The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Electrical Properties of $Ba_{1-x}Sr_xTiO_3$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition

  • Yoon, Jong-Guk (Dept. of Mator. Eng., College of Eng., Chungnam Nat. Univ) ;
  • Yoon, Soon-Gil (Dept. of Mater. Eng., College of Eng., Chungnam Nat. Univ., Deaduk Sci. Town. Teajon 305-764) ;
  • Lee, Won-Jea (Dept. of Ceram. Sci. & Eng., Korea Advanced Institute of Sci. and Tech., Teajon 305-701)
  • Published : 1995.12.01
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Abstract

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

Keywords

References

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