• Korean Journal of Optics and Photonics
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• v.30 no.2
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• pp.59-66
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• 2019

We report highly sensitive detection of myocardial infarction biomarkers, such as myoglobin and cTnI, within several hundred seconds using a rotating-analyzer ellipsometer and a biosensor with biochips fabricated on a $SiO_2$-coated tilted silicon substrate. We choose the running buffer to be pure phosphate-buffered saline (PBS) or 10% mixed human serum. When we choose the running buffer to be pure PBS, we obtain diagnostic densities of pure myocardial infarction biomarkers of up to 1 ng/ml and 5 pg/ml respectively. Meanwhile, when we use PBS with 10% human serum, the measured densities of myoglobin and cTnI were up to 1 ng/mL and 1 pg/mL respectively. The measured diagnostic densities are less than 1/15 and 1/80 (in cases of myoglobin and cTnI respectively) of those referenced by the World Health Organization.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Proceedings of the Korea Information Processing Society Conference
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• 2006.05a
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• pp.669-672
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• 2006

고온가스냉각 원자로에서는 고온 안정성 및 핵분열생성물 차단 성능이 우수한 TRISO(tri-tsotropic) 핵연료를 사용하고 있다. TRISO 핵연료 입자는 직경이 약 1 mm인 구 형태로 입자의 중심에는 직경 $0.5{\mu}m$의 핵연료 커널(kernel)이 포함되며 커널 외곽을 코팅 층이 에워싸고 있다. 이 코팅 층은 완충(buffer) PyC(pyrolytic carbon) 층, 내부 PyC 층, SiC 층, 그리고 외부 PyC 층으로 구성되어 있다. 각 코팅 층의 두께는 수십${\sim}$백 ${\mu}m$ 범위이며, 본 연구에서는 각 코팅 층의 두께를 비파괴적으로 측정하기 위하여 마이크로포커스 X-선 발생장치와 고해상도 X-선 평판(flat panel) 검출기로 구성된 정밀한 X-선 래디오그래피 장치를 구성하고, $UO_2$ 핵물질 대신에 $ZrO_2$를 커널로 사용한 모의 TRISO 핵연료 입자에 대한 래디오그래피 영상을 획득한 후 디지털 영상처리기술을 이용하여 코팅 층 사이의 경계선이 구분 가능하도록 영상을 개선하고 디지털 영상처리 알고리즘을 개발하여 코팅 층의 두께를 측정하였다.

• Journal of Korean Society of Forest Science
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• v.84 no.1
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• pp.103-113
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• 1995

To estimate buffer capacity and sensitivity of forest ecosystem to acid rain in Taejon, ionic components of throughfall, stemflow, soil leachate, and open rain in Pinus rigida and Quercus variabilis forest were analysed. The spatial sensitivity based on parent rock and forest type was given by IDRISI of GIS which created imagery conversion from soil and vegetation map. Parent rocks and soils were classified into acidic, sedimentary, metamorphic rock and then subdivided based on $SiO_2$ content. Average pH of vegetation leachate was higher in throughfall but lower in stemflow than open rain and higher in Quercus variabilis forest than in Pinus rigida forest. The flow of $SO{_4}^{2-}$, $NO_3{^-}$ and $Cl^-$ through vegetation leaching(throughfall plus stemflow) into soil were 7.2, 4.3, and 2.5 times, respectively, higher in Pinus rigida forest and 4.4, 2, and 2.5 times, respectively, higher in Quercus variabilis forest than in open field. But the concentration of exchangeable cations was 4.1 times higher in Pinus rigida forest and 4.6 times higher in Quercus variabilis forest than in open field. Average pH of soil leachate was lower than that of throughfall, but higher than that of stemflow. The concentration of exchangeable canons and $Al^{3+}$ in soil leachate were more in Pinus rigida forest than in Quercus variabilis forest and increase signficantly with the increase of acidic deposits. Pinus forest had more deposition and canopy interception of acidic pollutants and more nutrient loss than Quercus forest, and Quercus forest had more cation exchange and proton consumption and than consequently had less nutrient loss and better buffer capacity than Pinus forest. The 69% of forest soils was distributed on acidic rock, 25% of it on metamorphic rock, and 6% of it on intermediate and basic rock. Acidic rock residuals which had low very canon exchange capacity and high sensitivity to acid rain occupied a half of total forest land in Taejon area. Therefore forests in Taejon showed high vulnerability to acid rain and will receive much more stress with the increase of acid rain precursors.

• Ultrasonography
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• v.32 no.1
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• pp.59-65
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• 2013

Purpose: The purpose of this study is to establish the methodology regarding synthesis of ultrasound contrast agent imaging, and to evaluate the characteristics of the synthesized ultrasound contrast agents, including size or degradation interval and image quality. Materials and Methods: The ultrasound contrast agent, composed of liposome and SF6, was synthesized from the mixture solution of $21{\mu}mol$ DPPC (1, 2-Dihexadecanoyl-sn-glycero-3-phosphocholine, $C_{40}H_{80}NO_8P$), $9{\mu}mol$ cholesterol, $1.9{\mu}mol$ of DCP (Dihexadecylphosphate, $[CH_3(CH_2)_{15}O]_2P(O)OH$), and chloroform. After evaporation in a warm water bath and drying during a period of 12-24 hours, the contrast agent was synthesized by the sonication process by addition of buffer and SF6 gas. The size of the contrast agent was controlled by use of either extruder or sonication methods. After synthesis of contrast agents, analysis of the size distribution of the bubbles was performed using dynamic light scattering measurement methods. The degradation curve was also evaluated by changes in the number of contrast agents via light microscopy immediate, 12 hours, 24 hours, 36 hours, 48 hours, 60 hours, 72 hours, and 84 hours after synthesis. For evaluation of the role as an US contrast agent, the echogenicity of the synthesized microbubble was compared with commercially available microbubbles (SonoVue, Bracco, Milan, Italy) using a clinical ultrasound machine and phantom. Results: The contrast agents were synthesized successfully using an evaporation-drying-sonication method. The majority of bubbles showed a mean size of 154.2 nanometers, and they showed marked degradation 24 hours after synthesis. ANOVA test revealed a significant difference among SonoVue, synthesized contrast agent, and saline (p < 0.001). Although no significant difference was observed between SonoVue and the synthesized contrast agent, difference in echogenicity was observed between synthesized contrast agent and saline (p < 0.01). Conclusion: We could synthesize ultrasound contrast agents using an evaporation-drying-sonication method. On the basis of these results, many prospective types of research, such as anticancer drug delivery, gene delivery, including siRNA or microRNA, targeted molecular imaging, and targeted therapy can be performed.