• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.11a
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• pp.28-29
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• 2003

• Korean Journal of Soil Science and Fertilizer
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• v.49 no.6
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• pp.819-825
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• 2016

Monitoring of soil fertility and crop productivity in long-term application of silicate fertilizers is necessary to use fertilizers efficiently. This study was conducted to investigate effects of continuous application of silicate fertilizer for rice cultivation from 1969 to 2014. The treatments were no silicate fertilizer treatments (N, NC, NPK, and NPKC) and silicate fertilizer treatments (N+S, NC+S, NPK+S, and NPKC+S). The 46-yr input of $2\;ton\;ha^{-1}yr^{-1}$ of silicate fertilizer increased pH 0.6 ~ 1.1 and exchangeable Ca $2.0{\sim}2.4cmol_c\;kg^{-1}$ in silicate fertilizer treatments (N+S, NC+S, NPK+S, and NPKC+S) compared with no silicate fertilizer treatments (N, NC, NPK, and NPKC) because silicate fertilizer included Ca component. Also, available silicate concentrations of silicate fertilizer treatments (N+S, NC+S, NPK+S, and NPKC+S) increased $169mg\;kg^{-1}$ compared to no silicate fertilizer treatments. In Period II ('90~'14), the mean annual Si field balance varied from 62 to $175kg\;ha^{-1}yr^{-1}$ in silicate fertilizer treatments, indicating continuous accumulation of soil Si. Silicon uptake and grain yield of rice had greater differences between N treatment and N+S treatment than other treatments. This showed that the application of silicate fertilizer had greater effect in nutrient-poor soils than in proper nutrient soils. Thus the application of silicate fertilizer led to improvement the fertility of soil and increasement of rice production for the lack of soil nutrients.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.114.1-114
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• 2002

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.156-160
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• 2006

Capacitance versus voltage (C-V) curves of Ge-nanocrystal (NC)-embedded MOS capacitors with and without a single capping Al2O3 layer are characterized in this work. C-V curves of the Ge-NC-embedded MOS capacitor with the A12O3 layer are counterclockwise in the voltage sweeps, which indicates tile presence of charge storages in the Ge NCs by the tunnelling of charge carriers between the Si substrate and the Ge NCs. In the Ge-NC-embedded MOS capacitor without Al2O3 layer, clockwise hysteresis of the C-V curves and leftward shifts of the flat band voltages are observed for the embedded MOS capacitor without the Al2O3 layer. It is suggested that the characteristics of the C-V curves are due to the charge trapping at oxygen vacancies within a SiO2 layer. In addition, the illumination of the white light enhances the lower capacitance part of the C-V hysteresis. The origin for the enhancement is discussed in this paper.

• Journal of the Korean Wood Science and Technology
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• v.42 no.5
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• pp.579-589
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• 2014

Atopic dermatitis (AD) syndrome is one of the most common and severe skin diseases in Korea; a large population has this disease. We examined the effects of the extract from the leaf and sprig of Camellia sinensis on the development of AD by using NC mice as a model of atopic dermatitis. Oral administration of the extract to NC/Nga mice treated with 2,4?dinitrochlorobenzene (DNCB) inhibited the development of AD-like skin lesions as shown by a significant decrease in the skin symptoms of the disease and a decrease in ear thickness and levels of immunoglobulin E (IgE) and thymus-and activation-regulated chemokine (TARC) level in the skin. Administration of the extract markedly suppressed the DNCB-induced mRNA expression of interleukin 4 (IL-4) and tumor necrosis factor ${\alpha}$ (TNF-${\alpha}$). The findings suggest that transdermal application of the extract may modulate in the skin of NC/Nga mice. The extract was effective for the prevention and treatment of AD.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.12
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• pp.6517-6521
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• 2012

To analyze the growth, proliferation, apoptosis, invasiveness and chemotherapy sensitivity of EC9706 cells after K-Ras gene silencing, an expression carrier pSilencer-siK-Ras was constructed, and the EC9706 cell line was transfected using a liposome technique. Six groups were established: Control, siRNA NC (transfected with empty vector pSilencer2.1); Ras siRNA (transfected with pSilencer-siK-Ras2); Paclitaxel; Paclitaxel + siRNA NC; and Ras siRNA + Paclitaxel. After the treatment, RT-PCR, Western blotting, MTT assay, flow cytometry and the Transwell technique were used to assess expression of K-Ras mRNA and protein in EC9706 cells, as well as cell growth, proliferation, apoptosis and invasiveness. The effect of Paclitaxel chemotherapy was also tested. pSilencer-siK-Ras2 effectively down-regulated expression of K-Ras mRNA and protein in EC9706 cells, growth being significantly inhibited. Flow cytometry indicated obvious apoptosis of cells in the experimental group, with arrest in the G1 phase; cell migration ability was also reduced. After pSilencer-siK-Ras2 transfection or the addition of Paclitaxel, EC9706 cells were suppressed to different extents; the suppressive effect was strengthened by combined treatment. The results suggested that RNAi-induced K-Ras gene silencing could enhance chemotherapy sensitivity of esophageal cancer.

• Bulletin of the Korean Chemical Society
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• v.20 no.1
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• pp.65-68
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• 1999

Novel mononuclear group 13 metal complexes with the formula (R2M){NC5H4C(CH3)NNC(S)NH(C6H5)} (M=Al, R=iC4H9 (1); M=Ga, R=iC4H9 (2); M=Al, R=CH2SiMe3 (3); M=Ga, R=CH2SiMe3 (4)) result when 2-acetyl pyridine 4-phenyl-thiosemicarbazone ligand is mixed with trialkyl aluminum or trialkylgallium. These compounds 1-4 are characterized by microanalysis, NMR (1H, 13C) spectroscopy, mass spectra, and singlecrystal X-ray diffraction. X-ray single-crystal diffraction analysis reveals that 1 is mononuclear metal compound with coordination number of 5 and N, N, S-coordination mode.