• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.103-107
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• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

• Nuclear Engineering and Technology
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• 제48권2호
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• pp.533-544
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• 2016

This paper provides a reference to determine the seal performance of metallic O-rings for a reactor pressure vessel (RPV). A nonlinear elastic-plastic model of an O-ring was constructed by the finite element method to analyze its intrinsic properties. It is also validated by experiments on scaled samples. The effects of the compression ratio, the geometrical parameters of the O-ring, and the structure parameters of the groove on the flange are discussed in detail. The results showed that the numerical analysis of the O-ring agrees well with the experimental data, the compression ratio has an important role in the distribution and magnitude of contact stress, and a suitable gap between the sidewall and groove can improve the sealing capability of the O-ring. After the optimization of the sealing structure, some key parameters of the O-ring (i.e., compression ratio, cross-section diameter, wall thickness, sidewall gap) have been recommended for application in megakilowatt class nuclear power plants. Furthermore, air tightness and thermal cycling tests were performed to verify the rationality of the finite element method and to reliably evaluate the sealing performance of a RPV.

• 한국진공학회지
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• 제7권2호
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• pp.161-168
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• 1998

Taguchi가 제안한 강건설계 및 연구자의 주관에 의존하는 통상적인 실험방법을 병 행하여 CH4/H2 유도결합 고밀도 플라즈마를 이용한 InP 소재의 반응성이온에칭에 있어 공 정변수들이 식각특성에 미치는 영향을 분석하고 적정조건을 도출하였다. 연구 결과 ICP전력 은 표면거칠기와 측벽수직도, bias 전력은 식각속도와 수직도에, CH4분율은 수직도와 식각 속도, 석영창과 시료 사이의 거리는 표면 거칠기에 영향을 주는 변수로 작용하였고, 식각속 도에 가장 크게 영향을 주는 변수는 공정압력임을 알 수 있었다. 결과적으로 ICP Power 700W, bias Power 150W, 시편/coil 거리 14cm, 압력 7.5mTorr, 15% $CH_4$의 적정조건에서 시간당 약 3.1$\mu\textrm{m}$의 식각속도와 미려한 표면을 얻어, 기존의 반응성 이온 식각(RIE)과 비교하 여 1.5배 이상의 식각속도를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• 한국지역지리학회지
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• 제19권2호
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• pp.234-245
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• 2013

지리산국립공원 종주등산로의 침식속도를 파악하기 위하여 노고단~삼도봉 구간에서 등산로의 형태별 유형을 고려하여 16개 측량지점을 선정하고 2010년 11월부터 2012년 4월까지 18개월간 등산로의 횡단면을 측량하였다. 모든 지점에서 실질적인 침식이 발생하여 등산로 횡단면이 확대되었으나 토양침식량은 지점에 따라 차이가 커 $54.9{\sim}908.8cm^2$, 일평균 침식속도로는 $0.1{\sim}1.72cm^2$의 범위를 보인다. 유형별로는 평탄면형 $172.4cm^2$, 얕은 우곡형 $109.3cm^2$, 깊은 우곡형 $493.9cm^2$, 외벽형은 $573.2cm^2$, 양벽형 $556.8cm^2$이다. 그러나 유형에 관계없이 등산로의 횡단면 변화는 노면보다는 측벽에서 크게 나타났다. 시기별로는 5월~10월의 침식량이 11월~4월보다 많았으며, 2011년 11월~2012년 4월에는 퇴적량이 침식량보다 많아 등산로 횡단면이 줄어들었다. 조사구간에서는 3월과 4월에 등산로 측벽에 서릿발작용으로 토양입자가 쌓이고 5월 이후 강수량이 많아지면서 우세로 제거되며 등산로 침식을 주도한다. 서릿발 발달에 유리하므로 북향 측벽의 침식량이 남향보다 크다. 4월에 관측되는 동결기의 작은 침식량과 등산로 횡단면의 축소는 동상과 서릿발작용에 작은 강우량과 일시적인 답압 중단이 가세하여 만들어낸 계절적인 현상이다. 산악국립공원의 등산로 관리 측면에서 등산로의 침식량과 요인에 대한 지속적인 관측이 이루어지는 등산로 침식 모니터링체제를 구축하는 것이 필요하다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 춘계학술대회 논문집
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• pp.302-305
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• 2007

The springback characteristics of AZ31B magnesium alloy sheet was investigated in OSU draw/bend test. Springback is the elastically-driven change of shape of a part after forming and it should be estimated and controlled to manufacture more precise products in sheet forming. The demands are increasing for magnesium alloy sheet press forming, but the study on its springback characteristics is insufficient. Strip draw/bend tests were conducted with various conditions - die radius, sheet thickness and controlled tensile force. The springback angles were measured from 'sidewall curl' of deformed shape. The tendency of springback angle was observed from the tests.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.36-36
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• 2009

In this work, we describe a method to fabricate the Pt-silicided SB-MOSFETs with a n-type Silicon-On-Insulator (SOI) substrate as an active layer and demonstrate their electrical and structural properties. The fabricated SB-MOSFETs have novel structure and metal gate without sidewall. The gate oxide with a thickness of 7 nm was deposited by sputtering. Also, this fabrication processes were carried out below $500^{\circ}C$. As a result, Subthreshold swing value and on/off ratio of Fabricated SB MOSFETs was 70 [mV/dec] and $10^8$.

• 전자공학회논문지D
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• 제34D권8호
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• pp.35-40
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• 1997

To suppress the short channel effects in nMOSFET with 0.1.mu.m channel length, we have fabricated and characterized the ISRC n MOSFET with several process condition. When the recess oxide thickness is 100nm and the channel dose for threshold voltge adjustment is 6*10$^{12}$ /c $m^{-2}$ , B $F_{2}$$^{+}$, the maximum transconductance at $V_{DS}$ =2.0V is 455mS/mm and the BIDL is kept within 67mV. By comparing the ISRC n MOSFET with the conventioanl SHDD (shallowly heavily dopped drain) nMOSFET, we verify the suppression of short channel effects ISRC structure.e.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.386-390
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• 2003

As a trial of application of hydrostatic pressure in micro fomring, burr-free punching has been conducted by means of hydro-mechanical procedure. Even though it is in beginning stage, result of the hydro-mechanical punching is promising. Hydrostatic pressure helps delay fracture initiation and makes it possible to get clean shearing surface. Without any burr on both side of sheet, smooth holes are archived as intended. To verify the significance of hydro-mechanical punching, conventional punching is performed under similar conditions and relatively larger portion of fracture surface is detected in the punching hole. Despite the quality of sidewall is not good enough, it might be possible to make the hole shaped upright, reduce the roll-over radius and minimize the fracture surface by optimizing process parameters.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집E
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• pp.450-455
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• 2001

An analytical study is made of transient adjustment process of an initially stationary, stably-stratified fluid in a square. The boundary walls are highly-conducting. The overall Rayleigh number $R_a$ is large. Considerations are given to both opposing (${\delta}w/{\delta}T>0$) and cooperating (${\delta}w/{\delta}T<0$) configurations. The flow character in opposing configuration can be classified into (a) a forced-convection dominaut mode (${\delta}w/{\delta}T>1/\sqrt{2}$), (b) a buoyancy-convection dominant mode ($0<{\delta}w/{\delta}T<1/\sqrt{2}$), and (c) a static mode (${\delta}w/{\delta}T{\cong}1/\sqrt{2}$). Global evolutionary processes are depicted. and physical rationalizations are provided.