• Solar Energy
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• v.11 no.1
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• pp.41-49
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• 1991

In this study, the (P)SiC/(N)Si solar cell is fabricated by the vacuum evaporation method with the substrate temperature at about $200{\pm}5[5^{\circ}C]$ and its characteristics are investigated. The optimal thickness of $1.2[{\mu}m]$ of SiC film is derived from the relation between film thickness and conversion efficiency. The characteristics of solar cells are improved by the annealing. The optimum annealing temperature and duration are $420[^{\circ}C]$ and 12[min], respectively it is shown that the peak values of spectral response are shifted to the long wavelength region with increasing the annealing temperature. The X-ray diffraction patterns and the scanning electron micrographs show the grain grow thin SiC film as the annealing temperature and time is increased. The best conversion efficiency is 11.7[%] for a $2.5{\times}1[cm^2]$ cell.

• Tissue Engineering and Regenerative Medicine
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• v.15 no.6
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• pp.711-719
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• 2018

BACKGROUND: Collagen organization within tissues has a critical role in wound regeneration. Collagen fibril diameter, arrangements and maturity between connective tissue growth factor (CTGF) small interfering RNA (siRNA) and mismatch scrambled siRNA-treated wound were compared to evaluate the efficacy of CTGF siRNA as a future implement for scar preventive medicine. METHODS: Nanocomplexes of CTGF small interfering RNA (CTGF siRNA) with cell penetrating peptides (KALA and $MPG^{{\Delta}NLS}$) were formulated and their effects on CTGF downregulation, collagen fibril diameter and arrangement were investigated. Various ratios of CTGF siRNA and peptide complexes were prepared and down-regulation were evaluated by immunoblot analysis. Control and CTGF siRNA modified cells-populated collagen lattices were prepared and rates of contraction measured. Collagen organization in rabbit ear 8 mm biopsy punch wound at 1 day to 8 wks post injury time were investigated by transmission electron microscopy and histology was investigated with Olympus System and TS-Auto software. CONCLUSION: CTGF expression was down-regulated to 40% of control by CTGF siRNA/KALA (1:24) complexes (p<0.01) and collagen lattice contraction was inhibited. However, down-regulated of CTGF by CTGF $siRNA/MPG^{{\Delta}NLS}$ complexes was not statistically significant. CTGF KALA-treated wound appeared with well formed-basket weave pattern of collagen fibrils with mean diameter of $128{\pm}22nm$ (n = 821). Mismatch siRNA/KALA-treated wound showed a high frequency of parallel small diameter fibrils (mean $90{\pm}20nm$, n = 563). CONCLUSION: Controlling over-expression of CTGF by peptide-mediated siRNA delivery could improve the collagen orientation and tissue remodeling in full thickness rabbit ear wound.

• The Journal of the Petrological Society of Korea
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• v.1 no.1
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• pp.42-48
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• 1992

The equilibrium pressure-temperature curve of the reaction: 6 Ca$_2$Al$_3$(OH)Si$_3$O$_{12}$=6 CaAl$_2$Si$_2$O$_{8}$+2 Ca$_3$Al$_2$Si$_3$O$_{12}$+Al$_2$O$_3$+3 H$_2$O zoisite anorthite grossularite corundum was experimentally determined using both externally and internally heated pressure vessels in the pressure range of 2-4 kbar. Synthetic zoisite, anorthite, grossularite and corundum were used as starting materials. Starting materials were synthesized at 13-16 kbar using the piston-cylinder apparatus. The dehydration temperature of zoisite at 2 kbar is 550${\pm}$12$^{\circ}C$ and at 4 kbar is 575${\pm}$20$^{\circ}C$. Low thermal stability of synthetic zoisite relative to natural zoisite at 4 kbar is attributed to the structural disorder of synthetic anorthite.

• Food Science and Preservation
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• v.15 no.2
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• pp.185-190
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• 2008

We investigated changes in fruit quality of Hallabong tangor (Citrus Kiyomi ${\times}$ ponkan) that was packaged with Si+CaO and LDPE film. The flesh ratio during storage was 74.33% (${\pm}3.66$) to 81.56% (${\pm}1.38$). Firmness of M16A, a variant of Hallabong tangor, was higher 100g-force than that of Hallabong tangor, changes of firmness was not shown among film packages. A fruit juice was $12-14^{\circ}$Brix, and this increased somewhat at the end of storage without film packaging. The titratable acidity of the M16A variety was 0.2% lower than that of the Hallabong tangor. Hallabong and M16A maintained freshness and taste for 120 and 60 days, respectively. The level of reducing sugars in the Hallabong tangor was 1% higher than that of the M16A variety. Reducing sugars increased at room temperature storage without film packaging. Total sugar content was 9.19% (${\pm}2.03$) to 12.78% (${\pm}0.75$). The content of vitamin C declined slowly after 105 days of storage. In conclusion, storage of Hallabong tangor with film packaging coated with Si+CaO was effective for maintaining freshness and quality.

• Journal of Acupuncture Research
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• v.20 no.2
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• pp.204-214
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• 2003

Objective : The purpose of this study is to evaluate clinical effect of oriental treatment for lumbago patients by comparing of Improvement index, Visual analog scale, DITI gap between common acupuncture with Dong-Si acupuncture treatment group and common acupuncture treatment group. Methods : The 38 patients who had a diagnosis of lumbago were observed from June 2002 to February 2003, were divided into two classes ; the A group was 19 cases practised Dong-Si acupuncture with common acupuncture, B group 19 cases only common acupuncture. Then the time of 2 weaks after, I compared Improvement index, Visual analog scale, DITI gap of two groups. Results : In Improvement Index, Group A is $0.4442{\pm}0.1165$ and Group B is $0.3061{\pm}0.1402$. So Group A is thought to be significant(P=0.002). In VAS(visual analogue scale), Group A is $7.4737{\pm}1.1239$ and Group B is $6.3684{\pm}1.0116$. So Group A is thought to be significant(P=0.003). In DITI, temperature differance of Group A is lower than Group B after treatment.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.131-145
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• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Journal of Radiation Protection and Research
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• v.23 no.1
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• pp.59-63
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• 1998

The light sensitivity and angular dependence of the $Mg_2SiO_4$:Tb(MSO-5) TLD which affect the accuracy of the radiation dose measurement are investigated. Light-induced thermoluminescence of MSO-S TLD under the 200 lux fluorescent and the incandescent lamp for 8 hours are corresponding to 11 and 3 mR exposure, respectively. TL intensity ratio of the incident angle of ${\pm}80^{\circ}$ to normal incidence for MSO-S and badge type MSO-L are about 0.8 and 0.15, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.