• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2002.10b
• /
• pp.443-444
• /
• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.235-239
• /
• 2001

In recent years, as Chemical Mechanical Planarization(CMP) has been routinely utilized in integrated circuit(IC) fabrication, the consumption of slurry, main consumable in a CMP process, is greatly increased. Thus the reprocess of CMP slurries has been actively considered in the industry to reduce cost-of-consumable (COC). The main purpose of this study was to recycle the used oxide slurry using filters as a new method. As a result, Ultra Fine(UF) Filter could distinguish silica from the used oxide slurry and Reverse Osmosis(RO) Filter could distinguish Deionized(DI) Water and chemistry from chemistry solution. The tetraethylorthosilicate removal rate was almost the same as the number of recycle polishing was increased, when it was modified by slightly adding new SS-12 slurry. The microscratch didnt found as the number of recycle polishing was increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05d
• /
• pp.105-108
• /
• 2003

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• 한국생물공학회:학술대회논문집
• /
• 2003.04a
• /
• pp.676-679
• /
• 2003

Long time over 6 month was required to form granuler sludge, which is critically necessary for UASB reactor. By feeding both high molecular cationic polymer and anionic silica sol to conventional digestion sludge, granular sludge was obtained within 5 minutes. Succession adaptation was performed for granular sludge for 30 days. $80{\sim}90%$ COD removal efficiency was shown with granular sludge, which was comparable with that of typical UASB granular sludge.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
• /
• 2003.09a
• /
• pp.73-77
• /
• 2003

Red mud is a waste material formed during the production of alumina when the bauxite ore is subjected to caustic leaching. It is a brick-red colored highly alkaline (pH 10-12) sludge containing mostly oxides of iron, aluminum, titanium, and silica. Red mud, due to its high aluminum, iron, and calcium contents, has been suggested as a cheap adsorbent for removal of toxic metals (e.g., As, Cr, Pb, Cd) as well as for water or wastewater treatment. The basic advantage of red mud is its versatility in application. This study was conducted to evaluate the effect of red mud on stabilization and fixation of heavy metals (such as Pb, Cu, C $r^{6+}$, Cd, Zn) contained in the Al-coating sludge and soil. The results showed that the concentration of heavy metals leached from the treated sludge and soil was low, meeting the regulatory permit level.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1880-1884
• /
• 2008

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.18-22
• /
• 2002

CMP(chemical mechanical polishing) process has attracted as an essential technology of multilevel interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused that it has how to reduce the consumption of raw slurry. In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio was investigated. Finally, CMP the characteristics as a function of silica($SiO_2$) abrasive contents were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.70-71
• /
• 2005

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It is investigated the performance of ITO-CMP process using commercial silica slurry with the various conditioning temperatures by control of de-ionized water (DIW). Removal rate of ITO thin film was improved after CMP process after pad conditioning at the high temperature by improved exclusion of slurry residues in polishing pad..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.23-26
• /
• 2002

In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of diluted slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• Journal of the Korean Ceramic Society
• /
• v.31 no.3
• /
• pp.330-336
• /
• 1994

High strength cement composites (W/C=0.1) were prepared by using various blending materials such as SiC whisker and white carbon (hydrated silica: SiO2·nH2O). The effect of various blending materials on the microstructure and strength of the hardened cement paste were investigated in the view of fracture mechanics. The plain specimen showed 101 MPa of flexural strength, 81 GPa of Young's modulus and 1.32 MPam1/2 of fracture toughness. When the blending materials were added to the composites, their values were enhanced to about 110∼138 MPa, 95∼146 GPa and 1.32∼1.87MPam1/2 respectively. The improvement of the mechanical strength for the hardened cement paste may be due to the removal of macropores, the reduction of total porosity, pozzolanic reaction and the increase of various fracture toughening effect.