• 제목/요약/키워드: SiC-BN

검색결과 43건 처리시간 0.02초

Microstructure and Mechanical Properties of SiC-BN Composites with Oxynitride Glass

  • Lee, Young-Il;Kim, Young-Wook
    • 한국세라믹학회지
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    • 제40권3호
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    • pp.229-233
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    • 2003
  • By using an oxynitride glass as a sintering additive, the effects of BN content on microstructure and mechanical properties of the hot-pressed and subsequently annealed SiC-BN composites were investigated. The microstructures developed were analyzed by image analysis. The morphology of SiC grains was strongly dependent on BN content in the starting composition. The aspect ratio of SiC decreases with increasing BN content and the average diameter of SiC shows a maximum at 5 wt% BN and decreases with increasing BN content in the starting powder. The fracture toughness increased with increasing BN content while the strength decreased with increasing BN content. The strength and fracture toughness of SiC or SiC-TiC composites were strongly dependent on the morphology of SiC grains, but the strength and fracture toughness of SiC-BN composites were strongly dependent on BN content rather than morphology of SiC grains. These results suggest that fracture toughness of SiC ceramics can be tailored by manipulating BN content in the starting composition. Typical fracture toughness and strength of SiC-10 wt% BN composites were 8 MPa$.$m$\^$1/2/ and 445 MPa, respectively.

Application and evaluation of boron nitride-assisted liquid silicon infiltration for preparing Cf/SiC composites

  • Kim, Jin-Hoon;Jeong, Eui-Gyung;Kim, Se-Young;Lee, Young-Seak
    • Carbon letters
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    • 제12권2호
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    • pp.116-119
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    • 2011
  • C/SiC composites were prepared by boron nitride (BN)-assisted liquid silicon infiltration (LSI), and their anti-oxidation and mechanical properties were investigated. The microstructures, bulk densities, and porosities of the C/SiC composites demonstrated that the infiltration of liquid silicon into the composites improved them, because the layered-structure BN worked as a lubricant. Increasing the amount of BN improved the anti-oxidation of the prepared C/SiC composites. This synergistic effect was induced by the assistance of BN in the LSI. More thermally stable SiC was formed in the composite, and fewer pores were formed in the composite, which reduced inward oxygen diffusion. The mechanical strength of the composite increased up to the addition of 3% BN and decreased thereafter due to increased brittleness from the presence of more SiC in the composite. Based on the anti-oxidation and mechanical properties of the prepared composites, we concluded that improved anti-oxidation of C/SiC composites can be achieved through BN-assisted LSI, although there may be some degradation of the mechanical properties. The desired anti-oxidation and mechanical properties of the composite can be achieved by optimizing the BN-assisted LSI conditions.

실리콘 용탕으로부터 직접 제조된 태양광용 다결정 실리콘의 SiC 오염 연구 (SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications)

  • 이예능;장보윤;이진석;김준수;안영수;윤우영
    • 한국주조공학회지
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    • 제33권2호
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    • pp.69-74
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    • 2013
  • Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

RF UBM Sputtering에 의해 증착된 hBN 박막의 미세구조가 cBN 상의 핵형성에 미치는 영향 (Effect of Microstructure of hBN Thin Films on the Nucleation of cBN Phase Deposited by RF UBM Sputtering System)

  • 이은옥;박종극;임대순;백영준
    • 한국진공학회지
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    • 제13권4호
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    • pp.150-156
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    • 2004
  • Si(100) 기판 위에 RF UBM 스퍼터링 (Unbalanced Magnetron Sputtering) 방법을 이용하여 BN 박막을 증착하였다. 이온 충돌 에너지에 영향을 주는 증착 압력과 기판 바이어스 전압을 변화시켜, 증착된 BN박막의 미세구조와 압축응력의 변화를 살펴보았다. 높은 증착 압력에서는 hBN laminate의 정렬도가 기판 바이어스 전압이 증가함에 따라 선형적으로 증가한 반면, 낮은 증착 압력에서는 낮은 기판 바이어스 전압에서 hBN laminate의 정렬도가 높게 나타났다. hBN 박막의 응력 변화와 표면 형상은 hBN laminate의 정렬도와 밀접한 관계가 있는 것으로 관찰되었는데, 이의 적절한 조절에 의해 압축응력의 증가 없이도 hBN 박막 위에 cBN 상의 핵 형성이 일어날 수 있었다.

압입접촉하중이 작용하는 섬유강화 복합재료의 응력해석 (Stress Analysis for Fiber Reinforced Composites under Indentation Contact Loading)

  • 장경순;김태우;김철;우상국;이기성
    • 한국세라믹학회지
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    • 제45권4호
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    • pp.238-244
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    • 2008
  • Modeling and FEM analysis on Boron Nitride and/or Pyrolytic Carbon coating layers on SiC fibers under indentation contact loadings are investigated. Especially this study attempts to model the mechanical behavior of the SiC fibers with and without coatings. Tyranno S grade and Tyranno LoxM grade of SiC are selected for fiber and Boron Nitride and/or Pyrolytic Carbon as coating material. The modeling is performed by SiC fiber without coating layer, which includs single(BN or PyC) and double(BN-PyC or PyC-BN) coating layer. And then the analysis is performed by changing a type of coating layer, a type of fiber and coating sequence. In this study, the concepts of modeling and analysis techniques for optimum design of BN and PyC coating process on SiC fiber are shown. Results show that stresses are reduced when indentation contact loading applies on the material having lower elastic modulus.

RF 스퍼터링법에 의한 BN박막 증착시 기판 바이어스전압의 영향에 관한 연구 (The Effect of Substrate Bias Voltage during the Formation of BN film by R. F. Sputtering Method)

  • 이은국;김도훈
    • 한국표면공학회지
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    • 제29권2호
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    • pp.93-99
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    • 1996
  • In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

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질화규소의 미세조직과 기계적 성질에 미치는 h-BN 첨가의 영향 (Effect of h-BN Content on Microstructure and Mechanical Properties of Si3N4)

  • 김승현;이영환;조원승;김준규;조명우;이은상;이재형
    • 한국세라믹학회지
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    • 제40권9호
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    • pp.867-873
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    • 2003
  • $Si_{3}N_{4}$-BN계 기계 가공서 세라믹스를 $1800^{\circ}C$에서 2시간동안 25MPa의 압력하에서 열간 가압소결하여 제조하였다. $Si_{3}N_{4}$ 매트릭스에 판상의 h-BN 첨가량을 5-30 vol%까지 증가함에 따라 굽힘강도는 $Si_{3}N_{4}$ 단미의 1000 MPa에서 720~400 MPa로 감소하였고, 파괴인성도 $Si_{3}N_{4}$ 단미의 7.6MPaㆍ$m^{1/2}$에서 6.5~4.1 MPaㆍ$m^{1/2}$로 감소하였다. $\beta$-$Si_{3}N_{4}$의 결정립 크기와 형상비는 h-BN 첨가에 의해 약간 감소하였다. $Si_{3}N_{4}$ 단미는 절삭시 취성 파괴를 나타내어 절삭이 불가능하였으나, $Si_{3}N_{4}$-BN계 기계 가공서 세라믹스는 파괴가 발생하지 않으면서 절삭이 가능하여, 우수한 기계 가공성을 나타내었다. h-BN 함량이 증가할수록 절삭과 마이크로 드릴링시의 절삭력은 감소하였다.

Boron Nitride Films Grown by Low Energy Ion Beam Assisted Deposition

  • Park, Young-Joon;Baik, Young-Joon;Lee, Jeong-Yong
    • The Korean Journal of Ceramics
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    • 제6권2호
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    • pp.129-133
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    • 2000
  • Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

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습식법으로 제조된 BN 중간층을 가진 Cf/SiC 복합재의 제조 및 물성 평가 (Fabrication and Characterization of Cf/SiC Composite with BN Interphase Coated by Wet Chemical Process)

  • 구준모;김경호;한윤수
    • 한국표면공학회지
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    • 제50권6호
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    • pp.523-530
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    • 2017
  • In this study, we developed the h-BN interphase for ceramic matrix composites (CMCs) through a wet chemical coating method, which has excellent price competitiveness and is a simple process as a departure from the existing high cost chemical vapor deposition method. The optimum condition for nitriding an h-BN interphase using boric acid and urea as precursors were derived, and the h-BN interphase coating through a wet method on a carbon preform of 2.5 D was conducted to apply the optimum conditions to the CMCs. In order to control the coating property via the wet coating method, four parameters were investigated such as dipping time of the specimen in the precursor solution, the ratio of boric acid and urea in the precursor, the concentration of solution where the precursor was dissolved, and the cycle of dipping and dry process. The CMCs was fabricated through polymer impregnation and pyrolysis (PIP) processes and a three-point flexural strength test was conducted to verify the role of the coated h-BN interphase.

hBN의 첨가량에 따른 Si3N4/hBN 세라믹의 재료특성 및 마이크로 홀가공 유용성 평가 (Feasibility Evaluation of Micro Hole Drilling and the Material Properties of Si3N4/hBN Ceramic with hBN Contents)

  • 박귀득;고건호;이동진;김진형;강명창
    • 한국기계가공학회지
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    • 제16권1호
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    • pp.36-41
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    • 2017
  • In this paper, $Si_3N_4/hBN$ ceramics with various hexagonal boron nitride (hBN) contents (0, 10, 20, or 30 wt%) were fabricated via spark plasma sintering (SPS) at $1500^{\circ}C$, 50MPa, and 10m holding time. The material properties such as the relative density, hardness, and fracture toughness were systematically evaluated according to the hBN content in the $Si_3N_4/hBN$ ceramics. The results show that relative density, hardness, and fracture toughness continuously decreased as the hBN content increased. In addition, peak-step drilling (with tool diameter $500{\mu}m$) was performed to observe the effects of hBN content in micro-hole shape and cutting force. A machined hole diameter of $510{\mu}m$ (entrance) and stable cutting force were obtained at 30 wt% hBN content. Consequently, $Si_3N_4/30wt%$ hBN ceramic is a feasible material upon which to apply semi-conductor components, and this study is very meaningful for determining correlations between material properties and machining performance.