• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.377-380
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• 2008

Ground state structures and ring flipping transition states of eight- and seven-membered silicon containing heterocyclic compounds such as dithienodisilacyclooctatriene and oxadithienodisilacycloheptadiene derivatives, respectively have theoretically been investigated. Although the bithienylene moiety of the derivatives does not change the ground state structures, they significantly increase the ring flipping barrier by 13-17 kcal/mol in the case of the eight-membered rings (2, 3, and 4) in comparison with that of silicon containing heterocyclic compound 6, chosen as a model. The same moiety increases the flipping barrier of seven-membered ring (5) is only slightly (3.3 kcal/mol) in comparison with that of model compound 7. Hence, it has been concluded that not only the existing ring strain of eight-membered ring but also the bithienylene moiety collectively increases the ring flipping barrier so as to prevent such conformational changes explaining anomalous NMR behaviour of dithienodisilacyclooctatriene derivatives (2-4). In contrast, the effect of substituents R1 and R2 at the olefinic carbons of the eight-membered ring on the flipping barrier turned out to be mild.

• 대한화학회지
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• 제9권1호
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• pp.61-65
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• 1965

有機클로로酸, 또는 에스타와 各種金屬(亞鉛, 硅素, 마그네슘, 錫)과의 여러 溶媒存在下(아세트나이트라일, 디옥센 및 토루엔)의 反應에서 얻은 反應生成物, 또는 反應系中의 金屬分布狀態를 (n,${\gamma}$)反應으로 製造한 各種放射性 金屬트레이서를 使用하여 決定하였다. 有機클로로 金屬 콤푸렉스의 溶解度는 親水性溶媒에서는 顯著하게 增加하였으며, 無極性溶媒에는 減少하였다. 이 事實은 回收된 金屬, 또는 回收된 金屬混合物의 水洗液中의 金屬分布狀態의 增加로서 確認되었다. 카보닐化合物 存在下에서 反應시켰 때에도 같은 事實을 나타내었다. 親水性溶媒中의 金屬콤푸렉스의 溶解度는 亞鉛, 硅素, 錫 및 마그네슘이 順序로 減少되었으며 無極性溶媒下에서는 硅素, 錫, 마그네슘 및 亞鉛의 順으로 減少되었다. 有機할로겐化合物과 金屬과의 反應生成物로 普通 豫期되는 有機金屬化合物은 全反應을 通하여 거의 없었다. 反應結果를 論議하였으며, 本反應過程에서 觀察한 溶媒의 影響에 關하여 論及하였다.

• Korean Chemical Engineering Research
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• 제59권1호
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• pp.35-41
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• 2021

차세대 리튬이차전지용 음극활물질로 각광을 받고 있는 실리콘은 높은 이론용량을 가지고 있어 상용화를 하기 위해 많은 연구가 진행되었다. 하지만 실리콘은 충방전시 부피팽창이 심하고, 전기전도도가 낮은 단점을 가지고 있다. 이러한 문제를 해결하기 위해서 실리콘 표면에 SiO2를 형성시키고, 탄소를 코팅함으로써 실리콘의 부반응을 억제시키고 전기전도도를 향상시켰다. 추가적으로 CNF와 CNT를 복합적으로 첨가하여 부피팽창에 대한 완충효과를 부여하고 전기전도도를 향상시켰다. 제조된 샘플은 XRD, SEM, EDS로 물리적 특성 분석을 실시하였으며, 전기화학적 특성은 전기전도도, EIS, CV 그리고 사이클 테스트를 통해 분석하였다. (Si/SiO2/C)+CNT&CNF 복합체의 경우 다른 샘플들에 비하여 높은 전기전도도 및 낮은 전하전달저항을 보여주었으며, 사이클테스트 결과 첫 번째 사이클에서 1528 mAh/g 그리고 50번째 사이클에서 1055 mAh/g의 용량을 가졌으며 83%의 용량 유지율을 보여주었다.

• Current Photovoltaic Research
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• 제5권3호
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• pp.83-88
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• 2017

The growth of intermetallic compounds is an important factor in the reliability of solar cells. Especially, the temperature change in the soldering process greatly affects the thickness of the intermetallic compound layer. In this study, we investigated the intermetallic compound growth by Sn-diffusion in solder joints of solar cells. The thickness of the intermetallic compound layer was analyzed by IR lamp power and hot plate temperature control, and the correlation between the intermetallic compound layer and the adhesive strength was confirmed by a $90^{\circ}$ peel test. In order to investigate the growth of the intermetallic compound layer during isothermal aging, the growth of the intermetallic compound layer was analyzed at $85^{\circ}C$ and 85% for 500 h. In addition, the activation energy of Sn was calculated. The diffusion coefficient of the intermetallic compound layer was simulated and compared with experimental results to predict the long-term reliability.

• 한국임상수의학회지
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• 제22권2호
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• pp.100-107
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• 2005

This study was carried out to investigate the physical and chemical properties of teat cup liners. The hardness of the liners was $50\~67$, and their fatigue to failure 38-1,185 cycles. The elongation and tensile strength of these liners were about $134 kgf/cm^2\;and\;473\%$, respectively. The infrared spectrum and the gas chromatogram revealed that the liner A was consisted of NR, SBR, and BR, with a composition ratio of 60:20:20 (part per hundred rubber). The raw rubber materials used for liners B to G, on the other hand, were NBR only. However, the liner H was made of silicon rubber. The thermogravimetric analysis showed that the liners tested in this study contained raw rubber material, carbon black, organic compounds and metallic compounds.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.15-15
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• 2011

As you know, boron compounds, borax ($Na_2B_4O_5(OH)_4{\cdot}8H_2O$) etc. were known thousands of years ago. As for natural boron, it has two naturally occurring and stable isotopes, boron 11 ($^{11}B$) and boron 10 ($^{10}B$). The neutron absorption $^{10}B$ is included about 19~20% with 80~81% $^{11}B$. Boron is similar to carbon in its capability to form stable covalently bonded molecular networks. The mass difference results in a wide range of ${\beta}$ values between the $^{11}B$ and $^{10}B$. The $^{10}B$ isotope, stable with 5 neutrons is excellent at capturing thermal neutrons. For example, it is possible to decrease a thermal neutron required for the nuclear reaction of uranium 235 ($^{235}U$). If $^{10}B$ absorbs a neutron ($^1n$), it will change to $^7Li+^1{\alpha}$ (${\alpha}$ ray, like $^4He$) with prompt ${\gamma}$ ray from $^{11}B$ $^{11}B$ (equation 1). $$^{10}B+^1n\;{\rightarrow}\;^{11}B\;{\rightarrow}\; prompt \;{\gamma}\;ray (478 keV), \;^7Li+4{\alpha}\;(4He)\;\;\;\;{\cdots}\; (1)$$ If about 1% boron is added to stainless steel, it is known that a neutron shielding effect will be 3 times the boron free steel. Enriched boron or $^{10}B$ is used in both radiation shielding and in boron neutron capture therapy. Then, $^{10}B$ is used for reactivity control and in emergency shutdown systems in nuclear reactors. Furthermore, boron carbide, $B_4C$, is used as the charge of a nuclear fission reaction control rod material and neutron cover material for nuclear reactors. The $B_4C$ powder of natural B composition is used as a charge of a control material of a boiling water reactor (BWR) which occupies commercial power reactors in nuclear power generation. The $B_4C$ sintered body which adjusted $^{10}B$ concentration is used as a charge of a control material of the fast breeder reactor (FBR) currently developed aiming at establishment of a nuclear fuel cycle. In this study for new boron compound, silicon boride ceramics for capturing thermal neutrons, preparation and characterization of both silicon tetraboride ($SiB_4$) and silicon hexaboride ($SiB_6$) and ceramics produced by sintering were investigated in order to determine the suitability of this material for nuclear power generation. The relative density increased with increasing sintering temperature. With a sintering temperature of 1,923 K, a sintered body having a relative density of more than 99% was obtained. The Vickers hardness increased with increasing sintering temperature. The best result was a Vickers hardness of 28 GPa for the $SiB_6$ sintered at 1,923K for 1 h. The high temperature Vickers hardness of the $SiB_6$ sintered body changed from 28 to 12 GPa in the temperature range of room temperature to 1,273 K. The thermal conductivity of the SiB6 sintered body changed from 9.1 to 2.4 W/mK in the range of room temperature to 1,273 K.

• 한국화재소방학회논문지
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• 제33권2호
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• pp.9-19
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• 2019

실리콘 화합물 4종으로 처리한 편백목재 시험편의 연소특성에 관한 실험을 ISO 5660-1 표준에 따른 콘칼로리미터를 이용하여 수행하였다. 난연재는 소듐실리케이트와 아미노실란을 이용하여 합성하였다. 3-aminopropyltrimethoxysilane (APTMS), 3-(2-aminoethylamino)propylmethyldimethoxysilane (AEA-PMDMS), 3-(2-aminoethylamino)propyltrimethoxysilane (AEAPTM)을 실란 화합물로 사용하였다. 외부열유속 $50kW/m^2$에서 연소후 측정된 실리콘 졸로 처리한 시험편의 착화시간은 9~11 s로 얻어졌으며 공시편보다 3~5 s 지연되었다. 최대열방출율은 공시편과 비교하여 5~20% 감소되었고 화재초기위험성은 AEAPMDMS가 가장 높았다. 총열방출량은 1~22% 감소되었다. 화재성능지수(FPI)는 공시편보다 1.5~2.2배 증가하였다. 화재성장지수(FGI)는 AEAPMDMS로 처리된 시험편은 20% 증가하였고 나머지 시편은 93~94% 감소하였다. 따라서 실리콘화합물로 처리한 목재의 화재위험성은 열위험성 측면에서 개선되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of Microbiology and Biotechnology
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• 제5권1호
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• pp.41-47
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• 1995

Biodegradation of toluene in liquid effluent stream was carried out using biofilms of Pseudomonas putida formed on celite particles in the bubble column bioreactor. Silicon rubber tubing was installed at the bottom of the bioreactor and liquid toluene was circulated within the tubing. Toluene diffused out of the tube wall and was transferred into the culture broth where degradation by biofilms occurred. The operating variables affecting the formation of biofihns on celite particles were investigated in the bubble column bioreactor, and it was found that formation of bifilm is favored by high dilution rate and supply rate of carbon source which stimulate the growth of initially attached cells. Continuous biodegradation of toluene using biofilms was stablely conducted in the bioreactor for more than one month without any significant fluctuation, showing a removal efficiency higher than 95% at the toluene transfer rate of 1.2 g/L/h.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.450-452
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• 2005

The ion beam alignment technique is one of the potential and fascinating methods. However, there are merely a few reports about aligning nematic liquid crystals (NLCs) horizontally for in-plane switching mode (IPS) by means of low energy ion beam exposure on inorganic materials such as DLC. In this study, we have investigated the tilted vertical alignment of NLC by the ion beam technique on the thin films of various amorphous silicon compounds as new inorganic alignment materials. Appropriate pretilt angles of NLC with preferred orientation on these thin films were achieved. And the electro-optic property of vertically aligned single domain cells has been investigated.