• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.189-193
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• 2007

Effect of additive composition on fracture toughness of in situ-toughened $SiC-Si_3N_4$ composites was investigated for five different additive compositions. The highest toughness $(6.4MPa{\cdot}m^{1/2})\;in\;SiC-Si_3N_4$ composites investigated herein was obtained when an Y-Mg-Si-Al-O-N oxynitride glass was used as a sintering additive. The improvement in fracture toughness was produced by enhanced bridging and deflection by $Si_3N_4$ grains.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.785-790
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• 1993

Sialon ceramics are presently seen as promising materials with high hardness, strength, fracture toughness and corrosion resistance for friction and wear applications. The objective of present work is to improve of mechanical properties and wear resistance of $\alpha$-Sialon(x=0.4) by addition of SiC whisker. $\alpha$-sialon(x=0.4)/SiC whisker composites were obtained by hot-isostatic pressing at 173$0^{\circ}C$ for 1 hour under 1757Kg/$\textrm{cm}^2$ N2 pressure after pressureless sintering the mixture of Si3N4, Y2O3, AlN at 1780~180$0^{\circ}C$ for 3~5 hours in N2 atmosphere. As the amount of SiC whisker content increased, relative density and hardness were decreased, however fracture toughness, bending strength and tribological properties were improved. Tribological properties of $\alpha$-Sialon/15 vol% SiC whisker composite were improved in spite of its low mechanical properties.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.188-192
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• 2006

The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.317-323
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• 1999

Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.260-265
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• 1999

$SiC/Si_3N_4$ composites were prepared by mixing ${\alpha}-Si_3N_4$ powder to $\alpha$-SiC powder in the range of 10 to 30 vol% with 10 vol% interval. 6 wt% of $Al_2O_3$ and $Y_2O_3$ were also added respectively as sintering aids. Then, pressureless sintering was performed at 1,78$0^{\circ}C$ for 2 hours in $N_2$ gas. In the case of adding 20 vol% of ${\alpha}-Si_3N_4$ powder, the relative desity to theoretical value and the flexutal strength were 92 % and 3,560 MPa, respectively. The smallest relative worn amount thereof was $2.68{\times}10^{-3}\;mm^2$ for 20 vol% ${\alpha}-Si_3N_4$. The composite containing 30 vol % of ${\alpha}-Si_3N_4$ powder showed the highest fracture toughness $(K_{1c})$ of $4.9\;MN/m^{3/2}$, although the reduction of the wear resistance due to the effect of the pores was observed.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.231-236
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• 1988

In order to investigate the effect of second phase on $Al_2O_3$ matrix, SiC particles were dispersed in $Al_2O_3$ matrix as a second phase over the content range of 5 vol.% to 20 vol.%. To this mixture, $Y_2O_3$ or $TiO_2$ powders were added as a sintering additive before isostatically pressing and pressurelessly sintering at 180$0^{\circ}C$ for 90 min in $N_2$ atmosphere. With increasing SiC content, relative densities of composites were decreased but mechanical properties of composites were improvjed. In the case of adding $Y_2O_3$ as a sintering additive, maximum values of flexural strength, hardness and fracture toughness were 525 MPa, 17.1 GPa, 4.1 MPa.m1/2 respectively. In the case of adding X$TiO_2$ as a sintering additive, maximum values of flexural strength, hardness were 285 MPa, 12.1 GPa respectively. Improved mechanical properties were found to be the results of grain growth control of $Al_2O_3$ matrix and crack deflection by the second phase SiC particles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.242-242
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• 2004

The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃＋Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.324-330
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• 1999

$Si_3N_4$-$TiB_2$ with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ additives was hot pressed in a flowing $N_2$ environment with varying $TiB_2$ content from 10 to 50 vol%. Variations of mechanical (hardness, fracture toughness, and flexual strength), and tribological properties as a function of $TiB_2$ content were investigated. As the content of $TiB_2$ increased, relative density decreased due to the chemical reaction of $TiB_2$in $N_2$ environment. The reduction of density causes mechanical properties to be degraded with an increase of $TiB_2$ in $Si_3N_4$. Tribological properties were dependent of microstructure as well as mechanical properties, however, they were degraded strongly by the chemical reaction of $Si_3N_4$-$TiB_2$ during hot pressing in $N_2$ environment. SEM and TEM observations, and X-ray diffraction analysis that the chemical reaction products at the interface are TiCN, Si, and $SiO_2$. Also, the comparison of XRD patterns of the $Si_3N_4$-40 vol% $TiB_2$ composites hot pressed at $1,750^{\circ}C$ for 1 hour between in $N_2$ and in Ar gas was made. The XRD peaks of Si and $SiO_2$ were not found in Ar, but still a weak peak of TiCN was presented.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.444-449
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• 2010

Transparent ceramics are used in new technology because of their excellent mechanical properties over glasses. Transparent ceramics are nowadays widely used in armor, laser windows, and in high temperature applications. Silicon nitride ceramics have excellent mechanical properties and if transparent silicon nitride is fabricated, it can be widely used. h-BN has a lubricating property and is ductile. Therefore, adding h-BN to silicon nitride ceramics gives a lubricating property and is also machinable. Translucent silicon nitride was fabricated by hot-press sintering (HPS) and 57% transmittance was observed in the near infrared region. A higher wt. % of h-BN in silicon nitride ceramics does not favor transparency. The optical, mechanical, and tribological properties of BN dispersed polycrystalline $Si_3N_4$ ceramics were affected by the density, ${\alpha}:{\beta}$-phase ratio, and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of $\alpha-Si_3N_4$, AlN, MgO, and h-BN at $1850^{\circ}C$. The composite contained from 0.25 to 2 wt. % BN powder with sintering aids (9% AlN + 3% MgO). A maximum transmittance of 57% was achieved for the 0.25 wt. % BN doped $Si_3N_4$ ceramics. Fracture toughness increased and wear volume and the friction coefficient decreased with an increase in BN content. The properties such as transmittance, density, hardness, and flexural strength decreased with an increase in content of h-BN in silicon nitride ceramics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.