• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.321-327
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• 2001

Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

• Journal of Powder Materials
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• v.6 no.1
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.128-129
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• 2007

Cr-Al-N, Cr-Si-N 그리고 Cr-Al-Si-N 코팅막을 WC-Co 모재위에 AIP법과 DC 마그네트론 스퍼터링 법을 결합한 하이브리드 시스템을 이용하여 합성하였으며, Si함량에 따른 Cr-Al-Si-N 코팅막의 미세구조, 기계적 특성과 마찰 거동에 관해 비교 연구하였다. Cr-Si-N(${\sim}35GPa$)과 Cr-Al-Si-N(${\sim}55GPa$) 코팅막의 경도값은 CrN(${\sim}23GPa$)과 Cr-Al-N(${\sim}25GPa$) 코팅막과 비교하여 각각 증가하였고, CrN(${\sim}0.50$)과 Cr-Al-N(${\sim}0.84$)의 평균 마찰계수는 Si 함량이 9 at.% 일때, Cr-Si-N(${\sim}0.30$)과 Cr-Al-Si-N(${\sim}0.57$)으로 각각 감소하였다.

• Journal of Pharmacopuncture
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• v.7 no.2
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• pp.57-64
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• 2004

This study was carried to identify the component of Small Intestine Meridian Muscle in human, dividing the regional muscle group into outer, middle, and inner layer. the inner part of body surface were opened widely to demonstrate muscles, nerve, blood vessels and the others, displaying the inner structure of Small Intestine Meridian Muscle. We obtained the results as follows; 1. Small Intestine Meridian Muscle is composed of the muscle, nerve and blood vessels. 2. In human anatomy, it is present the difference between a term of nerve or blood vessels which control the muscle of Meridian Muscle and those which pass near by Meridian Muscle. 3. The inner composition of meridian muscle in human arm is as follows ; 1) Muscle ; Abd. digiti minimi muscle(SI-2, 3, 4), pisometacarpal lig.(SI-4), ext. retinaculum. ext. carpi ulnaris m. tendon.(SI-5, 6), ulnar collateral lig.(SI-5), ext. digiti minimi m. tendon(SI-6), ext. carpi ulnaris(SI-7), triceps brachii(SI-9), teres major(SI-9), deltoid(SI-10), infraspinatus(SI-10, 11), trapezius(Sl-12, 13, 14, 15), supraspinatus(SI-12, 13), lesser rhomboid(SI-14), erector spinae(SI-14, 15), levator scapular(SI-15), sternocleidomastoid(SI-16, 17), splenius capitis(SI-16), semispinalis capitis(SI-16), digasuicus(SI-17), zygomaticus major(Il-18), masseter(SI-18), auriculoris anterior(SI-19) 2) Nerve ; Dorsal branch of ulnar nerve(SI-1, 2, 3, 4, 5, 6), br. of mod. antebrachial cutaneous n.(SI-6, 7), br. of post. antebrachial cutaneous n.(SI-6,7), br. of radial n.(SI-7), ulnar n.(SI-8), br. of axillary n.(SI-9), radial n.(SI-9), subscapular n. br.(SI-9), cutaneous n. br. from C7, 8(SI-10, 14), suprascapular n.(SI-10, 11, 12, 13), intercostal n. br. from T2(SI-11), lat. supraclavicular n. br.(SI-12), intercostal n. br. from C8, T1(SI-12), accessory n. br.(SI-12, 13, 14, 15, 16, 17), intercostal n. br. from T1,2(SI-13), dorsal scapular n.(SI-14, 15), cutaneous n. br. from C6, C7(SI-15), transverse cervical n.(SI-16), lesser occipital n. & great auricular n. from cervical plexus(SI-16), cervical n. from C2,3(SI-16), fascial n. br.(SI-17), great auricular n. br.(SI-17), cervical n. br. from C2(SI-17), vagus n.(SI-17),hypoglossal n.(SI-17), glossopharyngeal n.(SI-17), sympathetic trunk(SI-17), zygomatic br. of fascial n.(SI-18), maxillary n. br.(SI-18), auriculotemporal n.(SI-19), temporal br. of fascial n.(SI-19) 3) Blood vessels ; Dorsal digital vein.(SI-1), dorsal br. of proper palmar digital artery(SI-1), br. of dorsal metacarpal a. & v.(SI-2, 3, 4), dorsal carpal br. of ulnar a.(SI-4, 5), post. interosseous a. br.(SI-6,7), post. ulnar recurrent a.(SI-8), circuirflex scapular a.(SI-9, 11) , post. circumflex humeral a. br.(SI-10), suprascapular a.(SI-10, 11, 12, 13), first intercostal a. br.(SI-12, 14), transverse cervical a. br.(SI-12,13,14,15), second intercostal a. br.(SI-13), dorsal scapular a. br.(SI-13, 14, 15), ext. jugular v.(SI-16, 17), occipital a. br.(SI-16), Ext. jugular v. br.(SI-17), post. auricular a.(SI-17), int. jugular v.(SI-17), int. carotid a.(SI-17), transverse fascial a. & v.(SI-18),maxillary a. br.(SI-18), superficial temporal a. & v.(SI-19).

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.428-435
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• 1996

초미립 SiC분말과 SiC platelet을 2차성으로 Si3N4에 첨가하여 SiC/Si3N4 하이브리드 복합체를 가압소결로 제조한 후 2차상의 영향을 조사한 결과핫프레스법을 이용한 경우 SiC platelet은 Si3N4 기지 복합채의 치밀화를 저해하지 않고 초미립의 SiC 첨가는 Si3N4의 입성장을 효과적으로 억제하여 미세한 $\beta$-Si3N4의 grain을 형성함을 관찰하였다. 초미립 SiC첨가를 통한 복합체의 강도 증진은 상대적으로 $\beta$-Si3N4입자의 미세화에 의한 인성의 저하를 유도하나 SiC platelet을 첨가하여 급격한 강도 저하 없이 높은 인성을 갖는 하이브리드 복합체를 제조할 수 있었으며 SiC/Si3N4 하이브리드 복합체의 인성증진은 elongated $\beta$-Si3N4와 platelet SiC의 debonding에 의한 grain pull-out 영향임을 알 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.95-99
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• 2011

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various $N_2/(Ar+N_2)$ flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.49-49
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• 2002

독립된 티타늄(Ti)과 실리콘(Si) 타켓을 사용하여 DC reactive magnetron co-sputtering 공 정으로 Ti-Si-N 코탱막을 SKD 11 합금강위에 합성하였다. 고분해능 TEM 및 XPS 분석들로부터 Ti-Si-N 코탱막은 나노미터 크기의 TiN결정체들이 비정질 Si3N4 기지에 분산된 나노복합체의 마세구조를 냐타내었다. 코탱막의 경도는 11 at.%의 Si 함량에서 39 GPa의 최 고 경도값을 나타내었고 이 경우 미셰조직은 5nm 크기의 미세한 TiN 결정이 비정절상의 기지에 균일하게 분포된 특성을 보였다 .. Ti-Si-N 박막내에 Si 함량이 증가할수록 TiN 결정 상들은 다배향성을 나타내었고 크기가 감소하였으며 비정질상에 의해 완전히 둘려싸언 형상 으로 변화하였다. 높은 Si 함량에서는 질소 소스의 부족현상에 의하여 코팅막내에서 free Si 가 나타났다. 상대습도가 증가함에 따라 Ti-Si-N 코탱막의 마찰계수와 마모량이 현저하게 감소하였다. 강재에 대한 Ti-Si-N 코팅막의 마모거동에 있어서 Si02 냐 Si(OH)2 같은 얇은 윤활막의 형성이 중요한 역할을 하는 것으로 판단되어졌다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.