• Title/Summary/Keyword: Silicon Material

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Investigation of anisotropic texturing for silicon solar cells with sodium carbonate solutions (탄산나트륨용액을 이용한 실리콘 태양전지의 이방성 텍스쳐링에 관한 연구)

  • Lee, Eun-Joo;Kim, Do-Wan;Lee, Hyun-Woo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.177-178
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    • 2006
  • We investigate anisotropic texturing method for crystalline silicon solar cells with sodium carbonate solutions. Texturing temperature have a large effect on the density of pyramid. The dependence of the surface reflectance on solution temperature and the etching time was investigated. The surface morphology was observed by scanning electron microscope and the surface reflectance was evaluated. The reflection from the silicon surface in the wavelength range 400 to 1000nm is reduced to about 12%.

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Study on the ultra thin film of silicon oxyinitride deposited by plasma - assisted $N_2O$ oxidation in ICP-CVD reactor (ICP-CVD 반응기 내에서 $N_2O$ 플라즈마 산화법을 이용하여 증착된 ultra thin silicon oxynitride films 에 관한 연구)

  • Hwang, Sung-Hyun;Jung, Sung-Wook;Yi, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.161-162
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    • 2006
  • Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.

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Cryogenic Machining of Open-Cell Silicone Foam (액화질소를 이용한 오픈 셀 실리콘 폼의 냉동 절삭조건 최적화)

  • Hwang, Jihong;Cho, Kwang-Hee;Park, Min-Soo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.1
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    • pp.32-37
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    • 2014
  • Open-cell silicon foam is difficult to cut using conventional machining processes because of its low stiffness. That is, open-cell silicon foam is easily pressed down when the tool is engaged, which makes it difficult to remove the material in the form of chip. This study proposes an advanced method of machining open-cell silicon foam by freezing the material using liquid nitrogen. Furthermore, the machining conditions are optimized to maximize the efficiency of material removal and minimize the usage of liquid nitrogen by conducting experiments under various machining conditions. The results show that open-cell silicone foam products with free surface can be successfully machined by employing the proposed method.

Sensing Properties of Porous Silicon Layer for Organic Vapors (다공질 실리콘의 유기가스 검지 특성)

  • 김성진;이상훈;최복길
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.963-968
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    • 2002
  • In this work, porous silicon (PS) layer is investigated as a sensing material to detect organic vapors such as ethanol (called alcohol), methanol, and acetone in low concentrations. To do this, PS sensors were fabricated. They have a membrane structure and comb-type electrodes were used to detect the change of electrical resistance effectively. PS layer on Si substrates was formed by anodization in HF solution of 25%. From fabricated sensors, current-voltage (Ⅰ-Ⅴ) curves were measured for gases evaporated from 0.1 to 0.5% organic solution concentrations at 36$\^{C}$. As the result, all curves showed rectifying behavior due to a diode structure between Si and the PS layer. The conductance of most sensors increased largely at high voltage of 5V, but the built-in potential on the measured Ⅰ-Ⅴ curve was lowered inversely by the adsorption effect of the organic vapors with high dipole moment.

Trends of Power Semiconductor Device (전력 반도체의 개발 동향)

  • Yun, Chong-Man
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.3-6
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    • 2004
  • Power semiconductor devices are being compact, high performance and intelligent thanks to recent remarkable developments of silicon design, process and related packaging technologies. Developments of MOS-gate transistors such as MOSFET and IGBT are dominant thanks to their advantages on high speed operation. In conjunction with package technology, silicon technologies such as trench, charge balance and NPT will support future power semiconductors. In addition, wide band gap material such as SiC and GaN are being studies for next generation power semiconductor devices.

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Investigation of Micro-tribological Properties of Coated Silicon Wafer under Light Load (코팅된 실리콘웨이퍼의 미소 마찰마멸특성에 관한 연구)

  • 차금환;김대은
    • Tribology and Lubricants
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    • v.15 no.1
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    • pp.29-38
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    • 1999
  • In recent years, the tribological behavior of coated ceramic material has been the issue of much interest. Particularly, the understanding of the tribological performance of thin film under light load is important for its potential in applications of MEMS. The friction and wear behavior of ceramic material that occur at light load depends on several factors such as surface roughness, contact area and material properties. In this work, the tribological behavior of coated silicon under light load and low speed was investigated. Particularly, the effects of coated materials, humidity and undulated surface were also studied. The results show that the effect of humidity on fiction was influenced by the apparent area of contact between the two surfaces. Also both adhesive and abrasive wear occurred depending on the sliding condition. Finally, undulations on the silicon wafer were found to be effective in trapping wear particles and resulted in the reduction of friction.

Silicon Thermoelectric Device Technology (실리콘 열전소자 기술)

  • Jang, Moongyu
    • Vacuum Magazine
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    • v.1 no.4
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    • pp.21-24
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    • 2014
  • Thermolectric devices could convert temperature gradient into electricity (Seebeck effect) and electric power into temperature gradient across the themoelectric element (Peltier effect). $Bi_2Te_3$ has been widely used as thermoelectric material for more than 40 years, due to the superior thermoelctric characteristics. However, Bi and Te materials are predicted to face supply shortage, giving strong necessity for the development of new thermoelctric materials. Based on the theoretical prediction, nanostructure are expected to give dramatic enhnacement of thermoelectirc characteristics by controlling phonon propagation. Thus, silicon, which had been considered as improper material for thermoelectricity, is now being considered as strong cadidate material for thermoelectricity. This review will focus on the nanotechnology applied research activities in silicon as thermoelectric materials.

Change master cast by hardening method to position of tray after impression taking (인상채득 후 경화시 트레이의 위치에 따른 주모형의 변화)

  • Lee, Jung Ae
    • Journal of Korean society of Dental Hygiene
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    • v.8 no.2
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    • pp.53-66
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    • 2008
  • There was to purpose of this study improves analyzing cause that prosthesis brings bite engaging that is inaccurate in patient's mouth, when supposed that all conducts that do in operatory and dental laboratory are perfect. Impression did check bite by alginate impression material and polymerization style silicon impression material that use usually in presence at a sickbed Irreversibility, hydrocolloid, alginate impression material washed in flowing water and poured anhydrite after wait about 8 minutes so that region that charge interest after impression check bite may become undoing. And hydrophile property addition polymerization style impression material poured anhydrite after blow 30 considering impression material dwell time and H2 gas occurrence time (5~15 minute) after have washed in flowing water. I got each 7 models, result that manufactures total 28 and measures by third dimension measuring instrument (Meteo, Korea) following sequence curing in tray holder and floor 1, By Alginate impression when is hardened in tray holder and when is hardened in the floor after do check bite, SPH 4, SPH5 all as there is synonymy appeared(P<0.05). By in case do not use average 0.1741 in case use tray holder in 0.0447 SPH5s in case do not use average 0.2838 pastas in case use tray holder in SPH4 0.0309, When did not use both SPH4 and SPH5 tray holder, when used tray holder, 1 appeared more greatly. 2. By amity sex addition polymerization style silicon impression when is hardened in tray holder after do check bite and when is hardened in the floor SPH 4, a11 of the SPH5s very big synonymy be(P>0.05). And in case use tray holder in 0.000657 pasta SPH5s in case do not use average 0.000129 pastas in case use tray holder in SPH4 average 0.000114 pastas, by in case do not use 0.000757, I appeared more greatly when used tray when did not use both SPH4 and SPH5 tray holder, but 1 appeared is not level to keep in mind(Table 8~9). 3 SPH4 was looked very big mindfulness in model that manufacture doing impression check bite by Alginate and model that do impression check bite by amity sex accessory penalty silicon without using tray holder(P< 0.001). I use tray holder and SPH4 did not appear synonymy in model that manufacture doing impression check bite by Alginate and model that do impression check bite by amity sex accessory penalty silicon(P>0.05). Study finding of above when see synthesis Alginate certainly tray holder use must and I could know that hardening method does not exert big influence on volume stability if remove impression sieve of excess because amity sex accessory penalty silicon passes over tray, Also, Alginate impression material previewed can get heading a conspiracy style that volume stability of accessory penalty silicon impression material degree is if use tray holder.

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The research of anti-reflection coating using porous silicon for crystalline silicon solar cells (다공성 실리콘을 이용한 결정질 실리콘 태양전지 반사방지막에 관한 연구)

  • Lee, Jaedoo;Kim, Minjeong;Lee, Soohong
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.90.2-90.2
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    • 2010
  • The crystalline silicon solar cells have been optical losses. but it can be reduced using light trapping by texture structure and anti-reflection coating. The high reflective index of crystalline silicon at solar wavelengths(400nm~1000nm) creates large reflection losses that must be compensated for by applying anti-reflection coating. In this study, the use of porous silicon(PSi) as an active material in a solar cell to take advantage of light trapping and blue-harvesting photoluminescence effect. Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. We expect our research can results approaching to lower than 10% of several reflectance by porous silicon solar cells.

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