• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.665-667
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• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.59-72
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• 1999

In this thesis, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of composition $($Fe_{0.06}$$Co_{0.94}$)_${0.79}$$Si_{2.1}$$B_{18.9}$ with a thickness 12[pm1, width 2.5[rnml and length 5[cm], which was fabricated by a single roll method. In order to improve magnetic characteristics of the sample, we had carried on annealing in the magnetic field and in none magnetic field. And, experimented results to the magnetic characteristics show that the ribbon has large Barkhausen jump even in weak magnetic field below 0.5[0el. From the results, we confirmed that the sample can be used as an magnetic sensor material.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.370-371
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• 2006

The particulate strengthened $Cu-MoSi_2$ composites were prepared by a PM process to develop novel copper based composites with reasonable strength, high thermal conductivity and low thermal expansion coefficient. Microstructure of the composites was investigated by SEM; the tensile strength, elongation, thermal conductivity and thermal expansion coefficient (CTE) of the composites were examined. A comparative analysis of mechanical and thermal properties of various Cu-matrix composites currently in use was given and the strengthening mechanisms for the $Cu-MoSi_2$ composites were discussed.

• Journal of the Korean Society of Radiology
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• v.15 no.4
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• pp.409-414
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• 2021

In order to acquire an image from a gamma camera, linearity correction must be performed. To this end, digital coordinates are acquired by using a linearity map to accurately specify the location where the scintillator and gamma rays interact. In this study, a method for acquiring undistorted images and digital coordinates was developed using a lookup table and maximum likelihood position estimation without using a linearity map. The proposed method was verified by configuring a small gamma camera through DETECT2000 simulation. A gamma camera was constructed using a GAGG scintillator and a SiPM optical sensor, and a gamma-ray interaction was generated at the center of the scintillator, and a lookup table was prepared using the ratio of the signals obtained from the SiPM. Through the prepared lookup table and the maximum likelihood position estimation, the position of the signal obtained by the gamma-ray interaction was acquired as digital coordinates to compose an image. As a result, the linearity was maintained compared to the generally acquired image, the accuracy of the location where the gamma-ray interaction was generated was excellent, and the distance between the locations was uniform. Since the lookup table obtained through simulation is created using the ratio of the signal, it can be directly used in the experiment, and the position of the signal can be conveniently obtained with digital coordinates with corrected linearity without creating a linearity map.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.204-208
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• 1995

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.2
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• pp.80-86
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• 2008

Uncontrolled regeneration characteristics of two different type SiC DPFs(diesel particulate filters) were investigated by DPF test rig devised to facilitate DPF evaluation, especially for regeneration and MSL(maximum soot loading) test similar to engine dynamometer test. In order to estimate the limits of maximum filter temperature and temperature gradient causing filter fracture, such as crack or whitening, the temperature distributions inside the filter were measured by thermocouples. The maximum filter temperature was observed near the rear plane of central filter region due to heat accumulation by exothermic reaction of PM but the maximum temperature gradient occurred at the boundary of high filter temperature. These two parameters induced the different SiC DPFs to fracture with different modes, whitening and crack.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.