• 한국응용과학기술학회지
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• 제26권3호
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• pp.288-296
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• 2009

In this study, the silica-based hybrid material with high barrier property was prepared by incorporating ethylene-vinyl alcohol (EVOH) copolymer, which has been utilized as packaging materials due to its superior gas permeation resistance, during sol-gel process. In preparation of this EVOH/$SiO_2$ hybrid coating materials, the (3-glycidoxy-propyl)-trimethoxysilane (GPTMS) as a silane coupling agent was employed to promote interfacial adhesion between organic and inorganic phases. As confirmed from FT-IR analysis, the physical interaction between two phases was improved due to the increased hydrogen bonding, resulting in homogeneous microstructure with dispersion of nano-sized silica particles. However, depending on the range of content of added silane coupling agent (GPTMS), micro-phase separated microstructure in the hybrid could be observed due to insufficient interfacial attraction or possibility of polymerization reaction of epoxide ring in GPTMS. The oxygen barrier property of the mono-layer coated BOPP (biaxially oriented polypropylene) film was examined for the hybrids containing various GPTMS contents. Consequently, it is revealed that GPTMS should be used in an optimum level of content to produce the high barrier EVOH/$SiO_2$ hybrid material with an improved optical transparency and homogeneous phase morphology.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• 대한환경공학회지
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• 제29권8호
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• pp.915-921
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• 2007

본 연구는 매립가스내 siloxanes 측정의 기초 연구로서 국내 매립지를 대상으로 하여 용매흡수법으로서의 최적 용매를 선정하고자 수행하였으며, n-hexane, acetone 및 methanol을 흡수용매로 하여 각 용매의 siloxanes 검출 특성을 비교 분석하였다. 연구결과 표준물질의 GC분석에서 사용된 3가지 흡수용매 중 methanol이 용매와 silane 피크의 겹침현상이 발생하지 않아 분리능이 가장 우수하게 나타났다. 검출되는 siloxanes 농도는 흡수용매에 따라 최대 2.6배의 농도차를 보였으며, 포집유속과 포집 임핀저 단수에 대한 의존성에 대해서도 높은 것으로 나타났다. Methanol은 siloxanes 총 농도가 가장 높을 뿐만 아니라 휘발성이 적어 임핀저 단별 흡수에서도 가장 이상적인 형태를 보여주었으며, 가장 낮은 상대표준편차를 나타내 실험대상 매립지에 가장 적합한 것으로 나타났다. 그러나 용매의 적합성은 매립지의 쓰레기 성상, 매립이력에 따라 다를 수 있다고 판단된다.

• 대한전자공학회논문지
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• 제27권10호
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• pp.113-123
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• 1990

저압화학증착 반응기에서 $WF_{6}$와 $SiH_{4}$를 사용해 단결정 실리콘 웨이퍼에 텅스텐 박막을 증착시키는 실험을 $250-400^{\circ}C$에서 하였다. 텅스텐 박막이 증착되는 속도는 기상에서 기판표면으로 반응기체가 이동하는 과정에 의해 결정되는 것으로 나타났으며 생성된 박막에서는 약 $3{\%}$ 정도의 실리콘이 함유되어 있는 것으로 나타났다. 증착온도가 높아질수록 박막의 결정성이 뚜렷해지고 grain의 크기도 커지는 것으로 나타났다. 증착된 박막의 비저항은 $7~25{\mu}{\Omega}-cm$ 정도이며 증착온도가 높아질수록 작아지는 것으로 나타났다. 테이프 테스트에 의해 접합도를 측정한 결과 증착온도가 높을수록 접합도가 좋아지는 것으로 나타났다. 반응생성물을 분석한 결과 HF가 생성되는 반응보다는 $SiF_{4}$와 수소가 발생하는 반응이 일어나는 것으로 관측되었다.

• 공업화학
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• 제10권7호
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• pp.985-989
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• 1999

유기 실란화합물을 사용하여 실리카($SiO_2$)박막을 감압 유기금속 화학증착법(LPMOCVD)으로 제조하였다. 원료로는 triethyl orthosilicate(TRIES)를 사용하였다. 실험조건은 반응기의 출구압력을 1~100 torr, 반응온도는 $600{\sim}900^{\circ}C$로 하였다. 높은 반응온도와 원료농도에서는 $SiO_2$가 빠른 성장속도를 나타내었다. 마이크로 스케일 트랜치에서 층덮임이 좋게 나타났는데, 이것은 응축된 다량체들이 트랜치쪽으로 유동하는 현상 때문으로 생각되었다. 원료가스가 중합반응을 하여 다량체(2량체, 3량체, 4량체 등)들이 생성되고, 그 다량체들이 확산하여 고체표면에서 응축되는 반응경로를 따를 것으로 추정된다. 반응관의 출구에서 기상중의 화학종들을 사극질량분석기로 분석한 결과, 반응온도 $650{\sim}700^{\circ}C$에서는 단량체, 원료가스의 2량체, 고분자들의 피크가 관측되었다. 고온($900^{\circ}C$)에서는 거의 모든 원료가스와 중간체(중합된 다량체) 분자들이 산화되었거나 차가운 관벽에 응축되어 고분자들의 피크가 없어졌다.

• 멤브레인
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• 제19권1호
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• pp.19-24
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• 2009

졸-겔 공정은 비교적 간단하고 사용이 편리하며 저렴한 설비투자비가 소요되면서도 우수한 물성 및 차단특성을 갖는 코팅 박막을 얻을 수 있다는 장점이 있다. 졸-겔 공정으로 코팅된 필름은 산소 등의 영향에 의해 부패되기 쉬운 식품, 음료, 약품, 의약품 등의 포장재나 단열제로 응용 가능하다. 본 연구에서는 aluminum isopropoxide를 출발물질로 하여 alumina sol을 제조한 후 실란 커플링제를 첨가하여 코팅 용액을 제조하였다. 또한, 제조된 alumina sol 용액을 이축연신 폴리프로필렌(BOPP)에 코팅하여 복합 필름을 만들고 산소 투과 특성을 측정한 결과 순수한 BOPP에 비해서 산소 투과도가 약 85% 정도 감소되는 효과를 보였다.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• 한국재료학회지
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• 제23권12호
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• pp.702-707
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• 2013

High-quality ${\beta}$-silicon carbide (SiC) coatings are expected to prevent the oxidation degradation of carbon fibers in carbon fiber/silicon carbide (C/SiC) composites at high temperature. Uniform and dense ${\beta}$-SiC coatings were deposited on carbon fibers by low-pressure chemical vapor deposition (LP-CVD) using silane ($SiH_4$) and acetylene ($C_2H_2$) as source gases which were carried by hydrogen gas. SiC coating layers with nanometer scale microstructures were obtained by optimization of the processing parameters considering deposition mechanisms. The thickness and morphology of ${\beta}$-SiC coatings can be controlled by adjustment of the amount of source gas flow, the mean velocity of the gas flow, and deposition time. XRD and FE-SEM analyses showed that dense and crack-free ${\beta}$-SiC coating layers are crystallized in ${\beta}$-SiC structure with a thickness of around 2 micrometers depending on the processing parameters. The fine and dense microstructures with micrometer level thickness of the SiC coating layers are anticipated to effectively protect carbon fibers against the oxidation at high-temperatures.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.

• 전기학회논문지
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• 제66권2호
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• pp.370-378
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• 2017

A fluid model of 2D axis-symmetry based on inductively coupled plasma (ICP) reactor using $N_2/NH_3/SiH_4$ gas mixture has been developed for hydrogenated silicon nitride ($SiN_x:H$) deposition. The model was comprised of 62 species (electron, neutral, ions, and excitation species), 218 chemical reactions, and 45 surface reactions. The pressure (10~40 mTorr) and gas mixture ratio ($N_2$ 80~96 %, $NH_3$ 2~10 %, $SiH_4$ 2~10 %) were considered simulation variables and the input power fixed at 1000 W. Different distributions of electron, ions, and molecules density were observed with pressure. Although ionization rate of $SiH_2{^+}$ is higher than $SiH_3{^+}$ by electron direct reaction with $SiH_4$, the number density of $SiH_3{^+}$ is higher than $SiH_2{^+}$ in over 30 mTorr. Also, number density of $NH^+$ and $NH_4{^+}$ dramatically increased by pressure increase because these species are dominantly generated by gas phase reactions. The change of gas mixture ratio not affected electron density and temperature. With $NH_3$ and $SiH_4$ gases ratio increased, $SiH_x$ and $NH_x$ (except $NH^+$ and $NH_4{^+}$) ions and molecules are linearly increased. Number density of amino-silane molecules ($SiH_x(NH_2)_y$) were detected higher in conditions of high $SiH_x$ and $NH_x$ molecules density.