• 센서학회지
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• 제15권5호
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• pp.371-377
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• 2006

Nano porous, transparent silica aerogels monoliths were prepared under ambient drying (1 atm, $270^{\circ}C$) condition by the combination of sol-gel process and surface modification with subsequent heat treatment. Three kinds of solvent, n-hexane, n-heptane and xylene, were selected in the point view of low surface tension and vapor pressure in order to restrain a formation of cracks during drying. Crack-free silica aerogels with over 93 % of porosity and below $0.14g/cm^3$ of density were obtained by solvent exchange and surface modification under atmosphere condition. Optimum solvent was confirmed n-heptane among these solvents through estimation of FT-IR, TGA, BET and SEM. Modified silica aerogel exhibited a higher porosity and pore size compare to unmodified aerogels. Hydrophobicity was also controled by C-H and H-OH bonding state in the gel structure and heat treatment over $400^{\circ}C$ effects to the hydrophobicity due to oxidation of C-H radicals.

• 공업화학
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• 제19권6호
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• pp.685-689
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• 2008

충전제의 종류 및 분산 시간에 따른 박막의 특성 평가를 실시하였으며, 그 결과 투과도 측면에서 유리한 중공 실리카를 선택하여 충전제의 함량별 그리고 코팅 두께별 haze, 투과도, 그리고 광택도에 대한 실험을 각각 실시하였다 그 결과, 충전제의 함량이 증가할수록 haze값은 증가하고 광택도 값은 이와는 반대로 감소하였다. 또한, 필름 표면에의 코팅 두께가 증가할수록 충전제의 함량변화 때와는 정 반대로 haze값은 감소하고 광택도는 증가하였다. 그리고 투과도의 경우에는 두 가지 경우 모두 거의 일정한 수준으로 변화를 보이지 않았다. 결론적으로 충전제로서 중공 실리카를 사용할 경우 함량 증가와 투과도면에서 매우 유리함을 알 수 있었다.

• 한국재료학회지
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• 제21권9호
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• pp.482-485
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• 2011

$La_{0.6}Sr_{0.4}MnO_3$ (LSMO) thin films, which are known as colossal magnetoresistance materials, were prepared on fused silica thin films by conventional RF magnetron sputtering, and the interfacial reactions between them were investigated by rapid thermal processing. Various analyses, namely, X-ray diffraction, transmission electron microscopy combined with energy adispersive X-ray spectrometry, and secondary ion mass spectrometry, were performed to explain the mechanism of the interfacial reactions. In the case of an LSMO film annealed at $800^{\circ}C$, the layer distinction against the underplayed $SiO_2$ was well preserved. However, when the annealing temperature was raised to $900^{\circ}C$, interdiffusion and interreaction occurred. Most of the $SiO_2$ and part of the LSMO became amorphous silicate that incorporated La, Sr, and Mn and contained a lot of bubbles. When the annealing temperature was raised to $950^{\circ}C$, the whole stack became an amorphous silicate layer with expanded bubbles. The thermal instability of LSMO on fused silica should be an important consideration when LSMO is integrated into Si-based solid-state devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 한국세라믹학회지
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• 제39권9호
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• pp.896-901
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• 2002

FHD(Flame Hydrolysis Deposition)공정은 화염 형성에 관여하는 장비의 조건들과 그에 따른 다양한 공정인자에 의하여 박막의 조성이 결정되며, 증착된 막을 치밀화하는 첨가물의 증발로 인해 열처리공정에서 조성이 변화되므로 공정인자로부터 최종적인 광도파막의 조성을 예측하는 것은 매우 어렵다. 본 연구에서는 FHD 공정에서 첨가가스의 유량을 제어하여 박막의 조성 및 광학적 특성을 예측할 수 있는 공정 분석의 기초자료를 제공하기 위하여 FTIR(Fourier Transformation Infrared Spectroscopy)측정과 ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry)측정을 통해 실리카 막의 조성분석에 대한 연구를 수행하였다. FTIR 흡수 스펙트럼을 통해 실리카 막에 존재하는 Si-O, B-O band를 측정하고 정성적 농도변화를 관찰 하였고, ICP-AES를 통해 Boron의 농도를 정량적으로 측정하였다. 이 두 결과로부터 FTIR을 이용한 정량적 조성분석의 기초자료인 B-O band의 흡광계수를 구하였다.

• 한국재료학회지
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• 제15권6호
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• 폴리머
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• 제36권5호
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• pp.662-667
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• 2012

평판 디스플레이에 사용되는 PET 필름의 광학적 특성을 알아보기 위하여 필름 표면 굴절률, 필름 표면조도 및 필름 내부입자가 광투과율에 미치는 영향을 알아 보았다. 필름표면에 굴절률이 낮은 코팅층을 형성함에 따라 필름의 광투과율이 향상되었고, 최대의 광투과율을 가지는 코팅두께가 있음을 확인하였다. 표면 거칠기의 영향에 대해서는 표면조도를 나타내는 Ra를 입사 파장의 1/4 이하로 조절한 경우 광손실이 발생되지 않았다. 필름 내 무기입자는 입사된 광의 흡수 및 산란을 발생시켜 광손실을 증가시켰다.