• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.239-244
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• 1996

We firstly report that formation of $SiO_2$ layer on Si surface can be effectively prevented by flowing the $Si_2H_6$ gas during the heating-up procedure for amorphous Si depositions. In this way, amorphously deposited Si layer onto crystalline Si substrates can be grown epitaxially during the post-deposition heat treatments. The suppression of surface $SiO_2$ can be explained in terms of adsorption of SiHx adspecies, instead of oxygen from residual gases in the reactors, to Si surfaces after desorption of hydrogen from H-passivated Si surfaces. Employing $Si_2H_6$ flowing and soild phase epitaxial growth, high-quality epitaxial Si layer can be obtained at low temperatures below $600^{\circ}C$ without conventional high temperature cleaning procedures.

• Fibers and Polymers
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• v.2 no.3
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• pp.135-140
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• 2001

Organic-inorganic hybrid composites consisting of poly(vinylidene fluoride) (PVDF) and SiO$_2$ were prepared through a sol-gel process and the crystallization behavior of PVDF in the presence of $SiO_2$ networks was investigated by spectroscopic, thermal and x-ray diffraction measurements. The hybrid composites obtained were relatively transparent, and brittleness increased with increasing content of tetraethoxysilane (TEOS). It was regarded from FT-lR and DSC thermal analyses that at least a certain interaction existed between PVDF molecules and the $SiO_2$ networks. X-ray diffraction measurements showed that all of the hybrid samples had a crystal structure of PVDF ${\gamma}$-phase. Fresh gel prepared from the sol-gel reaction showed a very weak x-ray diffraction peak near 2$\theta$=$21^{\circ}$ due to PVDF crystallization, and Intensity increased grade-ally with time after gelation. The crystallization behavior of PVDF was strongly affected by the amount of $SiO_2$ networks. That is, $SiO_2$ content directly influenced preference and disturbance fur crystallization. In polymer-rich hybrids, $SiO_2$ networks had a favorable effect on the extent of PVDF crystallization. In particular, the maximum portent crystallinity of PVDF occurred at the content of 3.7 wt% $SiO_2$ and was higher than that of pure PVDF. However. beyond about 10 wt% $SiO_2$, the crystallization of PVDF was strongly confined.

• Journal of radiological science and technology
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• v.19 no.2
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• pp.79-83
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• 1996

The thermoluminescence(TL) response in changing annealing condition, triboluminescence, and darkroom temperature for $Mg_2SiO_4$:Tb phosphor are examined. The experimental results are summerized as follows : 1. The uniformity of TL intensity is better In the disinfected $Mg_2SiO_4$ : Tb than in contaminated one. 2. The triboluminescence of $Mg_2SiO_4$ : Tb is almost not detected even if numbers of $Mg_2SiO_4$ : Tb falling are increased. 3. The fading effect of $Mg_2SiO_4$ : Tb is scarcely affected by freezing room. The followings are resulted from the study. The disinfected $Mg_2SiO_4$ : Tb phosphor should be used in the dose measurement and the immediate reading for $Mg_2SiO_4$ : Tb after exposure is better. And if the reading is not immediately taken, a law darkroom temperature for $Mg_2SiO_4$ : Tb storage is recommended.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.170-171
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• 2006

The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film has the broad main band of $880{\sim}1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the infrared spectra in the Si-O-C bond moved to low frequency according to the increasing of an oxygen flow rate. The chemical shift affected the carbon content in the SiOC film, and the decreasing of carbon atoms elongated the C-H bonding length, relatively. The main bond without the sharp Si-$CH_3$ bond at $1252cm^{-1}$ consisted of Si-C, C-O and Si-O bonds, and became the bonding structure of the Si-O-C bond.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.189-190
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• 2008

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated. The band structure of stacked tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with that of the conventional tunneling barrier. The band-gap engineered tunneling barriers show the lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Korean Journal of Mineralogy and Petrology
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• v.36 no.2
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• pp.95-106
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• 2023

Quartz (SiO₂) is among the major rock-forming minerals in the earth's crust. The atomistic structures of SiO₂ may evolve during diverse frictional processes. The reduction of friction of quartz-rock accompanied by its amorphization, hydration, and formation of silica gel provides mineralogical insights into earthquakes and related phenomena. Ball milling, together with rotary shear experiments have been useful to infer the atomic origins of such processes. In this study, optimal experimental conditions for ball milling for amorphization of SiO₂ were determined by taking into account various process variables. The crystallinity of SiO₂ gradually decreased and became amorphous as the ball milling time increased at a high milling speed. The degree of wear of the milling media and its effect on the amorphization of SiO₂ were analyzed using distinct milling materials (zirconia, stainless steel). The amount of ball wear increased with increasing milling time. Furthermore, the worn stainless steel particles from balls tend to interact with amorphized SiO₂ to form Si-O-Cr. These results aid in understanding the process of atomistic structural changes caused by ball milling of divserse materials with relatively high hardness, such as SiO₂, and understanding various geological friction processes.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.237.2-237.2
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• 2012

We performed simultaneous observations of SiO v=1, 2, $^{29}SiO$ v=0, J=1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward 132 AGB and 183 post-AGB stars in order to investigate how evolutionary characteristics from AGB to post-AGB stars appear in these two maser emissions. The observations were carried out from 2011 February to 2012 March using the Korean VLBI Network 21-m radio telescopes. We have detected SiO and/or $H_2O$ maser emission from 29 sources out of 183 post-AGB stars including 19 new detections. Of 132 AGB stars which are mainly selected based on the IRAS Point Source Catalog, we detected SiO and/or $H_2O$ maser emission from 38 stars including 18 newly detected sources. An evolutionary characteristic from AGB to post-AGB stars is discussed in IRAS two-color diagram. It is found that SiO v=2, J=1-0 maser emission without SiO v=1 maser detections was detected from 8 sources among 21 SiO detected post-AGB stars and the intensity of SiO v=2, J=1-0 maser tends to be much stronger than that of SiO v=1. We also found that for the post-AGB stars the maser detection rate of blue group sources (which have higher outflow velocities than red group) are higher than that of red group. Especially, only $H_2O$ maser emission was detected from 7 sources among 94 red group sources without SiO maser detections.