by 2030 in South Korea, except resource recycling supplement.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.49-60
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• 2010

Semiconductor packages are increasingly moving toward miniaturization, lighter and high performance. Futhermore, packages become thinner. Thin packages will generate serious reliability problems such as warpage, crack and other failures. Reliability problems are mainly caused by the CTE mismatch of various package materials. Therefore, proper selection of the package materials and geometrical optimization is very important for controlling the warpage and the stress of the package. In this study, we investigated the characteristics of the warpage and the stress of several packages currently used in mobile devices such as CABGA, fcSCP, SCSP, and MCP. Warpage and stress distribution are analyzed by the finite element simulation. Key material properties which affect the warpage of package are investigated such as the elastic moduli, CTEs of EMC molding and the substrate. Geometrical effects are also investigated including the thickness or size of EMC molding, silicon die and substrate. The simulation results indicate that the most influential factors on warpage are EMC molding thickness, CTE of EMC, elastic modulus of the substrate. Simulation results show that warpage is the largest for SCSP. In order to reduce the warpage, DOE optimization is performed, and the optimization results show that warpage of SCSP becomes $10{\mu}m$.

• Journal of the Korean Recycled Construction Resources Institute
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• v.6 no.4
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• pp.119-126
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• 2012

Portland cement production-1.5billion tonnes yearly worldwide-contributes substantially to global atmospheric pollution(7% of total of $CO_2$ emissions). Attempts to increase the utilization of fly ash, by-products from thermal power plant to partially replace the cement in concrete are gathering momentum. But most of fly ash is currently dumped in landfills, thus creating a threat to the environment. Many researches on alkali-activated concrete that does not need the presence of cement as a binder have been carried out recently. Instead, the sources of material such as fly ash, that are rich in Silicon(Si) and Aluminium(Al), are activated by alkaline liquids to produce the binder. Hence concrete with no cement is effect reduction of $CO_2$ gas. In this study, we investigated the influence of the compressive strength of mortar on alkaline activator and curing condition in oder to develop cementless fly ash based alkali-activated concrete. In view of the results, we found out that it was possible for us to make alkali-activated mortar with 70MPa at the age of 28days by using alkaline activator manufactured as 1:1 the mass ratio of 9M NaOH and sodium silicate and applying the atmospheric curing after high temperature at $60^{\circ}C$ for 48hours.

• Science of Emotion and Sensibility
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• v.20 no.2
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• pp.171-178
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• 2017

'Smart Sensibility Mat (SSM)' was developed and manufactured for positive sensibility of newborn with fiber, digital, and sensibility technology to reflect features and advantages of kangaroo care. For tactile stimuli, the tube of the silicon material to provide a constant temperature of $32^{\circ}C$ was inserted into the mat and connected to the water-thermostat. To provide a uniform temperature throughout the mat, the fabric by the inserting conductive yarn was attached to the mat surface. After wrapping the mat with cotton pad, the polyurethane foam used as medicine in order to similar to the human skin was bonded to the surface of the mat. To provide the auditory stimuli of a level of 30dB with mother's heartbeat sounds and voice recorded in advance, the Bluetooth speaker was inserted into the mat. To investigate the effects of SSM, 10 newborns who born within two weeks were involved in this experiment. While the baby was lying on each of the general mat (GM) and SSM, the baby's physiological signals-heart rate, breathing rate, temperature- were measured and then, those were conducted t-test to examine the difference between the signals of SSM and GM. The results were as follows: heart rate (t=8.131, p<.001) and respiratory rate (t=7.227, p<.001) among the physiological signals of SSM decreased significantly than GM within the normal range. Temperature (t=1.062, p=0.292) at SSM showed a tendency to decrease than GM within the normal range. This means the tactile stimuli and the auditory stimuli providing from SSM give stable physiological responses. Thus, SSM leads to have psychological comfort and stability of newborns.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.199-199
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• 2016

Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

• Journal of the Mineralogical Society of Korea
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• v.21 no.2
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• pp.201-208
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• 2008

Ceria ($CeO_2$) becomes one of important functional nanomaterials and a key abrasive material for chemical-mechanical planarization (CMP) of advanced integrated circuits in silicon semi-conductor technology. Two synthetic crystalline ceria (RT735, RT835) are studied by the Rietveld structural refinement to determine crystallite size and microstrain. Rietveld indices of RT735 and RT835 indicate good fitting with $R_p(%)=8.50$, 8.34; $R_{wp}(%)=13.4$, 13.5; $R_{exp}(%)=11.3$, 11.5; $R_B(%)=2.21$, 2.36; S(GofF: Goodness of fit)=1.2, 1.2, respectively. $CeO_2$ with space group Fm3m show a=5.41074(2), 5.41130(6) ${\AA}$, V=158.406(1), 158.455(3)${\AA}^3$ in dimension. Detailed Rietveld refinement reveals that crystallite size and microstrain are 37.42(1) nm, 0.0026 (RT735) and 72.80(2) nm, 0.0013 (RT835), respectively. It also shows that crystallite size and microstrain of ceria are inversely proportional to each other.