• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.135.1-135.1
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• 2014

Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2306-2312
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• 2020

Here we report on the first results of sensitivity evaluation of the gadolinium-aluminum-gallium- garnet (GAGG) scintillation detector with SiPM readout to fast and slow neutrons and, to the natural background and Co-60 γ-radiation as well. Data on sensitivity were obtained using certified dosimetry benches, so it can be utilized in the calculation of detection limits of neutron flux with such type of detectors. It was concluded that use of GAGG scintillator has a good prospect for neutron monitoring in different parts of nuclear research reactors and power plants.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.96-100
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• 2015

In the present study, we developed a real-time radiation-monitoring sensor for an underwater radiation-monitoring system and evaluated its effectiveness using reference radiation sources. The monitoring sensor was designed and miniaturized using a silicon photomultiplier (SiPM) and a cerium-doped-gadolinium-aluminum-gallium-garnet (Ce:GAGG) scintillator, and an underwater wireless monitoring system was implemented by employing a remote Bluetooth communication module. An acrylic water tank and reference radiation sources ($^{137}Cs$, $^{90}Sr$) were used to evaluate the effectiveness of the monitoring sensor. The underwater monitoring sensor's detection response and efficiency for gamma rays and beta particles as well as the linearity of the response according to the gammaray intensity were verified through an evaluation. This evaluation is expected to contribute to the development of base technology for an underwater radiation-monitoring system.

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.648-654
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• 2023

A dual-particle imager (DPI) is configured in a hand-held form factor, then one can efficiently and conveniently deploy the DPI to detect the presence of special nuclear materials (SNM) and identify any isotopic variations that differ from their natural abundances. Here we show that by maximizing the areal coupling between a pixelated scintillator array and the partitioned photosensor readout such as a silicon photomultiplier (SiPM), the information utilization of the gamma-ray and neutron information in the radiation field can be enhanced, thus enabling one to rapidly acquire spatial maps of the distributions on gamma-ray and neutron emitters.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.324-329
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• 2015

A decreased number of readout method is investigated to provide precise pixel information for small-animal positron emission tomography (PET). Small-animal PET consists of eight modules, and each module is composed of a $6{\times}6$ array of $2{\times}2{\times}20mm^3$ lutetium yttrium orthosilicate (LYSO) crystals optically coupled to a $4{\times}4$ array of $3{\times}3mm^2$ silicon photomultipliers (SiPMs). The number of readout channels is reduced by one-quarter that of the conventional method by applying a simplified row and column matrix algorithm. The performance of the PET system and detector module was evaluated with Geant4 Application for Emission Tomography (GATE) 6.1 and DETECT2000 simulations. In the results, all pixels of the $6{\times}6$ LYSO array were decoded well, and the spatial resolution and sensitivity, respectively, of the PET system were 1.75 mm and 4.6% (@ center of field of view, energy window: 350-650 keV).

• International Journal of Industrial Entomology and Biomaterials
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• v.18 no.2
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• pp.83-89
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• 2009

Multiplication and spore production of three microsporidia(Nosema bombycis, Nosema sp. 1 and Nosema sp. 2) in selected tissues of pupa and adult of silkworm, Bombyx mori L. were studied in two seasons (SI, SII) with distinct temperature (SI: $20.1{\pm}0.8^{\circ}C$ and SII: $25.1{\pm}0.7^{\circ}C$) regimes. Multiplication of the microsporidia followed a logistic pattern with a lag phase, an exponential phase and a stationary phase. In SII, spore production was significantly (P<0.01) higher in various tissues. Highest spore production was observed 30 days post inoculation (p.i.) in SI and in SII, it was $21{\sim}23$ days p.i. Spore production was significantly (P<0.01) higher in the gut tissues than other tissues. Nosema sp. 2 registered significantly (P<0.01) higher spore production in both the seasons compared to Nosema bombycis and Nosema sp. 1. Results indicate that the multiplication and spore production of microsporidia are tissue specific and extremely sensitive to the temperature at which the host is reared. Through this study, the precise day that the spore numbers of the microsporidia are maximized can be predicted in both pupa and adult in case the infection is initiated in the first instar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• KSTLE International Journal
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• v.5 no.1
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• pp.1-6
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• 2004

Nano-scale studies on adhesion and friction were conducted in Si-wafer (100) using Atomic Force Microscopy (AFM). Glass (Borosilicate) balls of radii 0.32$\mu\textrm{m}$, 1.25$\mu\textrm{m}$, and 2.5$\mu\textrm{m}$, mounted on cantilever (Contact Mode type NPS) were used as tips. Adhesion and friction between Si-wafer and glass tips were measured at ambient temperature (24${\pm}$1$^{\circ}C$) and humidity (45${\pm}$5%). Friction was measured as a function of applied normal load in the range of 0-160 nN. Results showed that, both adhesion and friction increased with the tip radii. Also, friction increased linearly as a function of applied normal load. The effect of tip size on adhesion and friction was explained as the influence of the capillary force exerted by meniscus and that of the contact area on these parameters respectively. The coefficient of friction was estimated in two different ways, as the slope from the plot of friction force against the applied normal load and as the ratio between the friction force and the applied normal load. Both these estimates showed that the coefficient of friction increased with the tip size. Further, the influence of the adhesion force on the coefficient of friction was also discussed.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.26-31
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• 2001

This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20 ${\mu}{\textrm}{m}$ thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03 ${\mu}{\textrm}{m}$ and the standard deviation was $\pm$0.26 ${\mu}{\textrm}{m}$. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.

• Transactions of Materials Processing
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• v.14 no.6 s.78
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• pp.502-508
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• 2005

Hypereutectic Al-Si alloys have been regarded attractive for automotive and aerospace application, due to high specific strength, good wear resistance, high thermal stability, low thermal expansion coefficient and good creep resistance. Spray casting of hypereutectic Al-Si alloy has been reported to provide distinct advantages over ingot metallurgy (IM) or rapid solidification/powder metallurgy (RS/PM) process in terms of microstructure refinement. In this study, hypereutectic Al-25Si-2.0Cu-1.0Mg alloy was prepared by OSPREY spray casting process. The change of strain rate sensitivity and Creep transition were analyzed by using the load relaxation test and constant creep test. High temperature deformation behavior of the hypereutectic Al-Si alloy has been investigated by applying the internal variable theory proposed by Chang et al. Especially, the creep resistance of spray casted hypereutectic Al-Si alloy can be enhanced considerably by the accumulation of prestrain.